Russian Microelectronics
Enhancing Efficiency of the Fast Quantum Memory on Single-Atom in Cavity
Yu. A. Kharlamova, Арсланов Наркис Мусавирович, Sergey A. Moiseev
Abstract
Abstract The operation of a fast quantum memory protocol on a single three-level atom in cavity is theoretically modeled. The influence of losses, such as cavity loss and atomic relaxation on the efficiency of photon loading on long-lived atomic states, is considered. By choosing the optimal experimentally achieved parameters of the system and control pulse, we show the possibility of increasing efficiency up to 56.9% for a hyperbolic secant signal photon wave packet, which is 2 times more than the efficiency achieved so far for such quantum memory.