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Optics Letters

Nonlinear optical bistability based on epsilon-near-zero mode in near-infrared band

Jiao Xu, Yuxiang Peng, Jie Jiang, Shengyou Qian, Leyong Jiang

Published May 8, 2023• 9 citations
Publisher

Abstract

We propose a simple thin-layer structure based on epsilon-near-zero mode field enhancement to achieve optical bistability in the near-infrared band. The high transmittance provided by the thin-layer structure and the electric field energy limited in the ultra-thin epsilon-near-zero material means that the interaction between the input light and the epsilon-near-zero material can be greatly enhanced, creating favorable conditions for the realization of optical bistability in near-infrared band. The optical bistability hysteresis curve is closely related to the incident angle of light and the thickness of epsilon-near-zero material. This structure is relatively simple and easy to prepare, so we believe that this scheme will have a positive effect on the practicality of optical bistability devices in all-optical devices and networks.

DOI
10.1364/ol.488889

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We propose a simple thin-layer structure based on epsilon-near-zero mode field enhancement to achieve optical bistability in the near-infrared band. The high transmittance provided by the thin-layer structure and the electric field energy limited in the ultra-thin epsilon-near-zero material means that the interaction between the input light and the epsilon-near-zero material can be greatly enhanced, creating favorable conditions for the realization of optical bistability in near-infrared band. The optical bistability hysteresis curve is closely related to the incident angle of light and the thickness of epsilon-near-zero material. This structure is relatively simple and easy to prepare, so we believe that this scheme will have a positive effect on the practicality of optical bistability devices in all-optical devices and networks.
Optical bistability has attracted much attention due to its enormous potential applications in all-optical operation and signal processing. However, the weak nonlinear responses typically require huge pump power to reach the threshold of the optical bistability, thus hindering the real applications. In this study, we propose an efficient optical bistable metamaterial, which is composed of multilayer Ga2O3-SiC-Ag metal-dielectric nanostructures. We not only use the epsilon-near-zero (ENZ) with SiC-Ag thin layers to enhance the substantial field, but also incorporate the SiC material to increase its significant optical nonlinear coefficient. In the structural design, the introduction of Ga2O3 layer facilitates the light field concentration, contributing to the further reduction in threshold power for optical bistability, and also conducing to the improvement of the physical and chemical stability of the device. The influences of the thickness and length of the ENZ layer on the optical bistability are systematically investigated by using the finite element method. The results demonstrate that optical bistability becomes more pronounced with the increase of the thickness and length of ENZ layer, exhibiting a bistability switching threshold as low as ~10–6 W/cm2 in the telecommunication band. Comparing with the previously reported optical bistability based on ENZ mechanism, the threshold shows a significant reduction by 9 orders of magnitude, demonstrating great application potential in the fields of semiconductor devices and photonic integrated circuits.
Optical bistability opens up a promising avenue toward various optical nonlinear functions analogous to their electrical counterparts, such as switches, logic gates, and memory. Free-space bistable devices have unique advantages in large-scale integration. However, most proposed free-space schemes for optical bistability have limitations in one or more aspects of low contrast ratio, compromised compatibility, slow switching speed, and bulk size. Epsilon-near-zero (ENZ) materials have recently shown an ultrafast and giant optical nonlinearity within a subwavelength scale, potentially overcoming these obstacles. Using large-mobility indium-doped cadmium oxide (CdO) as the ENZ material, we numerically demonstrate two efficient schemes for high-contrast optical bistability within a deep subwavelength size based on the ENZ mode and the Berreman mode. The ENZ wavelength can be optically tuned with a typical time scale of sub-picoseconds, giving rise to a switchable bistability between the near-zero state and the high-reflection state. Our work contributes to the advances on compact and ultrafast all-optical signal processing.
A kind of graphene-based perfect absorber which can generate low-threshold and high-extinction-ratio optical bistability in the near-IR band is proposed and simulated with numerical methods. The interaction between input light and monolayer graphene in the absorber can be greatly enhanced due to the perfect absorption. The large nonlinear coefficient of graphene and the strong light-graphene interaction contribute to the nonlinear response of the structure, leading to relatively low switching thresholds of less than 2.5 MW/cm2 for an absorber with a Q factor lower than 1000. Meanwhile, the extinction ratio of bistable states in the absorber reaches an ultrahigh value of 47.3 dB at 1545.3 nm. Moreover, the influence of changing the structural parameters on the bistable behaviors is discussed in detail, showing that the structure can tolerate structural parametric deviation to some extent. The proposed bistable structure with ultra-compact size, low thresholds, high extinction ratio, and ultrafast response time could be of great applications for fabricating high-performance all-optical-communication devices.
The authors study analytically and numerically the effect of a periodic perturbation in the index of refraction of a nonlinear optical medium. Using a one-dimensional model for monochromatic waves incident on the medium, they find that near resonance between the perturbation and the modulation of the electric field there can be a significant enhancement of optical bistability in the low intensity regime. In particular, they discuss in detail the case of the primary resonance, which is responsible for the most significant effects, and show how one can optimize the bistability curve for the implementation of an optical switch, based on the information provided by the resonance structure.