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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Rare-earth-based spectral memories: material implications

Kent B. Hill, Alan E. Craig

Published Jun 30, 2003• 0 citations
Publisher

Abstract

Spectral hole burning material parameters that impact optical memory architecture and performance are investigated. Optical power budget analysis for the data storage process reveals that although narrow homogeneous linewidth can confer high data density, it does not optimally support high data rates. Trading narrow linewidth for higher oscillator strength would be desirable, if attainable. Experimental measurement of oscillator strengths, quantum yield into alternative hyperfine ground state levels, and persistence of the hyperfine level populations in Eu3+:Y2SiO5 and Pr3+:Y2SiO5 are presented and discussed. Quantum yield measurements of less than 25% indicate that spin projections are strongly preserved during excitation and relaxation processes. The hole depth consequently attainable from single π-pulse illumination requires trade-offs in memory system design.

DOI
10.1117/12.485792

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Spectral hole burning material parameters that impact optical memory architecture and performance are investigated. Optical power budget analysis for the data storage process reveals that although narrow homogeneous linewidth can confer high data density, it does not optimally support high data rates. Trading narrow linewidth for higher oscillator strength would be desirable, if attainable. Experimental measurement of oscillator strengths, quantum yield into alternative hyperfine ground state levels, and persistence of the hyperfine level populations in Eu3+:Y2SiO5 and Pr3+:Y2SiO5 are presented and discussed. Quantum yield measurements of less than 25% indicate that spin projections are strongly preserved during excitation and relaxation processes. The hole depth consequently attainable from single π-pulse illumination requires trade-offs in memory system design.
This thesis describes experiments aimed at developing a key component in applications such as quantum networks and long-distance quantum communication systems: quantum memories. Quantum memories for light using photon-echo and coherent rephrasing techniques have been developed. The work is carried out on rare-earth-ion-doped inorganic crystals. Several properties are associated with these crystals such as long coherence times and long-lived ground state sublevels that are particularly interesting in connection applications in the area of quantum information science. It is demonstrated the preparation of optical inhomogeneous absorption profiles such that the light only interacts with a specific transition at a selected frequency. Narrow absorbing structures with widths of <100 kHz have been prepared with no absorption in the surrounding spectral interval. Most of the experiments were carried out using Pr3+:Y2SiO5. However, in our search for suitable a Λ-system in the material under consideration, we also performed spectral hole-burning spectroscopy in Nd:Y2SiVO4. As part of the search for host materials for Pr, Pr:La2(WO4)3 crystal was characterized using a variety of methods, such as, hole burning and photon-echoes. Electromagnetically induced transparency was also observed in this crystal. The most important criteria for evaluating quantum memory performance and the most important physical requirements are discussed. After investigating the standard photon echo techniques and controlled reversible inhomogeneous broadening (CRIB) for quantum state storage, we considered an efficient multimode quantum memory protocol; the atomic frequency comb (AFC) protocol. Combs with peaks of widths 100-300 kHz and an optical depth of~ 10 were created by optical pumping inside an emptied region of the inhomogeneous profile of Pr3+:Y2SiO5, allowing us to improve the efficiency of light storage. Light storage combining a photon-echo technique based on an AFC and spin-wave storage have been demonstrated, and an experimental AFC scheme for the storage of weak coherent light pulses in Pr3+:Y2SiO5 is presented. Finally, we have investigated superradiance and slow light effects. Both these effects occur in the high optical depth regime and can influence the memory performance. Under certain conditions superradiance results in the immediate re-emission of the stored light in a single burst of coherent radiation, and inside spectrally structured materials, slow light effects may result when storage is performed.
The optical spectroscopy and dynamics of three materials; Eu^3+:Y2SiO5, Pr^3+:Y2SiO5, and Tm^3+:Y2SiO5 that are of interest for application in persistent spectral holeburning optical memory and signal processing devices were investigated using linear and nonlinear spectroscopic techniques.Two-pulse photon echoes have been used to measure the homogeneous linewidths.The effects of instantaneous spectral diffusion were systematically studied to allow accurate determination of the optical resonance widths, and external magnetic fields were applied to characterize the effects of fluctuating nuclear spins of the host lattice on dephasing of the dopant ion.The 7F0 → 5D0 transition of 0.1% Eu^3+ in the two crystallographic sites of Y2SiO5 was studied using photon echoes.Using this material, we succeeded in measuring the narrowest optical resonance in a solid by shielding the crystal from stray electromagnetic fields and using sufficiently low laser power to minimize contributions from instantaneous diffusion.The homogeneous linewidths measured in a magnetic field of 100 G are 122 Hz (site 1) and 167 Hz (site 2).These widths are dominated by population decay, but up to 20 Hz is attributed to 89Y spin fluctuations which have been reduced by the applied magnetic field.Similar studies were performed to determine the contributions to the homogeneous linewidth of the 3H4(1) → 1D2(1) transition for both sites of 0.02% Pr^3+ in Y2SiO5.Linewidths of 2.1 kHz (site 1) and 0.85 kHz (site 2) were obtained with an applied magnetic field of 77 G.A significant contribution of 89Y nuclear spin fluctuations to the zero-field homogeneous linewidth was found.Optically detected nuclear magnetic resonance measurements determined the hyperfine structure of the 3H4 ground state for each site, and photon echo nuclear double resonance was used to determine the hyperfine levels of the lowest component of the 1D2 manifold. 3) 2.1? Ec,2S
Abstract : Optical materials for spectral hole burning and coherent transient applications were designed and evaluated, emphasizing relevance to devices including high performance memory, signal processing, high speed holographic recording and analysis, and optical switches, routers, and buffers. The ultimate limits on material performance set by atomic mechanisms were determined. The developed materials contained Eu3+, Pr3+, Tm3+, Tb3+, or Er3+ active ions in various oxide hosts. The first report was made of an Er3+ material for hole burning applications in 1.5 micron optical communications bands. Eight Er3+ materials for applications at 1.5 microns in optical routers and buffer memories were designed and characterized. A correlator' signal processing capability was demonstrated, and the first report was made of operation of a 1.5 micron packet header decoder for all-optimized optical packet switching in optical communications along optical fibers at 1531 nm. Eu3+:Y2SiO5 was optimized for use in 100 GByte ODRAM optical memory devices, considering Eu3+ concentration and temperature. Eight Tm3+ compounds for signal processing applications, such as true time delays for phased-array radar, at diode laser wavelengths near 795 nm were designed and characterized. Eight Tb3+ compounds for photon gated spectral hole burning were designed and characterized, and gated hole burning was observed in Tb3+:YAIO3.
There has been a great deal of interest in the use of rare earth doped materials such as Eu3 +: Y 2 SiO 5 for ultra-high density data storage using time domain techniques 1,2,3,4. These materials can exhibit T2 times as long as 800 μsec or more3,5 with corresponding projected linewidths of only several hundred Hertz. Since the typical linewidth of lasers used to investigate these materials (e.g. dye lasers) is of the order of 1 to 5 MHz, detailed studies of phenomena which can exploit the long coherence time of the excited state are difficult. Studies of phase modulation, continuous correlation, population gratings, free induction decay and so forth are greatly impacted by the laser linewidth. In addition, the actual linewidth of single persistent spectral holes has never been directly measured in these materials.
Rare-earth emitters in solids are well suited for implementing efficient, long-lived quantum memory coupled to integrated photonics for scalable quantum technologies. They are typically introduced as dopants in a solid-state host, but this introduces disorder and limits the available density of emitters. Stoichiometric materials can offer high densities with narrow optical linewidths. The regular spacing of emitters also opens possibilities for quantum information processing and collective effects. Here, we show narrow optical linewidths in a layered stoichiometric crystalline material, NaEu(IO_{3})_{4}. We observed an inhomogeneous linewidth of 2.2(1) GHz and a homogeneous linewidth of 120(4) kHz. Using spectral hole-burning techniques, we observe a hyperfine spin lifetime of 1.9(4) s. Furthermore, we demonstrate an atomic frequency comb delay of up to 800 ns.