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arXiv:1611.09949 · Optics Express

UV-sensitive superconducting nanowire single photon detectors for integration in an ion trap

D. H. Slichter, Varun Verma, D. Leibfried, Richard P. Mirin, S. W. Nam, D. J. Wineland

Published Apr 5, 2017• 58 citations
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Abstract

We demonstrate superconducting nanowire single photon detectors with 76 ± 4% system detection efficiency at a wavelength of 315 nm and an operating temperature of 3.2 K, with a background count rate below 1 count per second at saturated detection efficiency. We propose integrating these detectors into planar surface electrode radio-frequency Paul traps for use in trapped ion quantum information processing. We operate detectors integrated into test ion trap structures at 3.8 K both with and without typical radio-frequency trapping electric fields. The trapping fields reduce system detection efficiency by 9%, but do not increase background count rates.

DOI
10.1364/oe.25.008705

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•Jan 1, 2017•1 citation
We demonstrate superconducting nanowire single photon detectors with 76 ± 4% system detection efficiency at a wavelength of 315 nm and an operating temperature of 3.2 K, with a background count rate below 1 count per second at saturated detection efficiency. We propose integrating these detectors into planar surface electrode radio-frequency Paul traps for use in trapped ion quantum information processing. We operate detectors integrated into test ion trap structures at 3.8 K both with and without typical radio-frequency trapping electric fields. The trapping fields reduce system detection efficiency by 9%, but do not increase background count rates.
State readout of trapped-ion qubits with trap-integrated detectors can address important challenges for scalable quantum computing, but the strong radio frequency (rf) electric fields used for trapping can impact detector performance. Here, we report on NbTiN superconducting nanowire single-photon detectors (SNSPDs) employing grounded aluminum mirrors as electrical shielding that are integrated into linear surface-electrode rf ion traps. The shielded SNSPDs can be operated at applied rf trapping potentials of up to 54 Vpeak at 70 MHz and temperatures of up to 6 K, with a maximum system detection efficiency of 68%. This performance should be sufficient to enable parallel high-fidelity state readout of a wide range of trapped ion species in a typical cryogenic apparatus.
For photon-counting applications at ultraviolet wavelengths, there are currently no detectors that combine high efficiency (> 50%), sub-nanosecond timing resolution, and sub-Hz dark count rates. Superconducting nanowire single-photon detectors (SNSPDs) have seen success over the past decade for photon-counting applications in the near-infrared, but little work has been done to optimize SNSPDs for wavelengths below 400 nm. Here, we describe the design, fabrication, and characterization of UV SNSPDs operating at wavelengths between 250 and 370 nm. The detectors have active areas up to 56 μm in diameter, 70 - 80% efficiency at temperatures up to 4.2 K, timing resolution down to 60 ps FWHM, blindness to visible and infrared photons, and dark count rates of ∼ 0.25 counts/hr for a 56 μm diameter pixel. These performance metrics make UV SNSPDs ideal for applications in trapped-ion quantum information processing, lidar studies of the upper atmosphere, UV fluorescent-lifetime imaging microscopy, and photon-starved UV astronomy.
State readout of trapped-ion qubits is usually achieved by observing qubit-state-dependent fluorescence from the ion while driving an optical cycling transition with laser light. The integration of photon detectors for fluorescence detection into the ion trap itself may benefit the development of many-qubit setups for applications like quantum computing. Superconducting nanowire single-photon detectors (SNSPDs) are promising candidates for trap-integrated detectors for high-fidelity trapped-ion qubit state readout. However, the strong oscillating electromagnetic fields that are typically used to trap and manipulate ions can affect the function of the SNSPDs significantly. In this work, we demonstrate an improved design to integrate SNSPDs into linear rf ion traps that reduces the susceptibility of the SNSPDs to applied rf trapping potentials. Our measurement results represent an improvement in rf tolerance by an order of magnitude with an increase in operation temperature from 3.5K to 6K compared to previous work.
Atomic ions can be trapped in vacuum with dc and rf electric potentials generated by surface electrode ion traps, and used as qubits in quantum computing applications. Qubit state preparation and control is usually accomplished with laser light while the qubit state readout is achieved by observing qubit-state-dependent fluorescence from the ion while driving an optical cycling transition. The monolithic integration of optical waveguides and single-photon detectors into the ion trap itself provides both light delivery and fluorescence photon counting capability, offering benefits for scaling in trapped ion quantum computing by eliminating the need for free-space optical access to the trap. One promising candidate for integrated high-fidelity trapped-ion qubit state readout are superconducting nanowire single-photon detectors (SNSPDs). However, the joint integration of photonics and superconducting detectors into ion trap chips presents challenges for their design, fabrication, and operation. In this work, we present our progress on the integration of SNSPDs into linear ion traps with integrated photonics designed for Ca+ qubits.
Single photon detectors are a vital part of many emerging technologies which harness the quantum properties of light to benefit the fields of communication, computation and sensing. Superconducting nanowire single photon detectors (SNSPDs) offer high detection efficiency, low dark count rates, low timing jitter, and infrared sensitivity that are required by the most demanding single photon counting applications. This thesis presents SNSPDs fabricated and tested at the University of Glasgow that are integrated with optical structures which enable enhanced detection efficiency and integration with waveguide circuit technology. The monolithic integration of waveguide circuit components presents a route towards realisation of an optical quantum information processor that has the stability and scalability to perform the demanding tasks of quantum computation. A novel process is introduced for incorporating superconducting detectors with single mode gallium arsenide waveguides and quantum dot single photon sources. Together these elements would enable the generation of quantum states of light which could be manipulated and detected on a single chip. Detectors are patterned in NbTiN thin superconducting films on to suspended nanobeam waveguides with better than 50 nm alignment accuracy. Low temperature electrical and optical testing confirms the detectors’ single photon sensitivity under direct illumination as well as to waveguide coupled light. Measured detectors were found to have internal registering efficiencies of 6.8 ± 2.4%. Enhancing absorption of photons into thin superconducting films is vital to the creation of high efficiency superconducting single photon detectors. Fabricating an SNSPD on a dielectric mirror creates a partial cavity that can be tailored to enhance detection of light at specific wavelengths. Devices have been fabricated and tested in this thesis with enhanced detection efficiency at infrared and visible wavelengths for quantum cryptography, remote sensing and life science applications. Detectors fabricated in NbTiN on GaAs/AlGaAs Bragg mirrors exhibited a system detection efficiency of 1.5% at 1500 nm wavelength for the best device measured. SNSPDs were also fabricated in NbN on aperiodic dielectric mirrors with a range of different bandwidths. A peak system detection efficiency of 82.7% at 808 nm wavelength was recorded.