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IEEE Transactions on Applied Superconductivity

Superconducting NbTi Radiofrequency Resonator for Surface ion Traps

M. Schubert, D. Fegelein, Dominik Hanisch, Max Pröpper, Meinhard Schilling, Benedikt Hampel

Published Jan 8, 2024• 0 citations
Publisher

Abstract

Trapped-ion qubits are one approach among many for achieving scalable quantum computers. An ion trap has to be operated with several dc and radio frequency (rf) signals to trap and control its qubits. Many ion trap setups are operated at cryogenic temperatures to reduce thermal influences, to reach very high vacuum, and to achieve high fidelity for quantum operations. A resonance circuit, consisting of a coil and the capacitance of the trap electrodes, is used to step-up a low power rf signal to high amplitudes in close proximity to the ion trap. These ac fields are used to confine ions$70 \,{\rm \mu }\mathrm{m}$above a surface ion trap chip. An increased quality factor (Q-factor) of the resonance circuit leads to a higher voltage gain, but the experiment also benefits from a better attenuation of parasitic frequency components in the confining electric field. The Q-factor is inversely proportional to the trap capacitance. Since ion traps are growing in size due to a larger number of qubits, the capacitance is increasing. Therefore, the development of a coil with low losses becomes even more important. In this work, we present the setup of a superconducting coil for a high-Q resonator, measurements of the Q-factor, and its temperature dependency. The coil is made of a niobium-titanium (NbTi) wire wound on a threaded bobbin made of ceramics and equipped with further thermalization structures. The superconducting resonator is a very promising approach to satisfy the needs for future trapped-ion quantum computing setups.

DOI
10.1109/tasc.2024.3350588

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AVS Quantum Science•Jun 1, 2026•1 citation
Trapped-ion qubits are one approach among many for achieving scalable quantum computers. An ion trap has to be operated with several dc and radio frequency (rf) signals to trap and control its qubits. Many ion trap setups are operated at cryogenic temperatures to reduce thermal influences, to reach very high vacuum, and to achieve high fidelity for quantum operations. A resonance circuit, consisting of a coil and the capacitance of the trap electrodes, is used to step-up a low power rf signal to high amplitudes in close proximity to the ion trap. These ac fields are used to confine ions70 μm70 \,{\rm \mu }\mathrm{m}70μmabove a surface ion trap chip. An increased quality factor (Q-factor) of the resonance circuit leads to a higher voltage gain, but the experiment also benefits from a better attenuation of parasitic frequency components in the confining electric field. The Q-factor is inversely proportional to the trap capacitance. Since ion traps are growing in size due to a larger number of qubits, the capacitance is increasing. Therefore, the development of a coil with low losses becomes even more important. In this work, we present the setup of a superconducting coil for a high-Q resonator, measurements of the Q-factor, and its temperature dependency. The coil is made of a niobium-titanium (NbTi) wire wound on a threaded bobbin made of ceramics and equipped with further thermalization structures. The superconducting resonator is a very promising approach to satisfy the needs for future trapped-ion quantum computing setups.
Microwave-driven trapped ion logic gates offer a promising avenue for advancing beyond laser-based logic operations. In future microwave-based operations, however, the joule heat produced by large microwave currents flowing through narrow microwave electrodes would potentially hinder improvements in gate speed and fidelity. Moreover, scalability, particularly in cryogenic trapped ion systems, is impeded by the excessive joule heat. To address these challenges, we present a novel approach: superconducting surface trap chips that integrate high- Q microwave resonators with large current capacities. Utilizing sub-ampere microwave currents in superconducting Nb resonators, we generate substantial magnetic field gradients with significantly reduced losses compared to conventional metal chips. By harnessing the high Q factors of superconducting resonators, we propose a power-efficient two-qubit gate scheme capable of achieving a sub-milliwatt external microwave input power at a gate Rabi frequency of 1 kHz.
Quantum technology has made great strides in the last two decades with trapped ions demonstrating all the necessary building blocks for a quantum computer. While these proof of principle experiments have been demonstrated, it still remains a challenging task to scale these experiments down to smaller systems. In this thesis I describe the development of technology towards scalable cryogenic ion trapping and quantum hybrid systems. I first discuss the fundamentals of ion trapping along with the demonstration of ion trapping on a novel surface electrode ion trap with a ring shaped architecture. I then present the development of a cryogenic vacuum system for ion trapping at ~4 K, which utilizes a closed cycle Gifford McMahon cryocooler with a helium gas buffered ultra-low vibration interface to mechanically decouple a ultra-high vacuum system. Ancillary technologies are also presented, including a novel in-vacuum superconducting rf resonator, low power dissipation ceramic based atomic source oven and an adaptable in-vacuum permanent magnet system for long-wavelength based quantum logic. The design and fabrication of microfabricated surface ion traps toward quantum hybrid technologies are then presented. A superconducting ion trap with an integrated high quality factor microwave cavity and vertical ion shuttling capabilities is described. The experimental demonstration of the cavity is also presented with quality factors of Q6~6000 and Q~15000 for superconducting niobium nitride and gold based cavities respectively, which are the highest demonstrated for microwave cavities integrated within ion trapping electrode architectures. An ion trap with a multipole electrode geometry is then presented, which is capable of trapping a large number of ions simultaneously. The homogeneity of five individual linear trapping regions are optimized and the design for the principle axis rotation of each linear region is presented. An overview of microfabrication techniques used for fabricating surface electrode ion traps is then presented. This includes the detailed microfabrication procedure for ion traps designed within this thesis. A scheme for the integration of ion trapping and superconducting qubit systems as a step towards the realization of a quantum hybrid system is then presented. This scheme addresses two key diffculties in realizing such a system; a combined microfabricated ion trap and superconducting qubit architecture, and the experimental infrastructure to facilitate both technologies. Solutions that can be immediately implemented using current technology are presented. Finally, as a step towards scalability and hybrid quantum systems, the interaction between a single ion and a microwaves field produced from an on chip microwave cavity is explored. The interaction is described for the high-Q microwave cavity designed in this thesis and a 171Yb+ion. A description of the observable transmission from the cavity is described and it is shown that the presence of a single ion can indeed be observed in the emission spectrum of high-Q microwave cavity even in the weak coupling regime.
State readout of trapped-ion qubits with trap-integrated detectors can address important challenges for scalable quantum computing, but the strong radio frequency (rf) electric fields used for trapping can impact detector performance. Here, we report on NbTiN superconducting nanowire single-photon detectors (SNSPDs) employing grounded aluminum mirrors as electrical shielding that are integrated into linear surface-electrode rf ion traps. The shielded SNSPDs can be operated at applied rf trapping potentials of up to 54 Vpeak at 70 MHz and temperatures of up to 6 K, with a maximum system detection efficiency of 68%. This performance should be sufficient to enable parallel high-fidelity state readout of a wide range of trapped ion species in a typical cryogenic apparatus.
We report on the investigation and implementation of a lumped-component, radio-frequency resonator used in a cryogenic vacuum environment to drive an ion trap. The resonator was required to achieve the voltages necessary to trap (~100 V), while dissipating very little power. Ultimately, for an input voltage of 1.35 V, a voltage gain of 100 was measured at 5.7 K, using a design which dissipated only 18 mW. The resonator operated at a frequency of 7.64 MHz and had a Q of 700. Single (40)Ca(+) ions were confined in a trap driven by this device, providing proof of successful resonator operation at low temperature.
Surface ion traps with two-dimensional layouts of trapping regions are natural architectures for storing large numbers of ions and supporting the connectivity needed to implement quantum algorithms. Many of the components and operations needed to fully exploit this architecture have already been demonstrated, including operation at cryogenic temperatures with low heating, low excitation transport, and ion control and detection with integrated photonics. Here we demonstrate a trap that addresses the scaling challenge of increasing power dissipation as the RF electrode increases in size. By raising the RF electrode and removing most of the insulating dielectric layer below it we reduce both ohmic and dielectric power dissipation. We also measure heating rates across a range of motional frequencies and for different voltage sources in a trap with a raised RF electrode but solid dielectric.
Large surface-electrode ion traps with multiple trapping regions and junctions are a natural approach to scaling trapped ion quantum computers, supporting the connectivity and ion counts necessary for complex quantum algorithms. However, a major hurdle in this scaling is on-chip power dissipation from the applied RF voltage, which increases at a rate between linear and cubic relative to trap size, depending on whether the losses are dielectric or Ohmic. Here, we present two versions of a trap with features designed to reduce both types of RF power dissipation. The first variant contains a raised RF electrode that increases the electrode–ground distance to reduce capacitance. Different DC voltage sources are demonstrated on this trap to show that technical noise before the filter remains the dominant source of voltage noise and therefore motional heating. The second variant additionally includes a method for removing dielectric from beneath the RF electrode to further reduce dielectric losses. These traps were demonstrated at room temperature with 40Ca+ ions. The similar heating rates and heating rate axial frequency dependencies between 2.4 and 3.0 MHz illustrate that this dielectric modification is not detrimental to trap performance.