Superconducting nanowire single photon detector (SNSPD) is a leading candidate for applications requiring the fundamental limit of light detection at high detection rates. While SNSPD technology employing nanowires from conventional low temperature superconducting detectors is mature with several commercial solutions, other material options with higher transition temperature approaching liquid nitrogen with faster signal responses are actively being explored. In this context, we develop a comprehensive model that predicts the final potential response from an SNSPD incorporating several physical and material aspects. A phase diagram of photon detection is developed that describes the latching phases and the photon sensitivity as a function of biasing current and temperature for both low temperature and high temperature superconductors. On the one hand, while low temperature superconductors are observed to be more sensitive than high temperature superconductors (HTSs) under any given biasing condition, a biasing window for a single photon detection with HTS nanowires is identified. On the other hand, HTS nanowires demonstrate three orders of magnitude faster response times than the low temperature superconductor nanowire at the same biasing condition, making it uniquely suited for several practical applications.
Superconducting nanowire single photon detector (SNSPD) is a leading candidate for applications requiring the fundamental limit of light detection at high detection rates. While SNSPD technology employing nanowires from conventional low temperature superconducting detectors is mature with several commercial solutions, other material options with higher transition temperature approaching liquid nitrogen with faster signal responses are actively being explored. In this context, we develop a comprehensive model that predicts the final potential response from an SNSPD incorporating several physical and material aspects. A phase diagram of photon detection is developed that describes the latching phases and the photon sensitivity as a function of biasing current and temperature for both low temperature and high temperature superconductors. On the one hand, while low temperature superconductors are observed to be more sensitive than high temperature superconductors (HTSs) under any given biasing condition, a biasing window for a single photon detection with HTS nanowires is identified. On the other hand, HTS nanowires demonstrate three orders of magnitude faster response times than the low temperature superconductor nanowire at the same biasing condition, making it uniquely suited for several practical applications.
The superconducting nanowire single photon detector (SNSPD) is currently one of the best detectors with comprehensive performance in the mid-infrared wavelength, which has been widely used in quantum optics, LiDAR, and biological fluorescence detection. To develop new devices with excellent performance, the photon detection mechanism of SNSPD still needs further research. Here we find that the single quantum phase slip is the dominating mechanism leading to dark-count and photon-response events in SNSPD below the quantum temperature. We fabricate the nanowire with a length of 7.5 μm and a width of 25 nm using niobium nitride film with a thickness of 5 nm. The distribution of the superconducting switching current is measured as a function of temperature at temperatures ranging from 0.3 to 7 K. We observe single quantum phase slips in the nanowire at the temperature below 1.2 K, and we further investigate the quantitative relationship between the single quantum phase slip rate and the superconducting switching rate of the nanowire under the laser illumination. Experimental results show that the single quantum phase slip is a significant factor leading to photon response and dark counts in the nanowire below the quantum temperature. Our research helps to further reveal the photon detection mechanism of the SNSPD, laying a theoretical foundation for the development of high-performance SNSPD.
Superconducting nanowire single photon detector (SNSPD) is an optical detector with quantum-limit sensitivity. The detection mechanism is based on the Cooper-pair breaking by the photon energy, which results in a phase transition from superconducting state to non-superconducting state. SNSPDs surpass the semiconducting counterparts with high detection efficiency, low dark count rate, small timing jitter, short dead time, broad spectrum sensitivity as well as free-running etc. SNSPDs with high performance have been applied in various fields, such as, quantum information, laser communication, light detection and ranging. The progress of SNSPD research and development, application as well as commercialization at home and abroad in the past few years was summarized. An outlook of SNSPDs' RD as well as applications was also provided.
Superconducting Nanowire Single Photon Detectors (SNSPDs) excel at a wide variety of performance criteria for single photon counting. They combine unprecedented high detection efficiency, high timing resolution, high count rates, low intrinsic dark count rates, and are sensitive to ultraviolet through mid-infrared single-photons. At JPL, we are working on several projects to push the performance limits of SNSPDs to achieve higher maximum count rates, larger active areas, higher timing resolution, and a wider spectral range. Our recent advances enable new applications for dark matter detection, imaging, and space-to-ground communication and provide insight into the fundamental physics of single-photon detection in superconducting nanowires.
There is increasing interest in using superconducting optical photon detectors in a variety of applications. These applications require detectors that have extremely low dark count rates, high count rates, and high quantum efficiency. I will describe our work on two types of superconducting detectors, the Superconducting Nanowire Single Photon Detector (SNSPD or nSSPD) and superconducting Transition-Edge Sensor (TES). An SNSPD is an ultra-thin, ultra-narrow (nm scale) superconducting meander that is current biased just below its critical current density. When one or more photon is absorbed, a hot spot is formed that causes the superconductor to develop a resistance and consequently a voltage pulse. At NIST and JPL, we have been developing nanowire detectors using an amorphous alloy of tungsten-silicide. An example of this detector is shown in Fig 1(a). In this case, there are two tungsten silicide layers separated by a dielectric layer to optimize detection of light for any polarization[1]. Fig 1(b) is an example of a TES detector with gold cooling fins to enhance timing of the detector[2]. By exploiting the sharp superconducting-to-normal resistive transition of tungsten at 100mK, TES detectors give an output signal that is proportional to the cumulative energy in an absorption event. This proportional pulse-height enables the determination of the energy absorbed by the TES and the direct conversion of sensor pulse-height into photon number. I will discuss our progress towards developing both types of detectors with quantum efficiencies approaching 100%.
Superconducting Nanowire Single-Photon Detectors (SNSPDs) are the premier single-photon counting technology in the near-infrared regime. Operating via a photon-induced phase transition from the superconducting to the normal state, SNSPDs act as highly sensitive digital detectors that now play a critical role in quantum communication, deep-space optical communications, and direct dark matter detection. As the demand for these detectors scales, there is a pressing need to extend their performance capabilities toward longer wavelengths, larger active areas, and higher operating temperatures. However, advancing these metrics requires navigating complex physical trade-offs inherent to the detection mechanism. This thesis explores the material optimizations, novel detector architectures, and fundamental device physics required to push SNSPD technology beyond its current limits. The first thrust of this work focuses on extending SNSPD sensitivity into the mid-infrared (MIR) and far-infrared regimes. By developing a low-Tc (sub-1 K) WSi film engineered to reduce the characteristic detection energy, the threshold for long-wavelength detection is significantly lowered. Coupled with a novel detector architecture utilizing impedance-matching tapers and superconducting nanowire avalanche photon detectors (SNAPs), sensitivity is initially demonstrated at wavelengths up to 29um using a blackbody thermal source. Expanding beyond this limit, the implementation of quantum cascade lasers enables the demonstration of single-photon counting at wavelengths up to 88um, marking a major improvement over the current state of the art. To address the practical MIR detection challenges of low signal-to-noise ratio and restricted fill factors, this work also demonstrates a 1 mm x 1mm array of superconducting microwire single-photon detectors (SMSPDs) sensitive out to 3.7um, establishing a pathway for future antenna-coupled detectors. The second thrust investigates the development of micrometer-scale wires to simultaneously increase active area and operating temperature. Moving to microwire geometries raises fundamental questions regarding intrinsic detection mechanisms. Using a scanning lens setup, this work demonstrates the first direct observation of transverse coordinate effects in microwires, where the precise location of photon incidence across the wire width significantly alters the detector's slew rate and timing performance. To counteract this, new rectification schemes are introduced to produce a more uniform detection landscape. Specifically, the integration of a superconducting rail alongside the main detector is shown to successfully mitigate the transverse coordinate effect, improve timing performance, and increase the viable operating temperature of the detector. The third thrust explores the use of unconventional superconductors, namely MgB2 to achieve an appreciably higher-temperature single-photon detection pathway. This section details the distinct challenges associated with the growth and fabrication of detectors using air-sensitive materials and evaluates their long-term viability for the SNSPD platform. Ultimately, this thesis highlights the critical material and architectural parameters required to advance the field of single-photon detection. By elucidating the metrics and mechanisms that govern ideal detector performance, this work aims to broaden the understanding and future application of SNSPDs across diverse scientific disciplines. All the data presented here is my own unless otherwise mentioned.
Superconducting devices offer the potential to perform at speeds and detection efficiencies higher than what is possible using conventional technologies (such as semiconducting avalanche photodiodes and photomultiplier tubs) for wavelengths from the ultraviolet to the mid-infrared. As a result, there has been increasing interest in using superconducting optical photon detectors in a variety of applications. There has been significant progress in using these types of detectors in areas of basic research such as quantum information science and quantum optics. These applications require detectors that have extremely low dark count rates, high count rates, and high quantum efficiency. I will begin by describing some of our earlier work on superconducting Transition-Edge Sensor (TES). In particular, I will describe some of the engineering involved in the cryogenic, electrical, and optical packaging so that these devices can be easily coupled into fiber-based optics. I will also describe our recent work on developing superconducting nanowire single photon detectors (SNSPD or SSPD). An SNSPD is an ultra-thin, ultra-narrow (nm scale) superconducting meander that is current biased just below its critical current density. When one or more photon is absorbed, a hot spot is formed that causes the superconductor to develop a resistance and consequently a voltage pulse. At NIST and JPL, we have been developing nanowire detectors using an amorphous alloy of tungsten-silicide. We will describe to construct systems using tungsten-silicide nanowires to achieve high detection efficiency (>90% at 1550nm). I will also describe our work to improve the performance of the device by fabricating multiple nanowires in an electrically parallel structure to implement a superconducting nanowire avalanche photodiode (SNAP)[1]. One example of this type of detector is shown in Fig 1. In this case, there are two tungsten silicide layers separated by a dielectric layer to optimize detection of light for any polarization[2]. In addition, progress on other types of SNAP detectors will be described to increase the signal size from a single photon, reduce the recovery time of the device, and to improve the jitter.