Spectral Hole-Burning and Related Spectroscopies: Science and Applications

Homogeneous Width of Eu3+ in Silicate Glass Fiber Measured by Accumulated Photon Echoes

Ryuzi Yano, Naoshi Uesugi

Published Jan 1, 1994• 0 citations

Abstract

The optical homogeneous widths of ions or molecules in glasses exhibit an anomalous behavior in both their magnitude and temperature dependence when compared to the same species in crystals. Many studies of the homogeneous widths of molecules have advanced our knowledge of properties such as low-temperature dephasing and spectral diffusion. However, the mechanisms of the homogeneous widths of ions in glasses are still not fully understood.

DOI: 10.1364/shbs.1994.wd7

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Temperature dependence of the homogeneous width of Eu3+ spectral lines in silicate glass measured by accumulated photon echoes

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Spectral Hole-Burning and Related Spectroscopies: Science and Applications

Homogeneous Width of Eu3+ in Silicate Glass Fiber Measured by Accumulated Photon Echoes

Ryuzi Yano, Naoshi Uesugi

Published Jan 1, 1994• 0 citations

Publisher

Abstract

DOI: 10.1364/shbs.1994.wd7

Related papers

Temperature dependence of the homogeneous width of Eu3+ spectral lines in silicate glass measured by accumulated photon echoes

Ryuzi Yano, Masaharu Mitsunaga, Naoshi Uesugi +1 more

The temperature-dependent homogeneous width of the $^{5}$ ${\mathit{D}}_{0\mathrm{\ensuremath{-}}}^{7}$ ${\mathit{F}}_{0}$ transition of ${\mathrm{Eu}}^{3+}$ in a pure silicate glass fiber has been measured by accumulated photon echoes between 1.6 and 44 K. The temperature dependence of the homogeneous width shows a crossover from T-linear (T7 K) to ${\mathit{T}}^{2}$ (T>7 K). The whole temperature dependence of the homogeneous width between 1.6 and 44 K can be explained by the configurational changes of the glass which is modeled by two-level systems (TLS's) and a Raman process involving low-frequency vibrational modes of the silicate glass (the rotations of ${\mathrm{SiO}}_{4}$ tetrahedra). The T-linear temperature dependence is attributed to the TLS process. The anomalous ${\mathit{T}}^{2}$ dependence down to 10 K cannot be explained by only one process, but can be explained by the contributions of both the TLS process and the Raman process. Above 40 K, the Raman process becomes the dominant dephasing mechanism.The temperature-dependent homogeneous width of the $^{5}$${\mathit{D}}_{0\mathrm{\ensuremath{-}}}^{7}$${\mathit{F}}_{0}$ transition of ${\mathrm{Eu}}^{3+}$ in a pure silicate glass fiber has been measured by accumulated photon echoes between 1.6 and 44 K. The temperature dependence of the homogeneous width shows a crossover from T-linear (T7 K) to ${\mathit{T}}^{2}$ (T>7 K). The whole temperature dependence of the homogeneous width between 1.6 and 44 K can be explained by the configurational changes of the glass which is modeled by two-level systems (TLS's) and a Raman process involving low-frequency vibrational modes of the silicate glass (the rotations of ${\mathrm{SiO}}_{4}$ tetrahedra). The T-linear temperature dependence is attributed to the TLS process. The anomalous ${\mathit{T}}^{2}$ dependence down to 10 K cannot be explained by only one process, but can be explained by the contributions of both the TLS process and the Raman process. Above 40 K, the Raman process becomes the dominant dephasing mechanism.

Physical review. B, Condensed matterOct 1, 199423 citations

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Spectral Hole-Burning and Related Spectroscopies: Science and ApplicationsJan 1, 19940 citations

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Ryuzi Yano, Naoshi Uesugi

Measurements of the homogeneous width of the $^{4}$ ${\mathrm{G}}_{5\mathrm{/}2}$ , $^{2}$ ${\mathrm{G}}_{7\mathrm{/}2}$ ${\mathrm{\ensuremath{-}}}^{4}$ ${\mathrm{I}}_{9\mathrm{/}2}$ transition of ${\mathrm{Nd}}^{3+}$ in a silicate glass fiber at low temperatures by the technique of accumulated photon echoes show that the dephasing processes are one-phonon processes between the Stark levels of ${\mathrm{Nd}}^{3+}$ . These dephasing processes differ from the commonly observed processes of rare-earth ion-doped glasses: the local-configurational-change-induced dephasing process and the Raman process with low-frequency modes. The densely distributed Stark levels of the $^{4}$ ${\mathrm{G}}_{5\mathrm{/}2}$ and $^{2}$ ${\mathrm{G}}_{7\mathrm{/}2}$ states are responsible for one-phonon processes. The transition-wavelength dependences of the homogeneous widths ${\mathrm{\ensuremath{\Gamma}}}_{\mathrm{h}}$ (4.2 K) and ${\mathrm{\ensuremath{\Gamma}}}_{\mathrm{h}}$ (T\ensuremath{\rightarrow}0) are explained by using the one-phonon process model.Measurements of the homogeneous width of the $^{4}$ ${\mathrm{G}}_{5\mathrm{/}2}$ , $^{2}$ ${\mathrm{G}}_{7\mathrm{/}2}$ ${\mathrm{\ensuremath{-}}}^{4}$ ${\mathrm{I}}_{9\mathrm{/}2}$ transition of ${\mathrm{Nd}}^{3+}$ in a silicate glass fiber at low temperatures by the technique of accumulated photon echoes show that the dephasing processes are one-phonon processes between the Stark levels of ${\mathrm{Nd}}^{3+}$ . These dephasing processes differ from the commonly observed processes of rare-earth ion-doped glasses: the local-configurational-change-induced dephasing process and the Raman process with low-frequency modes. The densely distributed Stark levels of the $^{4}$ ${\mathrm{G}}_{5\mathrm{/}2}$ and $^{2}$ ${\mathrm{G}}_{7\mathrm{/}2}$ states are responsible for one-phonon processes. The transition-wavelength dependences of the homogeneous widths ${\mathrm{\ensuremath{\Gamma}}}_{\mathrm{h}}$ (4.2 K) and ${\mathrm{\ensuremath{\Gamma}}}_{\mathrm{h}}$ (T\ensuremath{\rightarrow}0) are explained by using the one-phonon process model.

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Transition frequency and temperature dependences of homogeneous width of Nd3+ ion in silicate glass

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Ultra-narrow homogeneous linewidths of erbium-doped silica glass fibers at millikelvin temperatures: magnetic field and temperature dependence

Farhad Rasekh, Nasser Gohari Kamel, Mahdi Bornadel +4 more

Erbium-doped solids are promising candidates for fiber-based quantum networks due to their emission wavelength, which aligns with the telecom band over which optical fibers exhibit minimal loss. Among these, erbium-doped silica fiber (EDF) stands out for its availability, ease of use, and seamless integration with existing fiber-optic infrastructure. In this work, using the two-pulse photon-echo (2PPE) technique, we measured the homogeneous linewidth of the 4 I 13/2 ↔ 4 I 15/2 optical transition under varying magnetic fields and temperatures. We observed an effective homogeneous linewidth of approximately 8 kHz at ∼7mK at an optimal magnetic field of 0.09 T, representing over two orders of magnitude improvement compared to earlier reports measured at T ≈700mK. We also present a comprehensive model for the combined magnetic field and temperature dependency of the effective homogeneous linewidth. Additionally, we employed three-pulse photon-echo (3PPE) measurements to investigate spectral diffusion and decoherence processes and conclude that Two-Level System (TLS) effects are significantly suppressed at sufficiently low temperatures, below ∼100mK.Erbium-doped solids are promising candidates for fiber-based quantum networks due to their emission wavelength, which aligns with the telecom band over which optical fibers exhibit minimal loss. Among these, erbium-doped silica fiber (EDF) stands out for its availability, ease of use, and seamless integration with existing fiber-optic infrastructure. In this work, using the two-pulse photon-echo (2PPE) technique, we measured the homogeneous linewidth of the 4 I 13/2 ↔ 4 I 15/2 optical transition under varying magnetic fields and temperatures. We observed an effective homogeneous linewidth of approximately 8 kHz at ∼7mK at an optimal magnetic field of 0.09 T, representing over two orders of magnitude improvement compared to earlier reports measured at T ≈700mK. We also present a comprehensive model for the combined magnetic field and temperature dependency of the effective homogeneous linewidth. Additionally, we employed three-pulse photon-echo (3PPE) measurements to investigate spectral diffusion and decoherence processes and conclude that Two-Level System (TLS) effects are significantly suppressed at sufficiently low temperatures, below ∼100mK.

arXiv:2509.23400Optica QuantumFeb 3, 20261 citation

The temperature-dependent homogeneous width of the

^{5}

${\mathit{D}}_{0\mathrm{\ensuremath{-}}}^{7}$

{\mathit{F}}_{0}

transition of

{\mathrm{Eu}}^{3+}

in a pure silicate glass fiber has been measured by accumulated photon echoes between 1.6 and 44 K. The temperature dependence of the homogeneous width shows a crossover from T-linear (T7 K) to

{\mathit{T}}^{2}

(T>7 K). The whole temperature dependence of the homogeneous width between 1.6 and 44 K can be explained by the configurational changes of the glass which is modeled by two-level systems (TLS's) and a Raman process involving low-frequency vibrational modes of the silicate glass (the rotations of

{\mathrm{SiO}}_{4}

tetrahedra). The T-linear temperature dependence is attributed to the TLS process. The anomalous

{\mathit{T}}^{2}

dependence down to 10 K cannot be explained by only one process, but can be explained by the contributions of both the TLS process and the Raman process. Above 40 K, the Raman process becomes the dominant dephasing mechanism.

Measurements of the homogeneous width of the

^{4}

{\mathrm{G}}_{5\mathrm{/}2}

^{2}

{\mathrm{G}}_{7\mathrm{/}2}

${\mathrm{\ensuremath{-}}}^{4}$

{\mathrm{I}}_{9\mathrm{/}2}

transition of

{\mathrm{Nd}}^{3+}

in a silicate glass fiber at low temperatures by the technique of accumulated photon echoes show that the dephasing processes are one-phonon processes between the Stark levels of

{\mathrm{Nd}}^{3+}

. These dephasing processes differ from the commonly observed processes of rare-earth ion-doped glasses: the local-configurational-change-induced dephasing process and the Raman process with low-frequency modes. The densely distributed Stark levels of the

^{4}

{\mathrm{G}}_{5\mathrm{/}2}

and

^{2}

{\mathrm{G}}_{7\mathrm{/}2}

states are responsible for one-phonon processes. The transition-wavelength dependences of the homogeneous widths ${\mathrm{\ensuremath{\Gamma}}}_{\mathrm{h}}$ (4.2 K) and ${\mathrm{\ensuremath{\Gamma}}}_{\mathrm{h}}$ (T\ensuremath{\rightarrow}0) are explained by using the one-phonon process model.