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Журнал технической физики

Влияние внешнего переменного электрического поля на эффективность сверхпроводникового однофотонного детектора

К. О. Седых, Е. Сулеймен, М.И. Святодух, А. Подлесный, В.В. Ковалюк, П.П. Ан, N. Kaurova, Irina Florya, Kirill Lakhmanskiy, Г.Н. Гольцман

Published Jan 1, 2023• 0 citations
Publisher

Abstract

In this paper, model of a surface ion trap for a scalable quantum computer with an RF electrode and a superconducting single-photon detector was studied with an operating temperature of 4K. The amplitude range of the radio frequency signal varied from 10 to 800 mV at frequencies from 5 to 20 MHz. The effect of the induced external RF field of the trap on the dark and bright count rate of a single-photon detector is studied. The results of this work are important in the design of surface ion traps with planar single-photon detectors.

DOI
10.21883/jtf.2023.07.55756.88-23

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•Aug 6, 2011•1 citation
In this paper, model of a surface ion trap for a scalable quantum computer with an RF electrode and a superconducting single-photon detector was studied with an operating temperature of 4K. The amplitude range of the radio frequency signal varied from 10 to 800 mV at frequencies from 5 to 20 MHz. The effect of the induced external RF field of the trap on the dark and bright count rate of a single-photon detector is studied. The results of this work are important in the design of surface ion traps with planar single-photon detectors.
Abstract In this paper, model of a surface ion trap for a scalable quantum computer with an RF electrode and a superconducting single-photon detector was studied with an operating temperature of 4 K. The amplitude range of the radio frequency signal varied from 10 to 800 mV at frequencies from 5 to 20 MHz. The effect of the induced external RF field of the trap on the dark and bright count rate of a single-photon detector is studied. The results of this work are important in the design of surface ion traps with planar single-photon detectors.
State readout of trapped-ion qubits with trap-integrated detectors can address important challenges for scalable quantum computing, but the strong radio frequency (rf) electric fields used for trapping can impact detector performance. Here, we report on NbTiN superconducting nanowire single-photon detectors (SNSPDs) employing grounded aluminum mirrors as electrical shielding that are integrated into linear surface-electrode rf ion traps. The shielded SNSPDs can be operated at applied rf trapping potentials of up to 54 Vpeak at 70 MHz and temperatures of up to 6 K, with a maximum system detection efficiency of 68%. This performance should be sufficient to enable parallel high-fidelity state readout of a wide range of trapped ion species in a typical cryogenic apparatus.
We demonstrate superconducting nanowire single photon detectors with 76 ± 4% system detection efficiency at a wavelength of 315 nm and an operating temperature of 3.2 K, with a background count rate below 1 count per second at saturated detection efficiency. We propose integrating these detectors into planar surface electrode radio-frequency Paul traps for use in trapped ion quantum information processing. We operate detectors integrated into test ion trap structures at 3.8 K both with and without typical radio-frequency trapping electric fields. The trapping fields reduce system detection efficiency by 9%, but do not increase background count rates.
Dependence of quantum efficiency on energy of a photon for superconducting single-photon detector (SSPD) is modeled. The “hot-spot” model, describing quasiparticle multiplication, their diffusion, local suppression of superconductivity and supercurrent redistribution in the strip of the detector, is utilized. To describe response at low energy of quanta, a concept of fluctuation-assisted nucleation of the resistive state is applied. Qualitative formulas are derived, describing spectral and current dependency of quantum efficiency in the limits of low and high efficiency. The formulas can be used to describe response of SSPD in the whole range of wavelengths. The result allows to specialize conditions of operation corresponding to high values of the detector quantum efficiency. Thereby, absence of red-cutoff for SSPD is theoretically explained, an ability to obtain high quantum efficiency in IR-range is confirmed.
Trapped-ion qubits are one approach among many for achieving scalable quantum computers. An ion trap has to be operated with several dc and radio frequency (rf) signals to trap and control its qubits. Many ion trap setups are operated at cryogenic temperatures to reduce thermal influences, to reach very high vacuum, and to achieve high fidelity for quantum operations. A resonance circuit, consisting of a coil and the capacitance of the trap electrodes, is used to step-up a low power rf signal to high amplitudes in close proximity to the ion trap. These ac fields are used to confine ions70 μm70 \,{\rm \mu }\mathrm{m}70μmabove a surface ion trap chip. An increased quality factor (Q-factor) of the resonance circuit leads to a higher voltage gain, but the experiment also benefits from a better attenuation of parasitic frequency components in the confining electric field. The Q-factor is inversely proportional to the trap capacitance. Since ion traps are growing in size due to a larger number of qubits, the capacitance is increasing. Therefore, the development of a coil with low losses becomes even more important. In this work, we present the setup of a superconducting coil for a high-Q resonator, measurements of the Q-factor, and its temperature dependency. The coil is made of a niobium-titanium (NbTi) wire wound on a threaded bobbin made of ceramics and equipped with further thermalization structures. The superconducting resonator is a very promising approach to satisfy the needs for future trapped-ion quantum computing setups.
Trapped ions in linear Paul traps are largely isolated from interaction with the environment. This property of trapped ions make them a primary choice for quantum technology. \nOver the last decade, trapped atomic ions in linear radio frequency Paul traps have shown to be an important tool to implement quantum algorithms. The scalability of linear ion \ntraps is required to handle large numbers of qubits, in order to implement useful quantum computation. Advance micro-fabrication technology allows the realisation of scalable ion traps. Further developments of micro-trap designs, for the purpose of scalable quantum technology, requires inter-disciplinary investigations of ion traps. Micro-scale ion trap designs typically require a versatile experimental setup. The first part of this thesis describes such an experimental setup including a chip bracket that can host macroscopic ion traps as well as advanced symmetric and asymmetric ion trap chips with up to 90 control electrodes. The system provides versatile optical access for both type of traps and the vacuum chamber is designed in a way so the ion traps can be replaced within a short amount of time. To test the working of the setup, a macroscopic ion trap with an ion-electrode distance of 310±10 μm is used to trap ytterbium ions (Yb+). The trap is characterised by measuring the heating rate, (n•), and spectral noise density SE(ω). A \nphotoionisation technique is used to ionise the different isotopes of Yb in our trap. Isotope selective photoionisation requires exact measurements of 1So↔1P1 transition for the different Yb isotopes. A technique to measure these resonant frequencies is described. \nThis technique works by observing and aligning fluorescence spots and by using this technique, the 1So↔1P1 transition frequencies for stable isotopes of Yb were measured with an accuracy of 60 MHz. These new measured transition frequencies for stable Yb isotopes differ from previously published work by 660 MHz. Furthermore, this technique can also be used to obtain the transition frequencies at different laser-atomic beam angles, typical for non-perpendicular laser-atomic beam angles. The second part of this thesis discusses the optimisation of surface trap geometries as they are being used to implement scalable ion trap designs which consist of a large number of trapping zones. The trap depth in surface traps is low compared to symmetric traps of similar dimensions. How to optimise the trap geometry to achieve maximum trap depth for a given ion height above the trap electrodes, is discussed. Fast and adiabatic ion shuttling operations in one dimension as well as ion separation and recombination processes are important for many quantum information implementations. The maximum speed of separation of trapped ions for adiabatic shuttling operations depends on the secular frequencies, the trapped ion experiences in the process. It will be shown how such ion trap structures have to be designed for fast ion separation process and linear shuttling. Numerical results of adiabatic shuttling operations for trapped ions in such trap structures are also presented.