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Spectral Hole-Burning and Related Spectroscopies: Science and Applications

Electro - Optical, Multi-Stable Switches Based on Persistent Spectral Holes

David M. Hanson

Published Jan 1, 1991• 0 citations
Publisher

Abstract

Photochemical or photophysical transformations induced by highly monochromatic laser radiation can drastically reduce the concentration of molecules absorbing at a particular wavelength within an inhomogeneously broadened absorption band. These spectral holes can be broadened, removed, shifted or split by the application of an external electric field under appropriate conditions. This property provides a nonlinear response in sample transmission, absorption, or diffraction and can be coupled with feedback to produce novel electro-optical devices. These devices include electrically activated, frequency selective, monostable, bistable, or multistable switches.

DOI
10.1364/pshb.1991.fe4

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Photochemical or photophysical transformations induced by highly monochromatic laser radiation can drastically reduce the concentration of molecules absorbing at a particular wavelength within an inhomogeneously broadened absorption band. These spectral holes can be broadened, removed, shifted or split by the application of an external electric field under appropriate conditions. This property provides a nonlinear response in sample transmission, absorption, or diffraction and can be coupled with feedback to produce novel electro-optical devices. These devices include electrically activated, frequency selective, monostable, bistable, or multistable switches.
One very exciting application of laser spectroscopy would be to use the high-resolution capabilities of today’s lasers and the phenomenon of persistent spectral hole-burning to form a frequency domain optical storage system.1 In such a system, bits of information would be stored by locally modifying (in the frequency domain) the shape of an inhomogeneously broadened absorption line of an absorber in a solid at low temperatures. Because typical homogeneous widths are 1000X (or more) narrower than typical inhomogeneous widths, as many as 1000 bits could be written in one diffraction-limited 1-μm spot In a sample, yielding the impressive storage density of 1011 bits/cm2.
We present a review of optical bistability in active and passive optoelectronic devices, with particular reference to switching speeds and powers. The large resonant nonlinearities available near the bandgaps of semiconductors may be utilized to develop bistable devices operating at low powers and high speeds. Passive devices are driven by external optical sources and include nonlinear etalons, nonlinear interfaces, self-focusing configurations and electro-optic modulators with electrical feedback. Active devices include injection lasers and superluminescent amplifiers. Potential advantages of active devices include speed, gain, sensitivity and the ability to drive other devices, but complexity and high power dissipation may limit their use in applications requiring high density.