Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Annual Meeting Optical Society of America

Raman excited microwave spin echoes for optical data storage

M. S. Shahriar, Philip Hemmer, M. Kim

Published Jan 1, 1992• 0 citations
Publisher

Abstract

There has been much recent interest in the use of optical photon echoes for information storage and processing. Unfortunately, existing optical echo memories require doped crystals at liquid He temperature. The proposed scheme uses an optically excited microwave spin echo to store optical temporal information in the Raman excited ground state coherences. The advantage is that microwave echoes are known to exist at room temperature with decay times approaching 1 s in certain materials. We show that these spin echoes can be excited and detected optically, thereby allowing storage densities that are comparable to the optical echo techniques. Briefly, a three level A system is used, which can be excited by two near resonant optical transitions or one near resonant microwave transition. The Raman interaction first stores temporal and phase information in an inhomogeneously broadened ground states coherence. A microwave π-pulse is used to time-reverse the coherences, thus generating spin echoes that can be detected optically by a Raman probe. Preliminary experimental results will also be reviewed.

DOI
10.1364/oam.1992.tuvv1

Related papers

Optical Memory Using Resonant Raman Pulse Excited Spin Echoes

Byoung Seung HAM, M. S. Shahriar, M. K. Kim +1 more

Optical data storage has been interested in several decades because of the potential of fast access time and high-density storage. Recently volume holographic data storage technique has drawn much interest as new materials and improved techniques have developed.1 However, the large of hologram storage is restricted by low diffraction efficiency and mainly focused to read only memory because of the material's characteristic difficult to rewrite in short time interval. Another optical memory technique (photon echo optical memory)2 based on time-domain has developed since 1980's and made big progress for the area of real time image processing and dynamic random access memory. In this technique, data pulses interfere with timely separated write pulse (reference), and their interference pattern is written as population gratings. A read pulse (reference) retrieves each data pulse information as a four-wave mixing process. The write and read pulse separations are restricted by phase and population decay times of the material, respectively, and storage density is determined by the ratio of inhomogeneous to homogeneous linewidths. Even though photon echo technique has advantages of fast access time (≥ ns) and high-density (≥ Mbits/laser spot), its operating temperature is kept extremely low around liquid helium temperature. This is because that homogeneous decay time rapidly shortens as temperature increases due to phonon interactions, i.e., the ratio of inhomogeneous to homogeneous decay rates is ~ 1 at liquid nitrogen temperature (77 K) in a rare-earth doped solid, so that restricts its applications.

Optical Data Storage•Jan 1, 1998•0 citations

Reversible quantum optical data storage based on resonant Raman optical field excited spin coherence

Byoung Seung HAM

A method of reversible quantum optical data storage is presented using resonant Raman field excited spin coherence, where the spin coherence is stored in an inhomogeneously broadened spin ensemble. Unlike the photon echo method, in the present technique, a 2pi Raman optical rephasing pulse area is used and multimode (parallel) optical channels are available in which the multimode access gives a great benefit to quantum information processors such as quantum repeaters.

arXiv:0807.0374•Optics Express•Aug 28, 2008•6 citations

Efficient generation of Raman echo and time-domain optical data storage by electromagnetically induced transparency

Myung K. Kim, Philip Hemmer, Byoung Seung HAM +1 more

We have observed excitation of spin echoes and spin free induction decay (FID) by electromagnetically induced transparency (EIT) in an optically dense solid sample. The experiments are done in a double-lambda system of 605.7 nm 3H4 - 1D2 transition of Pr3+:Y2SiO5, where the 10.2 MHz ground state spin coherence is excited by low-power resonant Raman pulses. It has been shown that the spin coherence, including spin echo, is equivalent to the transparent state of EIT, and therefore a high efficiency is expected for such resonant Raman-excited spin echo. The observed efficiency of spin echo is as high as 75% of the FID signal at 5K. A background-free detection scheme is used based on EIT and enhanced nondegenerate four-wave mixing. The technique is applied in the frequency-selective time-domain optical data storage, that utilizes the spin as well as the optical inhomogeneous spectral widths. The data storage scheme is analogous to the stimulated spin echo with resonant Raman excitation of the spin coherence. We verify that the write window is determined by the spin T2 which is much longer than the optical T2, especially at higher temperature. We find that the spin dephasing time T2 is almost constant at approximately 500 microseconds in the range of 2 to approximately 6 K, whereas the optical T2 decreases rapidly, by a factor of approximately 50, above 4 K. These results will be useful in the development of high capacity time-domain optical data storage operating at higher temperature.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Nov 5, 1998•1 citation

Spin coherence excitation and rephasing with optically shelved atoms

Byoung Seung HAM, M. S. Shahriar, M. K. Kim +1 more

We investigate the use of resonant optical Raman pulses to excite and rephase ground state spin coherences via the partial storage or shelving of atoms. Unlike direct-rf-excited spin echoes or off-resonant Raman echoes, the resonant Raman optical field efficiently excites and rephases the spin coherence using \ensuremath{\pi} and 2\ensuremath{\pi} pulses, respectively. In a crystal of ${\mathrm{Pr}}^{3+}$ doped ${\mathrm{Y}}_{2}{\mathrm{SiO}}_{5},$ we experimentally observe spin echo efficiency as high as 46% of the free induction decay signal.

Physical review. B, Condensed matter•Nov 1, 1998•57 citations

Nonlinear Optics in Three Level Atomic Systems

Shaoul Ezekiel

The nonlinear optical properties of three-level atomic systems in the resonance Raman configuration are investigated both theoretically and experimentally. Special emphasis is placed on the optical properties which are unique to three-level systems, and have potential device applications. In particular, microwave-phase-dependent optical absorption is demonstrated experimentally. This is of interest because of potential applications to microwave circuit phase mapping, and mm-wave to FIR beam steering and image conversion. Optical data storage with Raman excited microwave spin echoes is also demonstrated experimentally. This technique has potential for increasing storage densities in optical echo memories and may lead to near-room-temperature materials for echo storage and processing. Finally, the optical forces on three- level atoms in Raman resonant standing waves are studied to investigate the potential for using trapped neutral atoms as nonlinear optical elements.

mit•Dec 1, 1992•0 citations

Raman-excited spin coherences for high-temperature spectral hole burning memories

Philip Hemmer, M. S. Shahriar, Byoung Seung HAM +1 more

The possibility of using Raman excited spin coherences to increase the operating temperature of spectral hole burning memories and processors is being explored experimentally. The approach is to store and/or process data using spin coherences excited by optical Raman transitions. This is motivated by the fact that spin coherence lifetimes are much less sensitive to temperature than optical coherence lifetimes. However, direct microwave excitation of spin coherences does not give a high storage density because of the large microwave wavelength. By using optical Raman fields to excite the spin coherences, full optical spatial resolution can be achieved. Initial experiments in Pr doped YSO demonstrated potential for higher temperature operation. Current experiments are concentrating on further increasing the operating temperature using this and other materials.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Nov 22, 1999•0 citations
There has been much recent interest in the use of optical photon echoes for information storage and processing. Unfortunately, existing optical echo memories require doped crystals at liquid He temperature. The proposed scheme uses an optically excited microwave spin echo to store optical temporal information in the Raman excited ground state coherences. The advantage is that microwave echoes are known to exist at room temperature with decay times approaching 1 s in certain materials. We show that these spin echoes can be excited and detected optically, thereby allowing storage densities that are comparable to the optical echo techniques. Briefly, a three level A system is used, which can be excited by two near resonant optical transitions or one near resonant microwave transition. The Raman interaction first stores temporal and phase information in an inhomogeneously broadened ground states coherence. A microwave π-pulse is used to time-reverse the coherences, thus generating spin echoes that can be detected optically by a Raman probe. Preliminary experimental results will also be reviewed.
Optical data storage has been interested in several decades because of the potential of fast access time and high-density storage. Recently volume holographic data storage technique has drawn much interest as new materials and improved techniques have developed.1 However, the large of hologram storage is restricted by low diffraction efficiency and mainly focused to read only memory because of the material's characteristic difficult to rewrite in short time interval. Another optical memory technique (photon echo optical memory)2 based on time-domain has developed since 1980's and made big progress for the area of real time image processing and dynamic random access memory. In this technique, data pulses interfere with timely separated write pulse (reference), and their interference pattern is written as population gratings. A read pulse (reference) retrieves each data pulse information as a four-wave mixing process. The write and read pulse separations are restricted by phase and population decay times of the material, respectively, and storage density is determined by the ratio of inhomogeneous to homogeneous linewidths. Even though photon echo technique has advantages of fast access time (≥ ns) and high-density (≥ Mbits/laser spot), its operating temperature is kept extremely low around liquid helium temperature. This is because that homogeneous decay time rapidly shortens as temperature increases due to phonon interactions, i.e., the ratio of inhomogeneous to homogeneous decay rates is ~ 1 at liquid nitrogen temperature (77 K) in a rare-earth doped solid, so that restricts its applications.
We have observed excitation of spin echoes and spin free induction decay (FID) by electromagnetically induced transparency (EIT) in an optically dense solid sample. The experiments are done in a double-lambda system of 605.7 nm 3H4 - 1D2 transition of Pr3+:Y2SiO5, where the 10.2 MHz ground state spin coherence is excited by low-power resonant Raman pulses. It has been shown that the spin coherence, including spin echo, is equivalent to the transparent state of EIT, and therefore a high efficiency is expected for such resonant Raman-excited spin echo. The observed efficiency of spin echo is as high as 75% of the FID signal at 5K. A background-free detection scheme is used based on EIT and enhanced nondegenerate four-wave mixing. The technique is applied in the frequency-selective time-domain optical data storage, that utilizes the spin as well as the optical inhomogeneous spectral widths. The data storage scheme is analogous to the stimulated spin echo with resonant Raman excitation of the spin coherence. We verify that the write window is determined by the spin T2 which is much longer than the optical T2, especially at higher temperature. We find that the spin dephasing time T2 is almost constant at approximately 500 microseconds in the range of 2 to approximately 6 K, whereas the optical T2 decreases rapidly, by a factor of approximately 50, above 4 K. These results will be useful in the development of high capacity time-domain optical data storage operating at higher temperature.
We investigate the use of resonant optical Raman pulses to excite and rephase ground state spin coherences via the partial storage or shelving of atoms. Unlike direct-rf-excited spin echoes or off-resonant Raman echoes, the resonant Raman optical field efficiently excites and rephases the spin coherence using \ensuremath{\pi} and 2\ensuremath{\pi} pulses, respectively. In a crystal of Pr3+{\mathrm{Pr}}^{3+}Pr3+ doped Y2SiO5,{\mathrm{Y}}_{2}{\mathrm{SiO}}_{5},Y2​SiO5​, we experimentally observe spin echo efficiency as high as 46% of the free induction decay signal.
The nonlinear optical properties of three-level atomic systems in the resonance Raman configuration are investigated both theoretically and experimentally. Special emphasis is placed on the optical properties which are unique to three-level systems, and have potential device applications. In particular, microwave-phase-dependent optical absorption is demonstrated experimentally. This is of interest because of potential applications to microwave circuit phase mapping, and mm-wave to FIR beam steering and image conversion. Optical data storage with Raman excited microwave spin echoes is also demonstrated experimentally. This technique has potential for increasing storage densities in optical echo memories and may lead to near-room-temperature materials for echo storage and processing. Finally, the optical forces on three- level atoms in Raman resonant standing waves are studied to investigate the potential for using trapped neutral atoms as nonlinear optical elements.
The possibility of using Raman excited spin coherences to increase the operating temperature of spectral hole burning memories and processors is being explored experimentally. The approach is to store and/or process data using spin coherences excited by optical Raman transitions. This is motivated by the fact that spin coherence lifetimes are much less sensitive to temperature than optical coherence lifetimes. However, direct microwave excitation of spin coherences does not give a high storage density because of the large microwave wavelength. By using optical Raman fields to excite the spin coherences, full optical spatial resolution can be achieved. Initial experiments in Pr doped YSO demonstrated potential for higher temperature operation. Current experiments are concentrating on further increasing the operating temperature using this and other materials.