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Nanomaterials

Low-Threshold and High-Extinction-Ratio Optical Bistability within a Graphene-Based Perfect Absorber

Zhengzhuo Zhang, Qiaoge Sun, Yansong Fan, Zhihong Zhu, Jianfa Zhang, Xiaodong Yuan, Chucai Guo

Published Jan 18, 2023• 6 citations
Publisher

Abstract

A kind of graphene-based perfect absorber which can generate low-threshold and high-extinction-ratio optical bistability in the near-IR band is proposed and simulated with numerical methods. The interaction between input light and monolayer graphene in the absorber can be greatly enhanced due to the perfect absorption. The large nonlinear coefficient of graphene and the strong light-graphene interaction contribute to the nonlinear response of the structure, leading to relatively low switching thresholds of less than 2.5 MW/cm2 for an absorber with a Q factor lower than 1000. Meanwhile, the extinction ratio of bistable states in the absorber reaches an ultrahigh value of 47.3 dB at 1545.3 nm. Moreover, the influence of changing the structural parameters on the bistable behaviors is discussed in detail, showing that the structure can tolerate structural parametric deviation to some extent. The proposed bistable structure with ultra-compact size, low thresholds, high extinction ratio, and ultrafast response time could be of great applications for fabricating high-performance all-optical-communication devices.

DOI
10.3390/nano13030389

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A kind of graphene-based perfect absorber which can generate low-threshold and high-extinction-ratio optical bistability in the near-IR band is proposed and simulated with numerical methods. The interaction between input light and monolayer graphene in the absorber can be greatly enhanced due to the perfect absorption. The large nonlinear coefficient of graphene and the strong light-graphene interaction contribute to the nonlinear response of the structure, leading to relatively low switching thresholds of less than 2.5 MW/cm2 for an absorber with a Q factor lower than 1000. Meanwhile, the extinction ratio of bistable states in the absorber reaches an ultrahigh value of 47.3 dB at 1545.3 nm. Moreover, the influence of changing the structural parameters on the bistable behaviors is discussed in detail, showing that the structure can tolerate structural parametric deviation to some extent. The proposed bistable structure with ultra-compact size, low thresholds, high extinction ratio, and ultrafast response time could be of great applications for fabricating high-performance all-optical-communication devices.
A proposal on optical bistability at ultralow switching threshold and lower Fermi-level of graphene around 2 THz is implemented analytically through the proposed long-range surface plasmon resonance configuration by employing local field enhancement effects owing to the excitation of a graphene symmetric mode within graphene sheets. Reported threshold intensity for the optical bistability to date is 1.6 kW/cm2 within the terahertz region and 1.83 MW/cm2 at near-IR range. Whereas the proposed scheme explores the possibility of reducing this threshold down to 143.68 W/cm2, this technique proffers potential applications in nanoillumination, optical memory, and all-optical switching at an ultra-low threshold.
In this paper, we propose a modified Otto configuration to realize tunable and low-threshold optical bistability at terahertz frequencies by attaching multilayer graphene sheets to a nonlinear substrate interface. Our work demonstrates that the threshold of optical bistability can be markedly reduced (three orders of magnitude) by covering the nonlinear substrate with multilayer graphene sheets, due to strong local field enhancement with the excitation of surface plasmons. We present the influences of the Fermi energy of graphene, the incident angle, the thickness of air gap and the relaxation time of graphene on the hysteresis phenomenon and give a way to optimize the surface plasmon resonance, which will enable us to further lower the minimal power requirements for realizing optical bistability due to the strong interaction of light with graphene sheets. These results are promising for realization of terahertz optical switches, optical modulators and logical devices.
In nonlinear plasmonics, the switching threshold of optical bistability is limited by the weak nonlinear responses from the conventional Kerr dielectric media. Considering the giant nonlinear susceptibility of graphene, here we develop a nonlinear scattering model under the mean field approximation and study the bistable scattering in graphene-coated dielectric nanowires based on the semi-analytical solutions. We find that the switching intensities of bistable scattering can be smaller than 1 MW cm−2 at the working frequency. To further decrease the switching intensities, we show that the most important factor that restricts the bistable scattering is the relaxation time of graphene. Our work not only reveals some general characteristics of graphene-based bistable scattering, but also provides a guidance to further applications of optical bistability in the high speed all-optical signal processing.
We propose a modified Kretschmann-Raether configuration to realize the low threshold optical bistable devices at the terahertz frequencies. The metal layer is replaced by the dielectric sandwich structure with the insertion of graphene, and this configuration can support TM-polarization surface electromagnetic wave. The surface plasmon resonance is strongly dependent on the Fermi-level of graphene and the thickness of the sandwich structure. It is found that the switching-up and switching-down intensities required to observe the optical bistable behavior are lowered markedly due to the excitation of the graphene surface plasmons, thus making this configuration a prime candidate for experimental investigation at the terahertz range. And the switching threshold value can be further reduced by decreasing the Fermi-level or increasing the thickness of sandwich structure, hence providing a new way for realizing tunable optical bistable devices. Finally, the optical bistability at higher terahertz frequency and the influence of relaxation time under the actual experimental condition on Fermi-level are discussed.
Optical bistability has attracted much attention due to its enormous potential applications in all-optical operation and signal processing. However, the weak nonlinear responses typically require huge pump power to reach the threshold of the optical bistability, thus hindering the real applications. In this study, we propose an efficient optical bistable metamaterial, which is composed of multilayer Ga2O3-SiC-Ag metal-dielectric nanostructures. We not only use the epsilon-near-zero (ENZ) with SiC-Ag thin layers to enhance the substantial field, but also incorporate the SiC material to increase its significant optical nonlinear coefficient. In the structural design, the introduction of Ga2O3 layer facilitates the light field concentration, contributing to the further reduction in threshold power for optical bistability, and also conducing to the improvement of the physical and chemical stability of the device. The influences of the thickness and length of the ENZ layer on the optical bistability are systematically investigated by using the finite element method. The results demonstrate that optical bistability becomes more pronounced with the increase of the thickness and length of ENZ layer, exhibiting a bistability switching threshold as low as ~10–6 W/cm2 in the telecommunication band. Comparing with the previously reported optical bistability based on ENZ mechanism, the threshold shows a significant reduction by 9 orders of magnitude, demonstrating great application potential in the fields of semiconductor devices and photonic integrated circuits.
With the experimental corroboration employing a transfer matrix method, an analytical observation of optical bistability using long-range surface plasmon resonance (LRSPR) through the external magnetic field is presented for a very low threshold value. The proposed analytical method has been verified with the reported experimental data provided by Liu et al. [ Curr. Appl. Phys. 29 , 66 ( 2021 ) 1567-1739 10.1016/j.cap.2021.06.003 ]. Now theoretical analysis is further extended in the proposed multilayered structure comprising an InAs layer sandwiched between two graphene layers, whose electromagnetic response at 2 THz can be regulated by employing a magnetic field and may tune the optical bistability without modifying the geometry or the characteristics of the structure. The observed threshold intensity for the switch-up is 6.6615×104W/cm2 at 0.001 T; thus, this analytical approach is able to achieve 2 orders lower threshold for magnetically tunable upswitching of the optical bistable process. This suggested magnetically adjustable optical bistable arrangement gives a possibility for the comprehension of optical logic gates, optic memory, opto-transistors, and switches at a low switching threshold due to extraordinary features of the composite layers due to local field amplification of the graphene layer.