This paper examines how the thickness of Microwave Kinetic Inductance Detectors (MKIDs) films affects their sensitivity. We fabricated MKIDs with different film thicknesses on monocrystalline silicon substrates and investigated their response rate, noise, and sensitivity at 100 mK. Our results indicate that changes in film thickness do not impact the noise spectrum, but they do lead to a decrease in the responsivity of the MKID. Ultimately, this decrease in responsivity results in a reduction in the sensitivity of the MKIDs.
This paper examines how the thickness of Microwave Kinetic Inductance Detectors (MKIDs) films affects their sensitivity. We fabricated MKIDs with different film thicknesses on monocrystalline silicon substrates and investigated their response rate, noise, and sensitivity at 100 mK. Our results indicate that changes in film thickness do not impact the noise spectrum, but they do lead to a decrease in the responsivity of the MKID. Ultimately, this decrease in responsivity results in a reduction in the sensitivity of the MKIDs.
Microwave kinetic inductance detectors (MKID) are superconducting broadband direct detectors. If a superconducting thin film patterned into a resonator is illuminated with photons, Cooper pairs break up and the kinetic inductance of the film changes. This shifts the resonance frequency downwards and the dissipation of the resonator increases, which can be detected in the phase and amplitude of a transmitted signal. \n \nIn this thesis, a waveguide coupled MKID is designed and simulated. 350 GHz radiation is coupled into a copper waveguide via a horn antenna. A waveguide probe leads the signal onto a 9 µm silicon membrane where it is absorbed in a 40 nm superconducting aluminum film which is the inductive part of a superconducting resonator. The capacitor of the resonator is made of niobium. Two versions of the device are developed, a transmission line resonator and a lumped element resonator design. The new design will enable an accurate understanding of the optical sensitivity of MKIDs and allow comparison of different resonator materials. Since two different resonator types are used, the direct comparison of transmission line and lumped resonators will also be possible. \n \nA measurement setup is developed including an ADR cryostat to cool MKID devices down to below 40 mK. An analog readout system using either a vector network analyzer or an IQ mixer is designed and built. The necessary software to control the ADR, the temperature monitoring, the readout signal generation and detection and the signal acquisition of the setup is also developed. \n \nThe waveguide coupled MKID design is fabricated in our in-house microfabrication laboratory and measured in the new setup. In my measurements, the devices do not show a resonance feature. The VNA and DC measurements are analyzed to determine a plausible hypothesis of the failure. The devices are diagnosed for critical issues during fabrication which will be addressed in a future iteration. \n \nTo verify the measurement setup, a test device of the IRAM NIKA 2 MKID camera is measured and the complete analysis pipeline is exercised. The quasi-particle lifetime in the aluminum thin films is measured and a dark and optical noise equivalent power are determined. The results are within the uncertainty comparable to measurements of IRAM themselves. \n \nA test chip designed in my master thesis that contains eight NbTiN resonators is measured in the new setup and non-linear effects under strong readout power are studied. Parametric amplification and oscillation of a resonator are shown qualitatively.
We design and fabricate a 350GHz 8×8 Al Microwave Kinetic Inductance Detector (MKIDs) array for the demonstration of its characteristics, mainly focus on the quasiparticle lifetime of the resonators. The quasiparticle lifetime data is collected by measuring a resonator’s phase response to a LED pulse at resonant frequency in a dilution refrigerator cooled to mK stage. We also measure and discuss the influence of various parameters on the change of quasiparticle lifetime, including different LED voltage supply, bath temperature of the MKIDs, and superconducting film thickness.
Microwave Kinetic Inductance Detectors (MKIDs), just like a planar resonance cavity resonating at a microwave frequency, are emerging as a kind of high-sensitivity detector suitable for large format arrays at terahertz (THz) wavelengths. There are two types of MKIDs, namely distributed (or antenna-coupled) MKIDs and lumped-element MKIDs (aka LeKIDs). Various superconducting thin films (such as Al, TiN, NbTiN, NbN, and Nb) have been investigated for MKIDs. They do work so long as the detected photon energy exceeds their energy gap, but their response and noise behaviors are yet to be fully understood. Here we report on the design, fabrication, and characterization of distributed and lumped-element MKIDs made of NbTiN superconducting film. Detailed simulation and measurement results will be presented.
Abstract A microwave kinetic inductance detector (MKID) is a cutting-edge superconducting detector. It comprises a resonator circuit constructed with a superconducting film on a dielectric substrate. To expand its field of application, it is important to establish a method to suppress the two-level system (TLS) noise that is caused by the electric fluctuations between the two energy states at the surface of the substrate. The electric field density can be decreased by expanding the strip width (S) and gap width from the ground plane (W) in the MKID circuit, allowing the suppression of TLS noise. However, this effect has not yet been confirmed for MKIDs made with niobium films on silicon substrates. In this study, we demonstrate its effectiveness for such MKIDs. We expanded the dimension of the circuit from (S, W) = (3.00 μm, 4.00 μm) to (S, W) = (5.00 μm, 23.7 μm), and achieved an increased suppression of 5.5 dB in TLS noise.
The separation and optimization of noise components is critical to microwave-kinetic inductance detector (MKID) development. We analyze the effect of several changes to the lumped-element inductor and interdigitated capacitor geometry on the noise performance of a series of MKIDs intended for millimeter-wavelength experiments. We extract the contributions from two-level system noise in the dielectric layer, the generation-recombination noise intrinsic to the superconducting thin-film, and system white noise from each detector noise power spectrum and characterize how these noise components depend on detector geometry, material, and measurement conditions such as driving power and temperature. We observe a reduction in the amplitude of two-level system noise with both an elevated sample temperature and an increased gap between the fingers within the interdigitated capacitors for both aluminum and niobium detectors. We also verify the expected reduction of the generation-recombination noise and associated quasiparticle lifetime with reduced inductor volume. This study also iterates over different materials, including aluminum, niobium, and aluminum manganese, and compares the results with an underlying physical model.
On the Efficiency η and the Homogeneity of TiN Kinetic Inductance Detectors Produced through Atomic Layer Deposition
Microwave Kinetic Inductance Detectors (MKIDs) belong to non-equilibrium superconducting devices. It is a new promising device due to high quantum efficiency, low theoretical noise limit, multiplex frequency domain, photon-number-resolving, and energy resolving. In the case of MKIDs, a change in the kinetic inductance is produced by the breaking of Cooper pairs, modifying the electrodynamic response of the superconductor. The production process of an MKID consists of depositing a superconducting thin film on an insulating substrate and applying standard lithographic patterning techniques to produce a resonator structure. When an MKID is produced via sputtering, film nonuniformity is observed, producing instability, low yield, frequency collisions, and low energy resolution. We exploring film uniformity in films produced with Atomic Layer Deposition (ALD) and through ALD archive high values in the energy resolution. The uniformity of ALD is evaluated via measurement of the critical temperature of 4 MKIDs. Two MKIDs belong to the first fabrication process and the other two to another. The results obtained are: ΔTc/max(σT1,σT2) is 0.45 for A1-B1 and 0.21 for A2-B2. The difference in the Tc for MKIDs of the same wafer is around 5.1 mK and from different wafers, the maximum difference is 66 mk with a minimum of 48 mK. However, with the high uniformity archived, we obtained a poor response of the MKIDs when a photon is absorbed. As a consequence of the low response, we examined in the literature about the process of photon absorption. In this evaluation, we were focusing on the down-conversion efficiency as a possible cause for the degraded energy resolution. In this process, one part of the initial energy of the photon is lost, transferred to the creation of quasiparticles and phonons. The phonons that do not possess enough energy to break a Cooper pair are lost from the system. This loss in energy is accounted for by the eff iciency η which has a constant value reported as 0.57 (! from simulation). Due to the efficiency had been reported always as constant. We proceed to evaluate its value through a new method. The process consists of measuring the gain of the system via the photon transfer curve and thermal calibration. The efficiency obtained with this new method is of 0.008 which has a lower value in comparison with the simulation. The methods to obtain the critical temperature, as well as the new method to evaluate the efficiency of an MKID will be shown in this work.