Optical manipulation of quantum systems requires stable laser sources able to produce complex waveforms over a large frequency range. In the visible region, such waveforms can be generated using an acousto-optic modulator driven by an arbitrary waveform generator, but these suffer from a limited tuning range typically of a few tens of MHz. Visible-range electro-optic modulators are an alternative option offering a larger modulation bandwidth, however they have limited output power which drastically restricts the scalability of quantum applications. There is currently no architecture able to perform phase-stabilized waveforms over several GHz in the visible or near infrared region while providing sufficient optical power for quantum applications. Here we propose and develop a modulation and frequency conversion set-up able to deliver optical waveforms over a large frequency range, with a high spurious extinction ratio, scalable to the entire visible/near infrared region with high optical power. The optical waveforms are first generated at telecom wavelength and then converted to the emitter wavelength through a sum frequency generation process. By adapting the pump laser frequency, the optical waveforms can be tuned to interact with a broad range of optical quantum emitters or qubits such as alkali atoms, trapped ions, rare earth ions, or fluorescent defects in solid-state matrices. Using this architecture, we were able to detect and study a single erbium ion in a nanoparticle. We also generated high bandwidth signals at 606 nm, which would enable frequency multiplexing of on-demand read-out Pr3+:Y2SiO5 quantum memories.
Optical manipulation of quantum systems requires stable laser sources able to produce complex waveforms over a large frequency range. In the visible region, such waveforms can be generated using an acousto-optic modulator driven by an arbitrary waveform generator, but these suffer from a limited tuning range typically of a few tens of MHz. Visible-range electro-optic modulators are an alternative option offering a larger modulation bandwidth, however they have limited output power which drastically restricts the scalability of quantum applications. There is currently no architecture able to perform phase-stabilized waveforms over several GHz in the visible or near infrared region while providing sufficient optical power for quantum applications. Here we propose and develop a modulation and frequency conversion set-up able to deliver optical waveforms over a large frequency range, with a high spurious extinction ratio, scalable to the entire visible/near infrared region with high optical power. The optical waveforms are first generated at telecom wavelength and then converted to the emitter wavelength through a sum frequency generation process. By adapting the pump laser frequency, the optical waveforms can be tuned to interact with a broad range of optical quantum emitters or qubits such as alkali atoms, trapped ions, rare earth ions, or fluorescent defects in solid-state matrices. Using this architecture, we were able to detect and study a single erbium ion in a nanoparticle. We also generated high bandwidth signals at 606 nm, which would enable frequency multiplexing of on-demand read-out Pr3+:Y2SiO5 quantum memories.
Manipulation of optically addressable quantum emitters need stable laser sources able to perform complex and high bandwidth waveforms from visible range to infrared. Such waveforms can be generated using an acoustic-optical modulator; however with a limited bandwidth. Here we present a laser source able to deliver high-bandwidth and low noise optical signals at multiple frequencies over a span of a few GHz (scalable to 100 GHz), with a high extinction ratio with respect to all other spurious optical signals. The central wavelengths can be tuned to match the resonance of different optical quantum emitters in the visible or IR.
Achieving broadband on-chip optical amplification spanning the visible and near-infrared (NIR) can enable diverse quantum sensing, metrology, and classical communication applications within a single unified device. However, conventional semiconductor and ion-doped amplifiers suffer from limited gain bandwidths set by fixed energy levels, while optical parametric amplifiers (OPAs) operating continuously from the visible to the NIR have remained elusive due to dispersion-limited bandwidth and the high pump powers required in the visible or ultraviolet (UV). Here, we overcome these limitations by introducing an electrically reconfigurable OPA architecture on lithium niobate integrated photonics. By synergistically combining ultra-high effective χ(2) nonlinearity ($\sim7,000%/W−cm^2$), high-order dispersion engineering, and local electro-thermal tuning of quasi-phase matching, our device achieves record gain spectral spanning more than an optical octave, from 770 to 1650 nm. This range covers key transitions of many photonic quantum systems and all telecommunication bands. Moreover, our approach eliminates the need for high-power, wavelength-tunable visible or UV pumps, delivering a peak on-chip gain of 23.67 dB with a single 1060 nm pump at 90 mW average on-chip power. This work opens new avenues for multi-functional, reconfigurable photonics unifying the visible and infrared regimes, with broad implications for quantum sensing and communications.
Integrated visible photonic engines for solid-state quantum defects provide a foundation for scalable quantum networks. While miniaturization is advancing, active manipulation remains limited by the difficulty of achieving simultaneous milliwatt-scale visible light generation and high-contrast modulation. Despite extensive efforts, the concurrent chip-scale realization of nonlinear frequency conversion and fast temporal gating for high-fidelity quantum control has remained elusive. Here, we demonstrate a monolithic thin-film lithium niobate (TFLN) platform integrating periodically poled frequency conversion with GHz-bandwidth electro-optic (EO) switching. The device delivers off-chip green-light power exceeding 1 mW with an extinction ratio (ER) of 42.2 dB, enabling coherent spin control and time-resolved lifetime measurements of individual nitrogen-vacancy (NV) centers in diamond through nanosecond gating. System performance is validated through pulsed optically detected magnetic resonance (ODMR), Rabi oscillations, and Ramsey interference, supported by time-tagged photon counting with nanosecond resolution. By unifying sufficient nonlinear light generation with high-speed active manipulation, this platform establishes a scalable framework for the realization of high-rate quantum communication nodes.
Phase-coherent multi-tone lasers play a critical role in atomic, molecular, and optical physics.Among them, the Raman opeartion laser for manipulating atomic hyperfine qubits requires gigahertz bandwidth and low phase noise to retain long-term coherence.Raman operation lasers generated by directly modulated and frequency-multipled infrared lasers are compact and stable but lack feedback control to actively suppress the phase noise, which limits their performance in practical applications.In this work, we employ a fiber electro-optical modulator driven by a voltage-controlled oscillator (VCO) to modulate a monochromatic laser and employ a second-harmonic generation process to convert it to the visible domain, where the beat note of the Raman operation laser is stabilized by controlling the output frequency of VCO with a digital phase-locked loop (PLL).The low-frequency phase noise is effectively suppressed compared to the scheme without active feedback and it reaches -80 dBc=Hz@5 kHz with a 20 kHz loop bandwidth.Furthermore, this compact and robust scheme effectively reduces the system's complexity and cost, which is promising for extensive application in atomic, molecular, and optical physics.
The growing interest in optical quantum systems has led to the exploration of multiple platforms. Though pioneering experiments were performed in trapped atom and trapped ion systems, solid state systems show promise of being scalable and robust. Rare earth dopants in crystalline hosts are an appealing option because they possess a rich spectrum of energy levels that result from a partially filled electron orbital. While level structure varies across the period, all elements possess crystal field splittings corresponding to near infra-red or optical frequencies, as well as Zeeman and often hyperfine levels separated by radio frequency and microwave frequencies. These levels demonstrate long excited-state lifetimes and coherence times and have been used in diverse applications, including demonstrating storage of a photonic state, converting of optical to microwave photons, and manipulating a single ion as a single qubit. The ions' weak interaction with their environment results in low coupling to optical fields, which had previously required measurements with macroscopically large ensembles of ions. Coupling the ions to an optical cavity enables the use of a smaller ensemble, which is required for the development of the aforementioned technologies in an on-chip scalable architecture. This thesis contains recent progress towards fabricating optical micro and nanocavities coupled to ensembles of erbium ions, mainly erbium in yttrium orthosilicate. In one design, focused ion beam milling was used to create a triangular nanobeam photonic crystal cavity in a bulk erbium-doped substrate. A second design leveraged the fabrication capabilities of silicon photonics, defining amorphous silicon ring resonators using electron beam lithography and dry etching. These devices coupled evanescently to erbium ions below the ring, in the bulk substrate. Simulation, design, fabrication, and characterization of both resonators are discussed. Coupling between the ions and the resonator is demonstrated for each, and capabilities offered by these devices are described. Preliminary work implementing coherent control of erbium ions is presented. Lastly, alternative substrates are evaluated for possible future solid-state erbium systems.
This thesis presents on-chip quantum storage of telecommunication wavelength light using nanophotonic resonators coupled to erbium ions. Storage of light in an optical quantum memory has applications in quantum information and quantum communication. For example, long distance quantum communication using quantum repeater protocols is enabled by quantum memories. Efficient and broadband quantum memories can be made from resonators coupled to ensembles of atoms. Like other rare earth ions, erbium is appealing for quantum applications due to its long optical and hyperfine coherence times in the solid state at low temperatures. However, erbium is unique among rare earth ions in having an optical transition in the telecommunication C band (1540 nm), making it particularly appealing for quantum communication applications. In this work, we use nano-scale resonators coupled to erbium-167 ions in yttrium orthosilicate crystals (167Er 3+:Y2SiO5). We demonstrate quantum storage in two types of resonators. In a nanobeam photonic crystal resonator milled directly in 167Er 3+:Y2SiO5, we show storage of weak coherent states using the atomic frequency comb protocol. The storage fidelity for single photon states is estimated to be at least 93.7% ± 2.4% using decoy state analysis, Storage of up to 10 μs and multimode storage are demonstrated. Using a hybrid amorphous silicon 167Er 3+:Y2SiO5 resonator and on-chip electrodes, we demonstrate a multifunctional memory using the atomic frequency comb protocol with DC Stark shift control. In addition dynamic control of memory time, Stark shift control allows modifications to the frequency and bandwidth of stored light. We show tuning of the output pulse by ± 20 MHz relative to the input pulse, and broadening of the pulse bandwidth by more than a factor of three. The storage efficiency in both devices was limited to < 1%. On the way to these results, we describe 167Er 3+:Y2SiO5 spectroscopy measurements including optical coherence times and hyperfine lifetimes below 1 K, and we estimate the linear DC stark shift along two crystal directions. The design and fabrication of the on-chip resonators is presented. We discuss the limitations to storage time and efficiency, including superhyperfine coupling and resonator parameters, and we outline a path forward for improving the storage efficiency in these types of devices.