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Applied Physics Letters

Electroluminescence of negatively charged single NV centers in diamond

Moriyoshi Haruyama, Hiromitsu Kato, Masahiko Ogura, Y. Kato, Daisuke Takeuchi, Satoshi Yamasaki, Takayuki Iwasaki, Hiroki Morishita, Masanori Fujiwara, Norikazu Mizuochi, Toshiharu Makino

Published Feb 13, 2023• 11 citations
Publisher

Abstract

The realization of electroluminescence (EL) of negatively charged nitrogen vacancy (NV−) centers is important toward all-electrical control of diamond quantum devices. In this study, we demonstrated electrical excitation and detection of EL of single NV− centers by using lateral diamond p+–i(n−)–n+ diodes. It had been grown by homoepitaxy using the plasma enhanced chemical vapor deposition technique. We introduced a lightly phosphorus doped i(n−) layer to stabilize the negative state of NV centers. It was estimated that the efficiency of the electrical excitation rate of the NV center was more than 30 times enhanced by introducing lateral diamond p+–i(n−)–n+ diodes structure compared with the previous vertical diode. Furthermore, the EL of a single NV− center embedded in the i(n−) layer region was characterized. The results show that the charge state of the single NV centers can be manipulated by the voltage applied to the p+–i(n−)–n+ diode, where the emission of EL is increasingly dominated by NV− in the range of 30 to 50 V.

DOI
10.1063/5.0138050

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The realization of electroluminescence (EL) of negatively charged nitrogen vacancy (NV−) centers is important toward all-electrical control of diamond quantum devices. In this study, we demonstrated electrical excitation and detection of EL of single NV− centers by using lateral diamond p+–i(n−)–n+ diodes. It had been grown by homoepitaxy using the plasma enhanced chemical vapor deposition technique. We introduced a lightly phosphorus doped i(n−) layer to stabilize the negative state of NV centers. It was estimated that the efficiency of the electrical excitation rate of the NV center was more than 30 times enhanced by introducing lateral diamond p+–i(n−)–n+ diodes structure compared with the previous vertical diode. Furthermore, the EL of a single NV− center embedded in the i(n−) layer region was characterized. The results show that the charge state of the single NV centers can be manipulated by the voltage applied to the p+–i(n−)–n+ diode, where the emission of EL is increasingly dominated by NV− in the range of 30 to 50 V.
Charge-states modulation of nitrogen-vacancy (NV) centers incorporated into single crystal diamond films attracts increasing attention for solid-state qubits applications. Here, we discuss the electro- and photoluminescence emission properties of NV centers incorporated by gas phase nitrogen delta-doping of the intrinsic diamond layer of a positive-intrinsic-negative (PIN) junction diode. The experiments show that the charge state of NV centers can be intentionally controlled by applying well-defined external bias voltages. It can be switched from the negatively charged state NV− to the neutral charged state NV0 when a strong forward bias potential is applied. This can be switched back by application of reverse potentials. These results will be discussed assuming basic electronic properties of diamond PIN diodes, including the variation of spectral properties as well as the dynamics of charge state transitions.
Electrically driven emission of nitrogen-vacancy (NV) color centers in diamond has recently emerged as a viable candidate for quantum photonics. However, it is challenging to efficiently excite NV centers by an electric field because of the low density of free carriers in doped diamond. Here, we report efficient electroluminescence of neutrally charged nitrogen-vacancy (NV0) color centers under a high electric field (105 V/cm) and study its Stark effect in a MIM (Metal–Insulator–Metal) diamond device. The MIM device was fabricated by electron beam evaporating molybdenum electrodes and microwave plasma chemical vapor depositing a nitrogen-doped diamond epilayer successively on a single-crystal diamond substrate. We demonstrate the field dependence of the electrically driven emission and extract the NV0 ground state electric field susceptibility of 15.83 ± 0.86 GHzmMV−1 from the Stark effect at 5.5 K. Our findings provide a perspective toward electrically exciting color centers in diamond and help one to understand the inherent features of NV0.
Electrically driven emission from negatively charged silicon-vacancy (SiV)− centers in single crystal diamond is demonstrated. The SiV centers were generated using ion implantation into an i region of a p-i-n single crystal diamond diode. Both electroluminescence and the photoluminescence signals exhibit the typical emission that is attributed to the (SiV)− centers. Under forward and reversed biased PL measurements, no signal from the neutral (SiV)0 defect could be observed. The realization of electrically driven (SiV)− emission is promising for scalable nanophotonics devices employing color centers in single crystal diamond.
Optical illumination on negatively charged nitrogen-vacancy $(\mathrm{N}{\mathrm{V}}^{\ensuremath{-}})$ centers inevitably causes stochastic charge-state transitions between the $\mathrm{N}{\mathrm{V}}^{\ensuremath{-}}$ and the neutral charge state of the NV center. It limits the steady-state population of $\mathrm{N}{\mathrm{V}}^{\ensuremath{-}}$ to 5% at minimum (\ensuremath{\sim}610 nm) and 80% (\ensuremath{\sim}532 nm) at maximum in intrinsic diamond depending on the wavelength. Here, we show Fermi-level control by phosphorus doping generates 99.4 \ifmmode\pm\else\textpm\fi{} 0.1% $\mathrm{N}{\mathrm{V}}^{\ensuremath{-}}$ under 1-\ensuremath{\mu}W and 593-nm excitation which is close to maximum absorption of $\mathrm{N}{\mathrm{V}}^{\ensuremath{-}}$. The pure $\mathrm{N}{\mathrm{V}}^{\ensuremath{-}}$ shows a fivefold increase in luminescence and a fourfold enhancement of an optically detected magnetic resonance under 593-nm excitation compared with those in intrinsic diamond.
The negatively-charged nitrogen-vacancy (NV) center is the most studied optical center in diamond and is very important for applications in quantum information science. Many proposals for integrating NV centers in quantum and sensing applications rely on their tailored fabrication in ultra pure host material. In this study, we use ion implantation to controllably introduce nitrogen into high purity, low nitrogen chemical vapor deposition diamond samples. The properties of the resulting NV centers are studied as a function of implantation temperature, annealing temperature, and implantation fluence. We compare the implanted NV centers with native NV centers present deep in the bulk of the as-grown samples. The results for implanted NV centers are promising but indicate, at this stage, that the deep native NV centers possess overall superior optical properties. In particular, the implanted NV centers obtained after annealing at 2000 °C under a stabilizing pressure of 8 GPa showed an ensemble linewidth of 0.17 nm compared to 0.61 nm after annealing at 1000 °C. Over the same temperature range, the ensemble NV−/NV0 ratio increased by a factor of ∼5, although this was accompanied by an overall decrease in the NV count.
Charge state instabilities have been a bottleneck for the implementation of solid-state spin systems and pose a major challenge to the development of spin-based quantum technologies. Here we investigate the stabilization of negatively charged nitrogen-vacancy (NV−^-−) centers in phosphorus-doped diamond at liquid helium temperatures. Photoionization of phosphorous donors in conjunction with charge diffusion at the nanoscale enhances NV0^00 to NV−^-− conversion and stabilizes the NV−^-− charge state without the need for an additional repump laser. The phosphorus-assisted stabilization is explored and confirmed both with experiments and our theoretical model. Stable photoluminescence-excitation spectra are obtained for NV−^-− centers created during the growth. The fluorescence is continuously recorded under resonant excitation to real-time monitor the charge state and the ionization and recombination rates are extracted from time traces. We find a linear laser power dependence of the recombination rate as opposed to the conventional quadratic dependence, which is attributed to the photo-ionization of phosphorus atoms.