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arXiv:2108.11095

Superconducting Microstrip Losses at Microwave and Sub-millimeter wavelengths

Sebastian Hähnle, Kevin Kouwenhoven, Bruno T. Buijtendorp, Akira Endo, K. Karatsu, David Johannes Thoen, Vignesh Murugesan, J. J. A. Baselmans

Published Aug 25, 2021• 0 citations
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Abstract

We present a lab-on-chip experiment to accurately measure losses of superconducting microstrip lines at microwave and sub-mm wavelengths. The microstrips are fabricated from NbTiN, which is deposited using reactive magnetron sputtering, and amorphous silicon which is deposited using plasma-enhanced chemical vapor deposition (PECVD). Sub-mm wave losses are measured using on-chip Fabry-P{é}rot resonators (FPR) operating around $350\ $GHz. Microwave losses are measured using shunted half-wave resonators with an identical geometry and fabricated on the same chip. We measure a loss tangent of the amorphous silicon at single-photon energies of $\tanδ=3.7\pm0.5\times10^{-5}$ at $6\ $GHz and $\tanδ= 2.1\pm 0.1\times10^{-4}$ at $350\ $GHz. These results represent very low losses for deposited dielectrics, but the sub-mm wave losses are significantly higher than the microwave losses, which cannot be understood using the standard two-level system loss model.

DOI
10.48550/arxiv.2108.11095

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We present a lab-on-chip experiment to accurately measure losses of superconducting microstrip lines at microwave and sub-mm wavelengths. The microstrips are fabricated from NbTiN, which is deposited using reactive magnetron sputtering, and amorphous silicon which is deposited using plasma-enhanced chemical vapor deposition (PECVD). Sub-mm wave losses are measured using on-chip Fabry-P{é}rot resonators (FPR) operating around 350 350\ 350 GHz. Microwave losses are measured using shunted half-wave resonators with an identical geometry and fabricated on the same chip. We measure a loss tangent of the amorphous silicon at single-photon energies of tan⁡δ=3.7±0.5×10−5\tanδ=3.7\pm0.5\times10^{-5}tanδ=3.7±0.5×10−5 at 6 6\ 6 GHz and tan⁡δ=2.1±0.1×10−4\tanδ= 2.1\pm 0.1\times10^{-4}tanδ=2.1±0.1×10−4 at 350 350\ 350 GHz. These results represent very low losses for deposited dielectrics, but the sub-mm wave losses are significantly higher than the microwave losses, which cannot be understood using the standard two-level system loss model.
Deposited dielectrics with low mm-submm loss will be of great benefit to on-chip superconducting circuits for mm-submm astronomy. Compared with planar chip designs, multilayer structures with deposited dielectrics allow for more compact circuit elements, and eliminate radiation losses at high frequencies. While recently hydrogenated amorphous silicon carbide has been demonstrated to exhibit low dielectric losses at mm-submm wavelengths, the origin of the mm-submm loss in hydrogenated amorphous silicon carbide remains unknown. We measured the 270-600 GHz dielectric losses of hydrogenated amorphous silicon carbide in superconducting microstrip lines. Furthermore, we measured the complex dielectric constant of the hydrogenated amorphous silicon carbide in the 3-100 THz range using Fourier transform spectroscopy. We modeled the loss data from 0.27-100 THz using a Maxwell-Helmholtz-Drude dispersion model. Our results demonstrate that phonon modes above 10 THz dominate the mm-submm losses in deposited dielectrics.
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Dielectric loss in low-temperature superconducting integrated circuits can cause lower overall efficiency, particularly in the 90 to 220 GHz regime. We present a method to tune the dielectric loss for silicon oxide deposited by plasma-enhanced chemical-vapor deposition at ambient temperatures. Deposition in an environment with a higher silane-to-oxygen ratio produces silicon oxide films with a lower loss-tangent and a slightly higher optical index of refraction, while contributing no appreciable change in film stress. We measured the dielectric loss by fabricating a series of Nb-SiOx-Nb microstrip resonators in the frequency range of 6 to 9 GHz and comparing their temperature dependence to a model of parasitic two-level-system fluctuators. The dielectric loss-tangent of silicon oxide was improved from 6 ×10-3for stoichiometric silicon dioxide to 2 ×10-3for a more silicon-rich silicon oxide. We present details of the fabrication process and measurements of microstrip resonators.
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