IEEE MTT-S International Microwave Symposium digest
Practical Considerations for RF Measurements of Cryogenic CMOS Circuits for Quantum Computing
D. Frolov, Sudipto Chakraborty, Devin Underwood, Joseph Glick, John Timmerwilke, R. P. Robertazzi, Ken Inoue, Mark Yeck, Pat Rosno, Bryce Snell, Daniel Moertl, Scott Lekuch, Christopher DeSantis, Kevin Tien, Jean‐Olivier Plouchart, David J. Frank, Dorothy Wisnieff, John F. Bulzacchelli, Christian W. Baks, Daniel J. Friedman, B. Gaucher
Cryogenic CMOS control and readout electronics for quantum computing using superconducting qubits offers several potential advantages versus the use of room temperature electronics, including reduced wiring and lower cost per control channel. The development and practical implementation of such electronics at a mass-production scale for systems with tens of thousands of channels, however, requires circuit characterization in the target cryogenic use environment and with interfaces as close as possible to those that will be used in a real quantum machine. The cryogenic use environment and interfaces for test are usually far from the almost ideal conditions that can be achieved in a regular cryogenic probe station. In this paper, we describe a new testbed for the characterization of CMOS circuits at cryogenic temperatures that solves some of these problems.
Cryogenic CMOS control and readout electronics for quantum computing using superconducting qubits offers several potential advantages versus the use of room temperature electronics, including reduced wiring and lower cost per control channel. The development and practical implementation of such electronics at a mass-production scale for systems with tens of thousands of channels, however, requires circuit characterization in the target cryogenic use environment and with interfaces as close as possible to those that will be used in a real quantum machine. The cryogenic use environment and interfaces for test are usually far from the almost ideal conditions that can be achieved in a regular cryogenic probe station. In this paper, we describe a new testbed for the characterization of CMOS circuits at cryogenic temperatures that solves some of these problems.
Quantum computers could efficiently solve problems that are intractable by today's computers, thus offering the possibility to radically change entire industries and revolutionize our lives. A quantum computer comprises a quantum processor operating at cryogenic temperature and an electronic interface for its control, which is currently implemented at room temperature for the few qubits available today. However, this approach becomes impractical as the number of qubits grows towards the tens of thousands required for complex quantum algorithms with practical applications. We propose an electronic interface for sensing and controlling qubits operating at cryogenic temperature implemented in standard CMOS.
Quantum computing promises an exponential speed-up of computation compared to what is nowadays achievable with classical computers. In this way, it enables the evaluation of more complex models and the breaching of current security algorithms. For the operation of a quantum system, many questions remain to be answered. Currently, there are several quantum technologies that promise to be both reliable and scalable, two features required for large scale quantum operations. Common to all technologies is the operating temperature that needs to be close to absolute zero, i.e. below 100 mK, to suppress environment noise and allow the quantum properties to become 'visible'. In order for any quantum processor to be operated, a so-called quantum-classical interface is required for the quantum bit (qubit) read-out and control. This interface consists of various electronic blocks, such as analog-to-digital converters, digital-to-analog converters, mixers, amplifiers and a digital controller. Especially the analog blocks require effort to meet the noise and stability constraints as not to disturb the very sensitive qubits and allow reading of the tiny signals. As the qubits live in extremely deep-cryogenic temperatures, long wires interface the cryogenic with the room temperature environment, where most of the electronics is situated. However, for a scalable system, heat injection becomes a serious problem, with many wires between 300 K and sub-Kelvin. Furthermore, such amount of interconnects is challenging to mechanically place in a dilution refrigerator. Therefore, in this work, we propose to implement the electronics not at room temperature, but at a temperature much closer to the qubits, for example at 4 K. This not only reduces significantly the wiring between room temperature and the qubits, but we can also benefit from lower electronic noise at such a temperature. The operation of conventional electronics almost 200°C below its normal temperature range is not trivial as device properties alter significantly and most circuits no longer operate as intended. In CMOS processes, the main technology in the integrated electronics world, the behaviour of the transistors, required for the implementation of any circuit, deviates considerably at low temperatures. The transistor's threshold voltage goes up, the mobility increases and the subthreshold slope becomes steeper, to name just a few of these deviations. Although there are improvements in performance, there are also some counter effects, and characterization of the transistors is needed to observe the changes. Once devices are characterized at such low temperatures, new models can be built and circuits can be simulated and adapted to operate properly at cryogenic temperatures. Luckily, there are various commercially available devices that can already withstand the chills of cold. We demonstrated various commercially available devices, such as a field-programmable gate array (FPGA) implemented in a 28 nm CMOS process, to be operating without major concerns at 4~K. Its properties alter only slightly, within 5 to 10%, and all tested circuit implementations, working at 300~K, also worked at 4 K. We combined both commercially available devices, that operate 200 K below their specified temperature range, with custom designed CMOS circuits to implement a cryogenic read-out platform for spin qubits. This system comprises amplifiers, an ADC, an FPGA, voltage regulators and a clock generator. It allows to amplify the tiny signal from the qubits and digitize it directly in the FPGA in order to process the data locally at 4~K. This system is one of the first systematic attempts at operating a part of the quantum-classical interface at cryogenic temperatures and forms the basis for future systems comprising the complete electronic interface for qubits to operate at such low temperatures. One of the main problems to tackle for cryogenic electronic systems is their power consumption. Power budgets are simply limited to roughly 1 or 2 Watts at 4 K and exponentially lower at deeper cryogenic temperatures, thus limiting the size of large-scale electronic systems. Our approach of combined commercial and custom circuits will have to be steadily replaced by a single (custom) technology that meets both power and scalability constraints. One of the best candidates is CMOS, a technology that the industry has relied upon for several decades and benefits from many optimizations thanks to Moore's law.
Quantum computing holds the potential to solve problems beyond the capabilities of classical computers. However, realizing practical large-scale quantum computers faces critical challenges, including the key bottleneck in wiring quantum processors operating at cryogenic temperatures to their room temperature control electronics. This article explores cryo-CMOS ICs as an enabling technology to circumvent such a wiring bottleneck. After reviewing the basics of quantum computing and the behavior of CMOS devices at cryogenic temperatures, the requirements for the interface electronics for superconducting and semiconductor qubits are discussed, and state-of-the-art cryo-CMOS circuit solutions are briefly described, including a few hints to other qubit platforms. Finally, the article concludes with an overview of future challenges to be addressed to realize the vision of cryo-CMOS technology as an enabler of large-scale quantum computers with practical applications.
Most quantum computing platforms are nowadays operating at temperatures of a few Kelvin or lower, and their control and readout electronics are gradually brought close or to the same temperature stages. A pivotal step towards the design of such CMOS circuits is the NMOS and PMOS transistor characterization at cryogenic temperatures. While typically performed in cryogenic probe stations down to liquid helium temperature, the CMOS chip for quantum computing is cooled further along with the qubit sample in dilution refrigerators. Here we propose and discuss a wire-bonded and packaged CMOS characterization setup down to 10mK. Several NMOS and PMOS transistors with various aspect ratios of a 180nm CMOS series die were characterized, to develop a novel PDK model for circuit design.
In the pursuit of quantum computing, solid-state quantum systems, particularly superconducting ones, have made remarkable advancements over the past two decades. However, achieving fault-tolerant quantum computing for next-generation applications necessitates the integration of several million qubits, which presents significant challenges in terms of interconnection complexity and latency that are currently unsolvable with state-of-the-art room-temperature control and readout electronics. Recently, cryogenic integrated circuits (ICs), including CMOS radio-frequency ICs and rapid-single-flux-quantum-logic ICs, have emerged as potential alternatives to room-temperature electronics. Unlike their room-temperature counterparts, these ICs are deployed within cryostats to enhance scalability by reducing the number and length of transmission lines. Additionally, operating at cryogenic temperatures can suppress electronic noise and improve qubit control fidelity. However, for CMOS ICs specifically, circuit design uncertainties arise due to a lack of reliable models for cryogenic field effect transistors as well as issues related to severe fickle noises and power dissipation at cryogenic temperatures. This paper provides a comprehensive review of recent research on both types of cryogenic control and readout ICs but primarily focuses on the more mature CMOS technology. The discussion encompasses principles underlying control and readout techniques employed in cryogenic CMOS ICs along with their architectural designs; characterization and modeling approaches for field effect transistors under cryogenic conditions; as well as fundamental concepts pertaining to rapid single flux quantum circuits.
Quantum computers hold a promise to solve intractable problems that can not be solved with classical computers. In quantum computers, information is processed in qubits as opposed to bits. The proper operation of qubits requires them to be operated in a quantum state; hence they need to be cooled down to temperatures well below l1K. Using qubits and their quantum mechanical property, quantum computers can achieve exponential speedup in solving certain computing problems compared to classical computers. However, this can only be achieved by employing thousands of qubits. At the current state of play, quantum computers are still far from practical. The current state-of-the-art solution dictates that each qubit needs multiple interconnects towards room temperature and requires bulky room temperature instruments for qubit readout and control. Clearly, this current solution will not scale well for a quantum computer with many qubits. In an effort to solve this issue, it has been proposed to realize dedicated integrated circuits for control and readout of the qubits and operate them closer to the qubits' operating temperature to enable scalability. The thesis presents the implementation of an integrated RF receiver for spin and superconducting qubit readout applications. The work aims to replace the bulky room temperature electronics with an integrated solution that operates at 4K to enable scalability and simplification of the quantum computing architecture. The receiver has been designed in the TSMC 40nm CMOS technology and has been characterized in room temperature and 4K. The measured performance shows that the receiver features a gain of 58 dB and a minimum double-sideband noise figure of 0.6 dB at 4K with an operating frequency of 6-8 GHz; a comparable performance to the current state-of-the-art room temperature electronics used for qubit readout. Moreover, this work demonstrates a qubit readout experiment with the integrated receiver in both room temperature and 4K. The qubit readout experiment shows a comparable qubit readout performance with the integrated receiver at room temperature. However, due to oscillation problems, a degradation in qubit readout performance with the chip operating at 4K is observed.