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Applied Physics Letters

Electroluminescence of NV by impact excitation and Stark shift in a MIM diamond structure

Yuhang Guo, Wei Zhu, Jiaxin Zhao, Shengran Lin, Yuanjie Yang, Liren Lou, Guanzhong Wang

Published Dec 20, 2021• 5 citations
Publisher

Abstract

Electrically driven emission of nitrogen-vacancy (NV) color centers in diamond has recently emerged as a viable candidate for quantum photonics. However, it is challenging to efficiently excite NV centers by an electric field because of the low density of free carriers in doped diamond. Here, we report efficient electroluminescence of neutrally charged nitrogen-vacancy (NV0) color centers under a high electric field (105 V/cm) and study its Stark effect in a MIM (Metal–Insulator–Metal) diamond device. The MIM device was fabricated by electron beam evaporating molybdenum electrodes and microwave plasma chemical vapor depositing a nitrogen-doped diamond epilayer successively on a single-crystal diamond substrate. We demonstrate the field dependence of the electrically driven emission and extract the NV0 ground state electric field susceptibility of 15.83 ± 0.86 GHzmMV−1 from the Stark effect at 5.5 K. Our findings provide a perspective toward electrically exciting color centers in diamond and help one to understand the inherent features of NV0.

DOI
10.1063/5.0076762

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Electrically driven emission of nitrogen-vacancy (NV) color centers in diamond has recently emerged as a viable candidate for quantum photonics. However, it is challenging to efficiently excite NV centers by an electric field because of the low density of free carriers in doped diamond. Here, we report efficient electroluminescence of neutrally charged nitrogen-vacancy (NV0) color centers under a high electric field (105 V/cm) and study its Stark effect in a MIM (Metal–Insulator–Metal) diamond device. The MIM device was fabricated by electron beam evaporating molybdenum electrodes and microwave plasma chemical vapor depositing a nitrogen-doped diamond epilayer successively on a single-crystal diamond substrate. We demonstrate the field dependence of the electrically driven emission and extract the NV0 ground state electric field susceptibility of 15.83 ± 0.86 GHzmMV−1 from the Stark effect at 5.5 K. Our findings provide a perspective toward electrically exciting color centers in diamond and help one to understand the inherent features of NV0.
The realization of electroluminescence (EL) of negatively charged nitrogen vacancy (NV−) centers is important toward all-electrical control of diamond quantum devices. In this study, we demonstrated electrical excitation and detection of EL of single NV− centers by using lateral diamond p+–i(n−)–n+ diodes. It had been grown by homoepitaxy using the plasma enhanced chemical vapor deposition technique. We introduced a lightly phosphorus doped i(n−) layer to stabilize the negative state of NV centers. It was estimated that the efficiency of the electrical excitation rate of the NV center was more than 30 times enhanced by introducing lateral diamond p+–i(n−)–n+ diodes structure compared with the previous vertical diode. Furthermore, the EL of a single NV− center embedded in the i(n−) layer region was characterized. The results show that the charge state of the single NV centers can be manipulated by the voltage applied to the p+–i(n−)–n+ diode, where the emission of EL is increasingly dominated by NV− in the range of 30 to 50 V.
Optical sources that deliver single photons on demand play a key role in quantum cryptography and optical quantum computations. At present, color centers in wide-bandgap semiconductors, such as the nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers in diamond, are considered to be the most promising candidates for practical quantum information applications owing to their unique emission properties at room temperature. However, for practical reasons, single-photon sources should be pumped electrically, which is required for integrability, scalability, and energy efficiency. However, diamond and related wide-bandgap semiconductor materials are at the interface between insulators and semiconductors, which makes electrical excitation of color centers very challenging. Here, we report on our progress in the understanding of single-photon electroluminescence of color centers in diamond, discuss different factors affecting the brightness of these emitter under electrical excitation, and study how to improve the performance of electrically- pumped single-photon sources based on color centers in diamond.
The silicon-vacancy (SiV) color center in diamond has recently emerged as a promising qubit for quantum photonics. However, the electrical control and excitation of the SiV centers are challenging due to the low density of free carriers in doped diamond. Here, we realize electrical excitation of SiV centers in a single-crystal diamond membrane, which is promising for scalable photonic architectures. We further demonstrate electrical switching of the charge states of the SiV centers by applying a forward bias voltage to the fabricated diamond-membrane devices and identify the position of the SiV−/SiV0 charge transition level. Our findings provide a perspective toward electrical triggering of color centers in diamond and accelerate the development of scalable quantum nanophotonic technologies.
The negatively charged nitrogen vacancy (NV${}^{\ensuremath{-}}$) center in diamond is a well-known color center with interesting applications in nanoscale sensing and quantum metrology, due to its high sensitivity to minute local electric, magnetic, and strain fields. Motivated by these applications of the this center, the authors employ here first-principles calculations based on quantum embedding to derive a many-body description of its excited-state dipole couplings and strain susceptibilities, which underlie the electric field and strain induced Stark effects.
Nitrogen-vacancy (NV) centers in diamond have been exploited as reliable single-photon emitters, with applications in quantum technologies and metrology. Two charge states are known for NV centers: NV0 and NV–, with the latter being mostly studied due to its long electron spin coherence time. Therefore, control over the charge state of the NV centers is essential. However, the understanding of the dynamics between the different states still remains challenging. Here we show that electron excitation induces the conversion from NV– to NV0 through electron-induced carrier generation. We present for the first time ultrafast pump-probe cathodoluminescence spectroscopy, with electron pulses as pump, and laser pulses as probe, to prepare and read out the NV states. The experimental data is explained with a model considering carrier dynamics (0.8 ns), NV0 spontaneous emission (20 ns) and NV0NV– back transfer (500 ms). Our results provide new insights into the NV–NV0 conversion dynamics, and into the use of pump-probe cathodoluminescence as a nanoscale NV characterization tool.
Electrically driven emission from negatively charged silicon-vacancy (SiV)− centers in single crystal diamond is demonstrated. The SiV centers were generated using ion implantation into an i region of a p-i-n single crystal diamond diode. Both electroluminescence and the photoluminescence signals exhibit the typical emission that is attributed to the (SiV)− centers. Under forward and reversed biased PL measurements, no signal from the neutral (SiV)0 defect could be observed. The realization of electrically driven (SiV)− emission is promising for scalable nanophotonics devices employing color centers in single crystal diamond.