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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Efficient generation of Raman echo and time-domain optical data storage by electromagnetically induced transparency

Myung K. Kim, Philip Hemmer, Byoung Seung HAM, M. S. Shahriar

Published Nov 5, 1998• 1 citation
Publisher

Abstract

We have observed excitation of spin echoes and spin free induction decay (FID) by electromagnetically induced transparency (EIT) in an optically dense solid sample. The experiments are done in a double-lambda system of 605.7 nm 3H4 - 1D2 transition of Pr3+:Y2SiO5, where the 10.2 MHz ground state spin coherence is excited by low-power resonant Raman pulses. It has been shown that the spin coherence, including spin echo, is equivalent to the transparent state of EIT, and therefore a high efficiency is expected for such resonant Raman-excited spin echo. The observed efficiency of spin echo is as high as 75% of the FID signal at 5K. A background-free detection scheme is used based on EIT and enhanced nondegenerate four-wave mixing. The technique is applied in the frequency-selective time-domain optical data storage, that utilizes the spin as well as the optical inhomogeneous spectral widths. The data storage scheme is analogous to the stimulated spin echo with resonant Raman excitation of the spin coherence. We verify that the write window is determined by the spin T2 which is much longer than the optical T2, especially at higher temperature. We find that the spin dephasing time T2 is almost constant at approximately 500 microseconds in the range of 2 to approximately 6 K, whereas the optical T2 decreases rapidly, by a factor of approximately 50, above 4 K. These results will be useful in the development of high capacity time-domain optical data storage operating at higher temperature.

DOI
10.1117/12.330412

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Physical review. B, Condensed matter•Nov 1, 1998•57 citations
We have observed excitation of spin echoes and spin free induction decay (FID) by electromagnetically induced transparency (EIT) in an optically dense solid sample. The experiments are done in a double-lambda system of 605.7 nm 3H4 - 1D2 transition of Pr3+:Y2SiO5, where the 10.2 MHz ground state spin coherence is excited by low-power resonant Raman pulses. It has been shown that the spin coherence, including spin echo, is equivalent to the transparent state of EIT, and therefore a high efficiency is expected for such resonant Raman-excited spin echo. The observed efficiency of spin echo is as high as 75% of the FID signal at 5K. A background-free detection scheme is used based on EIT and enhanced nondegenerate four-wave mixing. The technique is applied in the frequency-selective time-domain optical data storage, that utilizes the spin as well as the optical inhomogeneous spectral widths. The data storage scheme is analogous to the stimulated spin echo with resonant Raman excitation of the spin coherence. We verify that the write window is determined by the spin T2 which is much longer than the optical T2, especially at higher temperature. We find that the spin dephasing time T2 is almost constant at approximately 500 microseconds in the range of 2 to approximately 6 K, whereas the optical T2 decreases rapidly, by a factor of approximately 50, above 4 K. These results will be useful in the development of high capacity time-domain optical data storage operating at higher temperature.
We report the experimental observation of optical data storage by frequency-selective stimulated spin echoes based on electromagnetically induced transparency in an inhomogeneously broadened rare-earth-doped solid. We find that the spin dephasing time T(2) is almost constant in the range 2-6 K, whereas the optical T(2) shortens rapidly above 4 K. This experiment demonstrates the potential of spin echoes excited by electromagnetically induced transparency for higher-capacity optical data storage at higher temperature.
Summary form only given. When a resonant Raman laser field interacts with a three-level energy system, the system can undergo changes of linear and nonlinear optical properties. Especially in an optically thick medium, a strong resonant electromagnetic field can dress the energy states so that another resonant probe field may not be absorbed. This is due to destructive quantum interference between two absorption paths from the ground state to the dressed states. This phenomenon is called electromagnetically induced transparency. Our recently demonstrated Raman excited spin echo technique uses optically induced spin coherence. In general, the spin coherence decay time is much longer and more temperature insensitive than the optical coherence, so that the temperature limitation of the photon echoes can be overcome. The spin echoes are read by another optical field via enhanced four-wave mixing. Here, the nonlinearity in the optical transition is enhanced by EIT. In this paper we report the EIT observation at temperatures higher than that needed for the (optical) spectral hole-burning.
Optical data storage has been interested in several decades because of the potential of fast access time and high-density storage. Recently volume holographic data storage technique has drawn much interest as new materials and improved techniques have developed.1 However, the large of hologram storage is restricted by low diffraction efficiency and mainly focused to read only memory because of the material's characteristic difficult to rewrite in short time interval. Another optical memory technique (photon echo optical memory)2 based on time-domain has developed since 1980's and made big progress for the area of real time image processing and dynamic random access memory. In this technique, data pulses interfere with timely separated write pulse (reference), and their interference pattern is written as population gratings. A read pulse (reference) retrieves each data pulse information as a four-wave mixing process. The write and read pulse separations are restricted by phase and population decay times of the material, respectively, and storage density is determined by the ratio of inhomogeneous to homogeneous linewidths. Even though photon echo technique has advantages of fast access time (≥ ns) and high-density (≥ Mbits/laser spot), its operating temperature is kept extremely low around liquid helium temperature. This is because that homogeneous decay time rapidly shortens as temperature increases due to phonon interactions, i.e., the ratio of inhomogeneous to homogeneous decay rates is ~ 1 at liquid nitrogen temperature (77 K) in a rare-earth doped solid, so that restricts its applications.
There has been much recent interest in the use of optical photon echoes for information storage and processing. Unfortunately, existing optical echo memories require doped crystals at liquid He temperature. The proposed scheme uses an optically excited microwave spin echo to store optical temporal information in the Raman excited ground state coherences. The advantage is that microwave echoes are known to exist at room temperature with decay times approaching 1 s in certain materials. We show that these spin echoes can be excited and detected optically, thereby allowing storage densities that are comparable to the optical echo techniques. Briefly, a three level A system is used, which can be excited by two near resonant optical transitions or one near resonant microwave transition. The Raman interaction first stores temporal and phase information in an inhomogeneously broadened ground states coherence. A microwave π-pulse is used to time-reverse the coherences, thus generating spin echoes that can be detected optically by a Raman probe. Preliminary experimental results will also be reviewed.
We investigate the use of resonant optical Raman pulses to excite and rephase ground state spin coherences via the partial storage or shelving of atoms. Unlike direct-rf-excited spin echoes or off-resonant Raman echoes, the resonant Raman optical field efficiently excites and rephases the spin coherence using \ensuremath{\pi} and 2\ensuremath{\pi} pulses, respectively. In a crystal of Pr3+{\mathrm{Pr}}^{3+}Pr3+ doped Y2SiO5,{\mathrm{Y}}_{2}{\mathrm{SiO}}_{5},Y2​SiO5​, we experimentally observe spin echo efficiency as high as 46% of the free induction decay signal.