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Millimeter, Submillimeter, and Far-Infrared Detectors and Instrumentation for Astronomy XI

Origin of mm-submm loss in deposited dielectrics for superconducting astronomical instrumentation

Bruno T. Buijtendorp, Akira Endo, Willem Jellema, K. Karatsu, Ton van der Linden, Dimitry Lamers, Karwan Rostem, Edward J. Wollack, J. J. A. Baselmans, Sten Vollebregt, R. Huisman, Martijn Veen

Published Aug 16, 2024• 0 citations
Publisher

Abstract

Deposited dielectrics with low mm-submm loss will be of great benefit to on-chip superconducting circuits for mm-submm astronomy. Compared with planar chip designs, multilayer structures with deposited dielectrics allow for more compact circuit elements, and eliminate radiation losses at high frequencies. While recently hydrogenated amorphous silicon carbide has been demonstrated to exhibit low dielectric losses at mm-submm wavelengths, the origin of the mm-submm loss in hydrogenated amorphous silicon carbide remains unknown. We measured the 270-600 GHz dielectric losses of hydrogenated amorphous silicon carbide in superconducting microstrip lines. Furthermore, we measured the complex dielectric constant of the hydrogenated amorphous silicon carbide in the 3-100 THz range using Fourier transform spectroscopy. We modeled the loss data from 0.27-100 THz using a Maxwell-Helmholtz-Drude dispersion model. Our results demonstrate that phonon modes above 10 THz dominate the mm-submm losses in deposited dielectrics.

DOI
10.1117/12.3020071

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Deposited dielectrics with low mm-submm loss will be of great benefit to on-chip superconducting circuits for mm-submm astronomy. Compared with planar chip designs, multilayer structures with deposited dielectrics allow for more compact circuit elements, and eliminate radiation losses at high frequencies. While recently hydrogenated amorphous silicon carbide has been demonstrated to exhibit low dielectric losses at mm-submm wavelengths, the origin of the mm-submm loss in hydrogenated amorphous silicon carbide remains unknown. We measured the 270-600 GHz dielectric losses of hydrogenated amorphous silicon carbide in superconducting microstrip lines. Furthermore, we measured the complex dielectric constant of the hydrogenated amorphous silicon carbide in the 3-100 THz range using Fourier transform spectroscopy. We modeled the loss data from 0.27-100 THz using a Maxwell-Helmholtz-Drude dispersion model. Our results demonstrate that phonon modes above 10 THz dominate the mm-submm losses in deposited dielectrics.
Low-loss deposited dielectrics will benefit superconducting devices such as integrated superconducting spectrometers, superconducting qubits, and kinetic inductance parametric amplifiers. Compared with planar structures, multilayer structures such as microstrips are more compact and eliminate radiation loss at high frequencies. Multilayer structures are most easily fabricated with deposited dielectrics, which typically exhibit higher dielectric loss than crystalline dielectrics. We measure the subkelvin and low-power microwave and millimeter-submillimeter-wave dielectric loss of hydrogenated amorphous silicon carbide (aaa-SiC:H), using superconducting chips with Nb-Ti-N/a\mathrm{N}/aN/a-SiC:H/Nb-Ti-N microstrip resonators. We deposit the aaa-SiC:H by plasma-enhanced chemical vapor deposition at a substrate temperature of $400{\phantom{\rule{0.1em}{0ex}}}^{\ensuremath{\circ}}\mathrm{C}$. The aaa-SiC:H has a millimeter-submillimeter loss tangent ranging from $0.9\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}4}$ at 270 GHz to $1.5\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}4}$ at 385 GHz. The microwave loss tangent is $3.1\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}5}$. These are the lowest low-power subkelvin loss tangents that have been reported for microstrip resonators at millimeter-submillimeter and microwave frequencies. The aaa-SiC:H films are free of blisters and have low stress: $\ensuremath{-}20$ MPa compressive at 200-nm thickness to 60 MPa tensile at 1000-nm thickness.
We present a lab-on-chip experiment to accurately measure losses of superconducting microstrip lines at microwave and sub-mm wavelengths. The microstrips are fabricated from NbTiN, which is deposited using reactive magnetron sputtering, and amorphous silicon which is deposited using plasma-enhanced chemical vapor deposition (PECVD). Sub-mm wave losses are measured using on-chip Fabry-P{é}rot resonators (FPR) operating around $350\ $GHz. Microwave losses are measured using shunted half-wave resonators with an identical geometry and fabricated on the same chip. We measure a loss tangent of the amorphous silicon at single-photon energies of tan⁡δ=3.7±0.5×10−5\tanδ=3.7\pm0.5\times10^{-5}tanδ=3.7±0.5×10−5 at $6\ $GHz and tan⁡δ=2.1±0.1×10−4\tanδ= 2.1\pm 0.1\times10^{-4}tanδ=2.1±0.1×10−4 at $350\ $GHz. These results represent very low losses for deposited dielectrics, but the sub-mm wave losses are significantly higher than the microwave losses, which cannot be understood using the standard two-level system loss model.
Amorphous hydrogenated silicon (a-Si:H) based lumped elements are one of the promising ways for large-scale integration of superconducting quantum devices. We present a detailed study devoted to the plasma-enhanced chemical vapor deposition process parameters' influence on the structure and morphology of a-Si:H dielectric thin films. We experimentally demonstrate a microcrystalline-to-amorphous growth transition by changing the H2/SiH4 ratio and establish a relationship between the film's structure, thickness, and dielectric loss tangent (tan δ). It is shown that the best dielectric loss tangents of tan δLP = 4.5 × 10−5 (average 9.2 × 10−5) and tan δHP = 1.0 × 10−6 (average 1.2 × 10−6) for superconducting lumped elements with 350 nm-thick amorphous films can be achieved in single- and multi-photon regimes at sub-20 mK, correspondingly. These values are extracted by characterizing superconducting resonators with integrated parallel-plate capacitors (C = 0.2…6.0 pF) for a frequency range from 4.0 to 7.0 GHz. The presented low-loss a-Si:H films can be useful for various superconducting quantum applications, which is illustrated by the fabrication of lumped-element bandpass filters with a well-predicted amplitude–frequency response characteristic.
Two-level systems (TLS) are an important, if not dominant, source of loss and noise for superconducting resonators such as those used in kinetic inductance detectors and some quantum information science platforms. They are similarly important for loss in photolithographically fabricated superconducting mm-wave/THz transmission lines. For both lumped-element and transmission-line structures, native amorphous surface oxide films are typically the sites of such TLS in nonmicrostripline geometries, while loss in the (usually amorphous) dielectric film itself usually dominates in microstriplines. We report here on the demonstration of low TLS loss at GHz frequencies in hydrogenated amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor deposition in superconducting lumped-element resonators using parallel-plate capacitors (PPCs). The values we obtain from two recipes in different deposition machines, $7\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}6}$ and $12\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}6}$, improve on the best achieved in the literature by a factor of 2--4 for a-Si:H and are comparable to recent measurements of amorphous germanium. Moreover, we have taken care to extract the true zero-temperature, low-field loss tangent of these films, accounting for temperature and field saturation effects that can yield misleading results. Such robustly fabricated and characterized films render the use of PPCs with deposited amorphous films a viable architecture for superconducting resonators and they also promise extremely low loss and high quality factor for photolithographically fabricated superconducting mm-wave/THz transmission lines used in planar antennas and resonant filters.
Dielectric loss in low-temperature superconducting integrated circuits can cause lower overall efficiency, particularly in the 90 to 220 GHz regime. We present a method to tune the dielectric loss for silicon oxide deposited by plasma-enhanced chemical-vapor deposition at ambient temperatures. Deposition in an environment with a higher silane-to-oxygen ratio produces silicon oxide films with a lower loss-tangent and a slightly higher optical index of refraction, while contributing no appreciable change in film stress. We measured the dielectric loss by fabricating a series of Nb-SiOx-Nb microstrip resonators in the frequency range of 6 to 9 GHz and comparing their temperature dependence to a model of parasitic two-level-system fluctuators. The dielectric loss-tangent of silicon oxide was improved from 6 ×10-3for stoichiometric silicon dioxide to 2 ×10-3for a more silicon-rich silicon oxide. We present details of the fabrication process and measurements of microstrip resonators.
Mm-wave and THz superconducting circuits find numerous applications in areas ranging from quantum information and sensing to high-energy physics. Planar THz transmission lines and resonators are fabrication-friendly, compact, and scalable, and they can be efficiently interfaced with external signals and controls. However, planar circuits radiate strongly at high frequencies, which precludes their use in loss-sensitive applications. Here, we present the design and characterization of planar dispersion-engineered transmission lines that effectively suppress radiation leakage in desired mm-wave bands. We extend this concept to design planar resonators with extremely low radiation leakage, resulting in radiation Q-factors above 106 at 553 GHz. Low-loss planar THz circuitry will impact many application domains, including broadband communications, quantum information, radio astronomy, and cosmology.