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Topical Meeting on Optical Bistability (OB)

Research Works on Optical Bistability in China

Chunfei Li

Published Jan 1, 1988• 0 citations

Abstract

The first optical bistable device in China has been demonstrated by Chun-fei Li in Harbin, 1979. It is a hybrid device with nonlinear feedback. Since then his research group began to study optical bistability and its related subjects until now. In the early works they performed several new types of the hybrid OBD using LiNbO3 crystal. They systematically studied static and dynamic stabilities in OB and successfuly demonstrated bifurcations and chaos using a hybrid device with delayed feedback. From 1984 to 1986 they concentrated on narrow gap semiconductor OBD, and obtained dispersive and absorptive combined OB in InSb and optical ns pulse reshape effects using a HgCdTe etalon. They have also observed OB using liquid crystal nonlinear coupling waveguid and OB in liquid suspension of gold particles. They have used dye-filled etalons and light emitting diode hybrid OBD to demonstrated verious optical logics. Recently they have obtained a optical full adder with two ZnS interference filter OBDs.

DOI: 10.1364/obi.1988.wb.4

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The first optical bistable device in China has been demonstrated by Chun-fei Li in Harbin, 1979. It is a hybrid device with nonlinear feedback. Since then his research group began to study optical bistability and its related subjects until now. In the early works they performed several new types of the hybrid OBD using LiNbO3 crystal. They systematically studied static and dynamic stabilities in OB and successfuly demonstrated bifurcations and chaos using a hybrid device with delayed feedback. From 1984 to 1986 they concentrated on narrow gap semiconductor OBD, and obtained dispersive and absorptive combined OB in InSb and optical ns pulse reshape effects using a HgCdTe etalon. They have also observed OB using liquid crystal nonlinear coupling waveguid and OB in liquid suspension of gold particles. They have used dye-filled etalons and light emitting diode hybrid OBD to demonstrated verious optical logics. Recently they have obtained a optical full adder with two ZnS interference filter OBDs.

In this paper we present the basic principles of optical bistability and summarize the current advances in semiconductor optical switching, with emphasis on recent results in GaAs, CuCI, InAs, InSb, CdS, ZnS, and ZnSe etalons. These devices have great potential for applications involving optical signal processing and computing. As an example, we discuss the use of arrays of bistable devices for parallel optical processing and for addressable spatial light modulators. The use of nonlinear etalons as optical gates is also illustrated. To date, GaAs devices have shown the most favorable characteristics for practical applications. They operate at room temperature with a few milliwatts of power using a laser diode as the only light source. Quasi-cw operation and optical fiber signal regeneration have also been demonstrated. A GaAs NOR gate operates in 1 ps with <3 pJ incident energy; this, of course, implies a 1 ps switch-on time for a bistable etalon.

Some results of probing to the common properties, including bistability, transient behavior, and instability of the excitonic optical nonlinear dynamic systems, such as interaction of light field with carrier in semiconductor, or anharmonic vibration of lattice in ionic crystal, are presented. Since the excitonic optical bistability (EOB) was found, it has garnered much attention for its advantage in properties and application prospects. Some models have been proposed for different kinds of OB. However, so far as we know, there has been relatively less concern given to the common dynamic characteristics of these systems, which are significant for applications. On the other hand, the instability of the EOB device certainly has the same importance, the study for which is not ample yet. In this paper we study the increasing absorptive OB, the behaviors of responding to inject signal, also the self-pulsing and chaotic phenomena in the excitonic OB systems.

Semiconductors exhibit large optical nonlinearities near the band edge because of resonance enhancement. Optical bistability occurs when the optical nonlinearities are coupled with feedback. In bulk GaAs and GaAs–AlGaAs multiple-quantum-well superlattices, the nonlinearity arising from the presence of the free-exciton resonance has produced room-temperature optical bistability with a few milliwatts of power. The formation of biexcitons in CuCl, the saturation of the bound exciton on CdS, and band-filling effects in InSb, InAs, and HgCdTe lead to observation of bistability in these materials. A bistable etalon can be operated in an optical-gate mode to generate optical analogs of electronic gates such as and, or, and nor. It has been demonstrated that a GaAs optical NOR gate responds in ∼1 psec, using only ≲3 pJ of energy. However, because of the carrier lifetime of a few nanoseconds, the repetition rate of the NOR gate is now limited to a few hundred megahertz.