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Spectral Hole-Burning and Related Spectroscopies: Science and Applications

High Density Frequency Domain Data Storage using a Stabilized Dye Laser

Miao Zhu, C. Michael Jefferson

Published Jan 1, 1994• 0 citations

Abstract

There has been a great deal of interest in the use of rare earth doped materials such as Eu3 +: Y 2 SiO 5 for ultra-high density data storage using time domain techniques 1,2,3,4. These materials can exhibit T2 times as long as 800 μsec or more3,5 with corresponding projected linewidths of only several hundred Hertz. Since the typical linewidth of lasers used to investigate these materials (e.g. dye lasers) is of the order of 1 to 5 MHz, detailed studies of phenomena which can exploit the long coherence time of the excited state are difficult. Studies of phase modulation, continuous correlation, population gratings, free induction decay and so forth are greatly impacted by the laser linewidth. In addition, the actual linewidth of single persistent spectral holes has never been directly measured in these materials.

DOI: 10.1364/shbs.1994.wc3

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Conference on Lasers and Electro-Optics•Jan 1, 1983•1 citation

There has been a great deal of interest in the use of rare earth doped materials such as Eu3 +: Y 2 SiO 5 for ultra-high density data storage using time domain techniques 1,2,3,4. These materials can exhibit T2 times as long as 800 μsec or more3,5 with corresponding projected linewidths of only several hundred Hertz. Since the typical linewidth of lasers used to investigate these materials (e.g. dye lasers) is of the order of 1 to 5 MHz, detailed studies of phenomena which can exploit the long coherence time of the excited state are difficult. Studies of phase modulation, continuous correlation, population gratings, free induction decay and so forth are greatly impacted by the laser linewidth. In addition, the actual linewidth of single persistent spectral holes has never been directly measured in these materials.

This work achieved several substantial results. A highly stabilized laser system suitable for many detailed studies of data storage phenomena was constructed and made to work. This laser was essential for the investigations which followed. Using the stabilized laser, a real time correlator was demonstrated, which correctly identified all occurances of a test sequence imbedded in random data. This correlator is the first demonstration of the use of phase modulation to store and retreive data in time domain hole-burning. In the frequency domain, narrow holes were burned and scanned, and information storage at a spectral density exceeding 50,000 bits per spot was demonstrated, with perfect recall and excellent signal to noise. We have also made the first demonstration of a novel technique for storing and retreiving phase modulated data streams with time domain spectral hole-burning. This demonstration has been disclosed for patent purposes.

Spectral hole burning material parameters that impact optical memory architecture and performance are investigated. Optical power budget analysis for the data storage process reveals that although narrow homogeneous linewidth can confer high data density, it does not optimally support high data rates. Trading narrow linewidth for higher oscillator strength would be desirable, if attainable. Experimental measurement of oscillator strengths, quantum yield into alternative hyperfine ground state levels, and persistence of the hyperfine level populations in Eu3+:Y2SiO5 and Pr3+:Y2SiO5 are presented and discussed. Quantum yield measurements of less than 25% indicate that spin projections are strongly preserved during excitation and relaxation processes. The hole depth consequently attainable from single π-pulse illumination requires trade-offs in memory system design.

One very exciting application of laser spectroscopy would be to use the high-resolution capabilities of today’s lasers and the phenomenon of persistent spectral hole-burning to form a frequency domain optical storage system.1 In such a system, bits of information would be stored by locally modifying (in the frequency domain) the shape of an inhomogeneously broadened absorption line of an absorber in a solid at low temperatures. Because typical homogeneous widths are 1000X (or more) narrower than typical inhomogeneous widths, as many as 1000 bits could be written in one diffraction-limited 1-μm spot In a sample, yielding the impressive storage density of 1011 bits/cm2.