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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Raman-excited spin coherences for high-temperature spectral hole burning memories

Philip Hemmer, M. S. Shahriar, Byoung Seung HAM, Myung K. Kim

Published Nov 22, 1999• 0 citations
Publisher

Abstract

The possibility of using Raman excited spin coherences to increase the operating temperature of spectral hole burning memories and processors is being explored experimentally. The approach is to store and/or process data using spin coherences excited by optical Raman transitions. This is motivated by the fact that spin coherence lifetimes are much less sensitive to temperature than optical coherence lifetimes. However, direct microwave excitation of spin coherences does not give a high storage density because of the large microwave wavelength. By using optical Raman fields to excite the spin coherences, full optical spatial resolution can be achieved. Initial experiments in Pr doped YSO demonstrated potential for higher temperature operation. Current experiments are concentrating on further increasing the operating temperature using this and other materials.

DOI
10.1117/12.370236

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The possibility of using Raman excited spin coherences to increase the operating temperature of spectral hole burning memories and processors is being explored experimentally. The approach is to store and/or process data using spin coherences excited by optical Raman transitions. This is motivated by the fact that spin coherence lifetimes are much less sensitive to temperature than optical coherence lifetimes. However, direct microwave excitation of spin coherences does not give a high storage density because of the large microwave wavelength. By using optical Raman fields to excite the spin coherences, full optical spatial resolution can be achieved. Initial experiments in Pr doped YSO demonstrated potential for higher temperature operation. Current experiments are concentrating on further increasing the operating temperature using this and other materials.
Summary form only given.Optical spectral hole-burning has demonstrated the ability to achieve high-capacity, high-speed data storage. Unfortunately, widespread application of this technique has been limited by the requirement for low temperature operation. To circumvent this problem, we have been investigating the possibility of using Raman-excited spin coherences to store and recall optical data. The motivation is that optical Raman excitation allows storage densities and response times characteristic of optical hole-burning memories, but because it is based on long-lived spin coherences, it can maintain these characteristics at much higher operating temperatures. For the initial experiments we chose to use N-V color centers in diamond as the Raman hole-burning material because it is comparatively well studied.
Summary form only given. The use of optical Raman interactions to excite spin coherences in solids has numerous potential applications, ranging from low-power nonlinear optics to high-temperature spectral hole burning memories to solid-state quantum computing. The interest in Raman excitation lies in the fact that the spin coherences can be efficiently excited and manipulated using optical laser fields yet are weakly coupled to the environment and hence have the long coherence lifetimes needed for optical memories and quantum computing. The interest in nitrogen-vacancy (N-V) color centers in diamond is its large optical oscillator strength. For memory, a large oscillator strength is important for high temperature operation. For quantum computing, the high optical transition rate enables the higher gate speed and the larger number of quantum logic operations that can be performed within the spin coherence lifetime.
There has been much recent interest in the use of optical photon echoes for information storage and processing. Unfortunately, existing optical echo memories require doped crystals at liquid He temperature. The proposed scheme uses an optically excited microwave spin echo to store optical temporal information in the Raman excited ground state coherences. The advantage is that microwave echoes are known to exist at room temperature with decay times approaching 1 s in certain materials. We show that these spin echoes can be excited and detected optically, thereby allowing storage densities that are comparable to the optical echo techniques. Briefly, a three level A system is used, which can be excited by two near resonant optical transitions or one near resonant microwave transition. The Raman interaction first stores temporal and phase information in an inhomogeneously broadened ground states coherence. A microwave π-pulse is used to time-reverse the coherences, thus generating spin echoes that can be detected optically by a Raman probe. Preliminary experimental results will also be reviewed.
The use of persistent spectral hole burning in optical data storage allows an increase of the storage density up to a factor of 1000 compared to the common spatial matrix of optical bits.1 The information is stored by burning at low temperature a sequence of narrow spectral holes in the inhomogeneously broadened optical transition of optical centers, e.g. dye molecules embedded in an amorphous polymer, with a tunable narrow-bandwidth laser. One bit of information is encoded by the presence or absence of a hole at a given location in frequency space. The information is read by observing the absorption or the fluorescence of the storage material using a laser with tunable frequency. One of the problems of spectral hole burning data storage arises from the fact that for addressing the memory locations the laser frequency has to be changed over a large frequency range with high accuracy and speed.
Persistent spectral hole-burning (PSHB) and its applications in data storage and processing are described. Purely electronic zero-phonon lines having very high peak values in the low temperature impurity spectra of solids are considered. Limitations for very large capacity PSHB memories put by the number of impurity molecules to store one bit are discussed. Doped with impurities optical fiber memory is proposed as a means to have low impurity concentration simultaneously with a large number of the impurities to store one bit. Bit-by-bit (digital) storage is compared to the distributed one and the advantages of the two versions of the latter -- PSHB holography and PSHB modeling of neural networks -- are considered. An experiment of simultaneous read-out over coordinates and frequency in neural network modeling is described. Requirements to PSHB materials and possibilities of the existence of materials effective at high temperatures are discussed.
Raman excited spin coherences were experimentally observed in nitrogen-vacancy (N-V) diamond color centers via nondegenerate four-wave mixing (NDFWM) and electromagnetically induced transparency (EIT). The maximal EIT-induced absorption suppression was found to be 17%, which corresponds to 70% of what is possible given the four possible geometric orientations of the N-V center in diamond. The properties of these coherences are discussed in the context of potential applications to solid-state quantum computing and high-temperature spectral hole burning memories.