A cost‐effective approach to provide diamond platelets containing nitrogen vacancy center ensembles (NVs) in the range of ppm is investigated. Industry‐type high‐pressure–high‐temperature‐diamond type 1b containing a high number of interstitial nitrogen in the range of several tens of ppm are used and small diamond platelets (size ≈1 × 1 mm2, thickness ≈300 μm) are prepared by laser cutting and polishing. The nitrogen is converted into NV by means of high‐energy electron irradiation of 10 MeV and annealing at 900 °C. Variations in the irradiation dose between 0.5E18 1/cm2 and 2E18 1/cm2 result in different densities of NV. The diamond platelets are analyzed with regard to their nitrogen concentration and photoluminescence as well as optically detected magnetic resonance is used to investigate the usability for a NV‐based magnetometer. A method to calculate the ratio of negatively to neutrally charged NV (NV−/NV0) is proposed that uses the photoluminescence intensities of the spectrum at 575 and 638 nm, namely, the zero‐phonon lines of NV− and NV0.
A cost‐effective approach to provide diamond platelets containing nitrogen vacancy center ensembles (NVs) in the range of ppm is investigated. Industry‐type high‐pressure–high‐temperature‐diamond type 1b containing a high number of interstitial nitrogen in the range of several tens of ppm are used and small diamond platelets (size ≈1 × 1 mm2, thickness ≈300 μm) are prepared by laser cutting and polishing. The nitrogen is converted into NV by means of high‐energy electron irradiation of 10 MeV and annealing at 900 °C. Variations in the irradiation dose between 0.5E18 1/cm2 and 2E18 1/cm2 result in different densities of NV. The diamond platelets are analyzed with regard to their nitrogen concentration and photoluminescence as well as optically detected magnetic resonance is used to investigate the usability for a NV‐based magnetometer. A method to calculate the ratio of negatively to neutrally charged NV (NV−/NV0) is proposed that uses the photoluminescence intensities of the spectrum at 575 and 638 nm, namely, the zero‐phonon lines of NV− and NV0.
Ensembles of nitrogen-vacancy (NV) centers in diamond are versatile quantum sensors with broad applications in the physical and life sciences. The concentration of neutral substitutional nitrogen ( [ N s 0 ]) strongly influences NV electronic spin coherence times, sensitivity, and optimal sensing strategies. Diamonds with [ N s 0 ] ∼ 1–10 ppm are a focus of recent material engineering efforts, with higher concentrations being favorable for continuous-wave optically detected magnetic resonance (CW-ODMR) and lower concentrations expected to benefit pulsed magnetometry techniques through extended NV spin coherence times and improved sensing duty cycles. In this work, we synthesize and characterize low- [ N s 0 ] ( ∼ 0.8 ppm), NV-enriched diamond material, engineered through low-strain chemical vapor deposition (CVD) growth on high-quality substrates, 12 C isotopic purification, and controlled electron irradiation and annealing. Our results demonstrate good strain homogeneity in diamonds grown on CVD substrates and spin-bath-limited NV dephasing times. By measuring NV spin and charge properties across a wide range of optical NV excitation intensity, we provide direct comparisons of photon-shot-noise-limited magnetic field sensitivity between the current low- [ N s 0 ] and previously studied higher- [ N s 0 ] ( ∼ 14 ppm) NV-diamond sensors. We show that low- [ N s 0 ] diamond can outperform higher- [ N s 0 ] diamond at moderate and low optical NV excitation intensity. Our results provide practical benchmarks and guidance for selecting NV-diamond sensors tailored to specific experimental constraints and sensing requirements.
Nitrogen-vacancy (NV) centers in single-crystal CVD diamond are promising candidates for quantum sensing due to their remarkable optical and spin properties [1]. These defects exhibit stable photoluminescence (PL), long spin coherence times, and high sensitivity to external fields [2]. In this study, we present a room-temperature PL characterization of NV centers excited with a 532 nm laser. The setup was optimized for high signal-to-noise ratio and spectral resolution. Key parameters analyzed include emission intensity, zero-phonon line (ZPL) at ~637 nm, phonon sidebands, and the charge state distribution between NV⁰ and NV⁻. The NV⁻ state, crucial for spin-based sensing, is evaluated to understand its stability under different nitrogen doping conditions [3]. The relative intensities of NV⁰ and NV⁻ provide insights into nitrogen incorporation and vacancy formation. These results contribute to optimizing synthesis conditions for enhanced NV⁻ concentration, supporting the advancement of diamond-based quantum sensing technologies.
To improve the sensitivity of magnetic sensors using negatively charged nitrogen-vacancy (NV−) centers, it is essential to improve the quality of diamond crystals and precisely control the nitrogen concentration in the crystals. We have utilized high-pressure, high-temperature synthesis [1] and chemical vapor deposition [2] for the growth of nitrogen-doped diamond. The concentration of substitutional nitrogen in the neutral charge state [NS0] were evaluated by electron paramagnetic resonance (EPR) measurements. As shown in Fig. 1, [NS0] were precisely controlled by the weight ratio of nitrogen getter material in the metal solvent for the HPHT method (Fig. 1(a)) and by the carbon to nitrogen gas ratio for the CVD method (Fig. 1(b)). Then, the diamond crystals were irradiated with electron beams followed by vacuum annealing so that 10% of the nitrogen at the substitutional site became NV− centers, and the negatively charged NV− centers were successfully formed preferentially [3]. T2 of these diamond crystals was inversely proportional to the nitrogen concentration. The product of T2 and nitrogen concentration of the obtained HPHT diamond crystal is slightly higher than the maximum value reported so far [4], suggesting that the crystal is expected to have high magnetic sensitivity.
The nitrogen‐vacancy color center in diamond is one of the important systems in the fast‐growing field of sensing. This color center is used in both high‐resolution and high‐sensitivity sensors. However, techniques for the quick and efficient formation of NV centers are still in the development stage. Herein, a study on the influence of the electron irradiation dose on the conversion of substitutional nitrogen into NV− centers is presented. The study is done on diamonds that are highly enriched with nitrogen (≈100 ppm), which, on one hand, should maximize the effect of irradiation, and, on other hand, be of interest for high‐sensitivity magnetometers. The maximum achieved conversion efficiency is as high as 37% ± 3.7%, with no observed saturation on the electron dose even with the simplest annealing procedure. The measurements of the corresponding dephasing time made it possible to make a theoretical estimate for the shot‐noise‐limited magnetic field sensitivity per unit volume of diamond to be roughly .
Nitrogen-vacancy (NV) centers in diamond photonic nanostructures have attracted much attention as efficient single photon emitters and quantum bits. These quantum optical devices mostly require single or low-density NV centers doped in thin diamond membranes. In contrast, this study focuses on diamond photonic nanostructures with a high concentration of NV centers to achieve a diamond color center laser with a sufficient gain available as a visible light source and a sensitive magnetic-field sensor. We employ high-dose helium ion implantation to type-Ib diamond substrates and thermal annealing, which enables us to obtain uniform thin diamond membranes containing a dense ensemble of NV centers. Luminescence spectroscopy reveals the kinetics of NV centers at high temperature from which we find an optimum annealing temperature maximizing the NV center emission while suppressing the transformation from NV to H3 centers. Furthermore, fine photonic nanowires are also successfully fabricated in the air-suspended diamond membrane, and they exhibit intense photoluminescence from the NV centers with a concentration as high as 7 × 1016 cm−3 (0.4 ppm). These results suggest a route to the fabrication of diamond photonic nanostructures containing a dense ensemble of NV centers, which can be a key material for developing diamond-based light emitting and magnetic-field sensing devices.
Abstract Negatively charged nitrogen-vacancy (NV − ) center ensembles in diamond have proved to have great potential for use in highly sensitive, small-package solid-state quantum sensors. One way to improve sensitivity is to produce a high-density NV − center ensemble on a large scale with a long coherence lifetime. In this work, the NV − center ensemble is prepared in type-Ib diamond using high energy electron irradiation and annealing, and the transverse relaxation time of the ensemble— T 2 —was systematically investigated as a function of the irradiation electron dose and annealing time. Dynamical decoupling sequences were used to characterize T 2 . To overcome the problem of low signal-to-noise ratio in T 2 measurement, a coupled strip lines waveguide was used to synchronously manipulate NV − centers along three directions to improve fluorescence signal contrast. Finally, NV − center ensembles with a high concentration of roughly 10 15 mm −3 were manipulated within a ~10 µ s coherence time. By applying a multi-coupled strip-lines waveguide to improve the effective volume of the diamond, a sub-femtotesla sensitivity for AC field magnetometry can be achieved. The long-coherence high-density large-scale NV − center ensemble in diamond means that types of room-temperature micro-sized solid-state quantum sensors with ultra-high sensitivity can be further developed in the near future.