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IEEE Transactions on Applied Superconductivity

Silicon Membrane-Based Waveguide-to-Superconducting CPW Transitions at 2 mm Band

Akihiro Masukura, Wenlei Shan, Shohei Ezaki, Takafumi Kojima, Taku Nakajima, Akira Mizuno

Published Apr 14, 2023• 3 citations
Publisher

Abstract

In millimeter and submillimeter superconducting receivers, which are widely applied in radio astronomical observations, waveguide-to-planar transmission line transitions are key components connecting waveguide medium and the superconducting planar circuit. Although conventional quartz substrate-based transitions perform well for single-pixel receivers, these waveguide probes are not suitable for imaging arrays because their narrow chip space prohibits a higher degree integration of superconducting circuits. For multi-beam receiving applications, we have demonstrated fully functional monolithic microwave integrated circuit superconductor-insulator-superconductor (SIS) mixers with on-chip silicon membrane-based transitions at 2 mm wavelengths. In the present work, we aim to assess the transition as a stand-alone component and investigate its bandwidth potential. We designed a full-height waveguide transition which covers 125–211 GHz, more than 50% fractional bandwidth. The experimental study was carried out by performing cryogenic measurements of the transmission of a back-to-back probe pair with a mm-wave network analyzer. The measured transmission is well consistent with the simulated one in the frequency range of 125–170 GHz, which is covered by the network analyzer in this measurement.

DOI
10.1109/tasc.2023.3267331

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In millimeter and submillimeter superconducting receivers, which are widely applied in radio astronomical observations, waveguide-to-planar transmission line transitions are key components connecting waveguide medium and the superconducting planar circuit. Although conventional quartz substrate-based transitions perform well for single-pixel receivers, these waveguide probes are not suitable for imaging arrays because their narrow chip space prohibits a higher degree integration of superconducting circuits. For multi-beam receiving applications, we have demonstrated fully functional monolithic microwave integrated circuit superconductor-insulator-superconductor (SIS) mixers with on-chip silicon membrane-based transitions at 2 mm wavelengths. In the present work, we aim to assess the transition as a stand-alone component and investigate its bandwidth potential. We designed a full-height waveguide transition which covers 125–211 GHz, more than 50% fractional bandwidth. The experimental study was carried out by performing cryogenic measurements of the transmission of a back-to-back probe pair with a mm-wave network analyzer. The measured transmission is well consistent with the simulated one in the frequency range of 125–170 GHz, which is covered by the network analyzer in this measurement.
Superconductor-Insulator-Superconductor (SIS) tunnel junction mixers are now commonly used in as- tronomical receivers at (sub)millimeter wavelengths because of their superb sensitivity, high dynamic range and stability of operation. Niobium SIS mixers operating at frequencies well below the super- conducting gap (∼680 GHz) have already achieved quantum limited sensitivity. Therefore to further enhance the receiver sensitivity, increasing the Intermediate Frequency (IF) bandwidth of SIS mixers has became crucial. This thesis focuses on the theoretical modeling, design and experimental verifi- cation of Nb SIS mixers operating around 230 GHz with a wide IF bandwidth of 1–15 GHz. These mixers were designed for a single baseline heterodyne interferometer (GUBBINS), which is being built to observe the Sunyaev-Zel’dovich effect in the Cosmic Microwave Background. The combination of wide IF bandwidth SIS mixers and complex analogue correlators will allow GUBBINS to feature high surface brightness sensitivity, that helps to distinguish the weak SZ effect from the background noise. The SIS mixer detector system was assembled inside the GUBBINS cryostat together with the IF electronics and RF/LO optical systems. Low noise temperatures of around 71 K were then measured in the GUBBINS system. The Nb SIS mixer we have developed uses a unilateral finline and fully integrated planar circuits deposited on a silicon substrate, to couple the electromagnetic radiation from the waveguide into the SIS junction. The finline mixer allows a broad-band RF coupling, an easy integration of the on-chip planar circuits and an easy-to-fabricate mixer block. To achieve a wide IF bandwidth, the output impedance of the SIS mixer was well matched to the input impedance of the amplifier by a multi-stage microstrip circuit. Additionally, the planar circuit of the SIS mixer was also designed to have a small lumped inductance and capacitance. The SIS mixer chip was extensively simulated by rigorous electromagnetic software (HFSS) and the S-parameter was exported to a quantum mixing package SuperMix to produce a full-wave model of the mixer. Experimental testing yielded a best noise temperature of 50 K with an average noise temperature of 75 K over an RF bandwidth of 160 GHz– 260 GHz. We have performed thorough experimental and computational investigation of the IF system in particular the constraints on the bandwidth caused by the lumped element capacitance of the mixer chip and the matching of the output impedance of the mixer to the IF amplifier. Our conclusion is that a bandwidth of 1–15 GHz could be achieved using our mixer design, subject to the performance of the amplifier. Finally, a variable temperature load system was successfully developed and tested inside the cryostat, to avoid the losses from the room-temperature optics. We have showed that the noise temperature of the SIS detector could be reduced by as much as 15 K by testing the mixer using a variable temperature load inside the cryostat.
Cosmic dust, cold matter and many other objects at far space have many spectral lines at the THz frequency range, leading to a rich information spectrum for astronomical observations. Ordinarily, these detected sub-mm signals from space are weak, and consequently very sensitive detectors are required to reduce the minimal time of the measurements with the desired accuracy. The main focus of this work is the design and development of superconducting high-frequency waveguide receivers at 211-275 GHz, 600-720 GHz and 780-950 GHz frequency ranges, in addition to superconducting planar integrated circuits matched with a planar Flux-Flow-Oscillator. This work is bridging the calculation methods applied for the design on one hand and the development of experimental instruments on the other.
A 230 GHz Superconductor-Insulator-Superconductor (SIS) mixer is designed focusing on a good performance in the IF frequency range of 4–16 GHz over the RF band from 211 to 275 GHz. A transition from a full-height waveguide to a probe is designed using HFSS. The mixer chips containing SIS junctions are designed and optimized to have low total capacitance of circuits to ensure wide IF bandwidth. The chip fabrication was done in Academia Sinica Institute of Astronomy and Astrophysics (ASIAA), where the masks were conducted by TSMC. A lab test was conducted on a superconducting mixer with a cryogenic dewar. The gap voltage in the I-V curve of the mixer is approximately 8 mV, and there is a clear nonlinearity around a current of 110 μA, which matches well with the simulation. The receiver noise temperature is approximately 60 K including optical losses and the noise from the RF input.
Abstract We developed a low-noise, compact, balanced superconductor–insulator–superconductor (SIS) mixer, operating in the 787–950 GHz radio frequency range. A waveguide mixer block was designed to integrate all the key components, such as a radio frequency (RF) 90° hybrid coupler, two identical SIS mixer chips, bias-tees, and an intermediate frequency power-combiner. The RF waveguide 90° hybrid coupler consists of branch lines with wide slots optimized by numerical simulation, for ease of fabrication. The balanced mixer was installed into a cartridge type receiver, originally developed for the Atacama Large Millimeter/submillimeter Array Band 10 (787–950 GHz). The receiver demonstrated double sideband noise temperatures of approximately 200 K for most of the band, without any correction for loss in front of the receiver. The local oscillator noise rejection ratio was estimated to be more than 15 dB within the measured frequency range.
The concept of the fully Superconducting Integrated Receiver (SIR) has been developed and experimentally demonstrated. The single-chip submm wave receiver includes a planar antenna integrated with a SIS mixer, which is pumped by an internal superconducting Flux Flow Oscillator (FFO) as local oscillator (LO). A DSB noise temperature below 100 K has been demonstrated around 500 GHz. Heterodyne measurements have shown that the instantaneous bandwidth of the receiver is 15 – 20 % which meets the requirements of practical applications. The double-dipole lens-antenna SIS mixer has an antenna beam ≈ f/9 with sidelobes below- 16 dB. This enables an efficient coupling of the SIR to the telescope antenna. With the FFO phase locked in the frequency range 270- 440 GHz a linewidth as low as 1 Hz has been measured relative to a reference oscillator. A compact array of 9 SIRs has been developed and tested. Each pixel contains an internally pumped receiver chip, which is mounted on the back of an elliptical silicon lens. A noise temperature of about 150 K has been measured at 500 GHz using the internal FFO for the imaging array of Integrated Receivers.
All-refractory material superconducting millimeter-wave oscillators have been designed and investigated experimentally with different superconductor-insulator-superconductor (SIS) mixers integrated on the same chip. Tested structures include a flux-flow oscillator (FFO) based on a long Josephson junction, a coupling section, and an SIS detector with tuned out junction capacitance. Coupling sections were designed as multistep microstrip quarter-wave impedance transformers. All junctions have been fabricated on the basis of a high-quality trilayer Nb-AlO/sub x/-Nb process. Microwave oscillations in the frequency range 75-500 GHz have been detected experimentally. The level of delivered power was estimated from the pumped I-V curve of the strongly coupled single junction detector. Coupled power levels higher than 0.1 mu W at 256 GHz were achieved. A spectral linewidth of the FFO of less than 1 MHz has been estimated experimentally. The first attempt to create an integrated receiver based on an FFO and an SIS array mixer integrated on the same chip was made in the 2-mm wavelength band.>