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Physical review. B./Physical review. B

Pure negatively charged state of the NV center in n -type diamond

Yuki Doi, Takahiro Fukui, Hiromitsu Kato, Toshiharu Makino, Satoshi Yamasaki, Toshiyuki Tashima, Hiroki Morishita, Shinji Miwa, Fedor Jelezko, Yoshishige Suzuki, Norikazu Mizuochi

Published Feb 3, 2016• 102 citations
Publisher

Abstract

Optical illumination on negatively charged nitrogen-vacancy $(\mathrm{N}{\mathrm{V}}^{\ensuremath{-}})$ centers inevitably causes stochastic charge-state transitions between the $\mathrm{N}{\mathrm{V}}^{\ensuremath{-}}$ and the neutral charge state of the NV center. It limits the steady-state population of $\mathrm{N}{\mathrm{V}}^{\ensuremath{-}}$ to 5% at minimum (\ensuremath{\sim}610 nm) and 80% (\ensuremath{\sim}532 nm) at maximum in intrinsic diamond depending on the wavelength. Here, we show Fermi-level control by phosphorus doping generates 99.4 \ifmmode\pm\else\textpm\fi{} 0.1% $\mathrm{N}{\mathrm{V}}^{\ensuremath{-}}$ under 1-\ensuremath{\mu}W and 593-nm excitation which is close to maximum absorption of $\mathrm{N}{\mathrm{V}}^{\ensuremath{-}}$. The pure $\mathrm{N}{\mathrm{V}}^{\ensuremath{-}}$ shows a fivefold increase in luminescence and a fourfold enhancement of an optically detected magnetic resonance under 593-nm excitation compared with those in intrinsic diamond.

DOI
10.1103/physrevb.93.081203

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Optical illumination on negatively charged nitrogen-vacancy (NV\ensuremath−)(\mathrm{N}{\mathrm{V}}^{\ensuremath{-}})(NV\ensuremath−) centers inevitably causes stochastic charge-state transitions between the NV\ensuremath−\mathrm{N}{\mathrm{V}}^{\ensuremath{-}}NV\ensuremath− and the neutral charge state of the NV center. It limits the steady-state population of NV\ensuremath−\mathrm{N}{\mathrm{V}}^{\ensuremath{-}}NV\ensuremath− to 5% at minimum (\ensuremath{\sim}610 nm) and 80% (\ensuremath{\sim}532 nm) at maximum in intrinsic diamond depending on the wavelength. Here, we show Fermi-level control by phosphorus doping generates 99.4 \ifmmode\pm\else\textpm\fi{} 0.1% NV\ensuremath−\mathrm{N}{\mathrm{V}}^{\ensuremath{-}}NV\ensuremath− under 1-\ensuremath{\mu}W and 593-nm excitation which is close to maximum absorption of NV\ensuremath−\mathrm{N}{\mathrm{V}}^{\ensuremath{-}}NV\ensuremath−. The pure NV\ensuremath−\mathrm{N}{\mathrm{V}}^{\ensuremath{-}}NV\ensuremath− shows a fivefold increase in luminescence and a fourfold enhancement of an optically detected magnetic resonance under 593-nm excitation compared with those in intrinsic diamond.
Nitrogen vacancy (NV) centers in diamond have been identified over the past few years as promising systems for a variety of applications, ranging from quantum information science to magnetic sensing. This relies on the unique optical and spin properties of the negatively charged NV. Many of these applications require shallow NV centers, i.e., NVs that are close (a few nm) to the diamond surface. In recent years there has been increasing interest in understanding the spin and charge dynamics of NV centers under various illumination conditions, specifically under infrared (IR) excitation, which has been demonstrated to have significant impact on the NV centers' emission and charge state. Nevertheless, a full understanding of all experimental data is still lacking, with further complications arising from potential differences between the photodynamics of bulk and shallow NVs. Here we suggest a generalized quantitative model for NV center spin- and charge-state dynamics under both green and IR excitation. We experimentally extract the relevant transition rates, providing a comprehensive model which reconciles all existing experimental results in the literature, except for highly nonlinear regimes. Moreover, we identify key differences between the photodynamics of bulk and shallow NVs, and use them to significantly enhance the initialization fidelity of shallow NVs to the useful negatively charged state.
The realization of electroluminescence (EL) of negatively charged nitrogen vacancy (NV−) centers is important toward all-electrical control of diamond quantum devices. In this study, we demonstrated electrical excitation and detection of EL of single NV− centers by using lateral diamond p+–i(n−)–n+ diodes. It had been grown by homoepitaxy using the plasma enhanced chemical vapor deposition technique. We introduced a lightly phosphorus doped i(n−) layer to stabilize the negative state of NV centers. It was estimated that the efficiency of the electrical excitation rate of the NV center was more than 30 times enhanced by introducing lateral diamond p+–i(n−)–n+ diodes structure compared with the previous vertical diode. Furthermore, the EL of a single NV− center embedded in the i(n−) layer region was characterized. The results show that the charge state of the single NV centers can be manipulated by the voltage applied to the p+–i(n−)–n+ diode, where the emission of EL is increasingly dominated by NV− in the range of 30 to 50 V.
Important features in the spectral and temporal photoluminescence excitation of single nitrogen-vacancy (NV) centers in diamond are reported at conditions relevant for quantum applications. Bidirectional switching occurs between the neutral (NV0{\mathrm{NV}}^{0}NV0) and negatively charged (${\mathrm{NV}}^{\ensuremath{-}}$) states. Luminescence of ${\mathrm{NV}}^{\ensuremath{-}}$ is most efficiently triggered at a wavelength of 575 nm which ensures optimum excitation and recharging of NV0{\mathrm{NV}}^{0}NV0. The dark state of ${\mathrm{NV}}^{\ensuremath{-}}$ is identified as NV0{\mathrm{NV}}^{0}NV0. A narrow resonance is observed in the excitation spectra at 521 nm, which mediates efficient conversion to NV0{\mathrm{NV}}^{0}NV0.
The photophysics and charge state dynamics of the nitrogen vacancy (NV) center in diamond has been extensively investigated, but is still not fully understood. In contrast to previous work, we find that NV0{\mathrm{NV}}^{0}NV0 converts to ${\mathrm{NV}}^{\ensuremath{-}}$ under excitation with low power near-infrared (1064-nm) light, resulting in increased photoluminescence from the ${\mathrm{NV}}^{\ensuremath{-}}$ state. We used a combination of spectral and time-resolved photoluminescence experiments and rate-equation modeling to conclude that NV0{\mathrm{NV}}^{0}NV0 converts to ${\mathrm{NV}}^{\ensuremath{-}}$ via absorption of 1064-nm photons from the valence band of diamond. We report fast quenching and recovery of the photoluminescence from both charge states of the NV center under low power 1064-nm laser excitation, which has not been previously observed. We also find, using optically detected magnetic resonance experiments, that the charge transfer process mediated by the 1064-nm laser is spin dependent.
We report measurements of the optical properties of the 1042 nm transition of negatively charged nitrogen-vacancy (NV) centers in type-1b diamond. The results indicate that the upper level of this transition couples to the ${m}_{s}=\ifmmode\pm\else\textpm\fi{}1$ sublevels of the 3E^{3}E3E excited state and is short lived with a lifetime of $\ensuremath{\lesssim}1\text{ }\text{ns}$. The lower level is shown to have a temperature-dependent lifetime of 462(10) ns at 4.4 K and 219(3) ns at 295 K. The light-polarization dependence of 1042 nm absorption confirms that the transition is between orbitals of A1{A}_{1}A1​ and EEE character. The results shed light on the NV level structure and optical pumping mechanism.
Charge-states modulation of nitrogen-vacancy (NV) centers incorporated into single crystal diamond films attracts increasing attention for solid-state qubits applications. Here, we discuss the electro- and photoluminescence emission properties of NV centers incorporated by gas phase nitrogen delta-doping of the intrinsic diamond layer of a positive-intrinsic-negative (PIN) junction diode. The experiments show that the charge state of NV centers can be intentionally controlled by applying well-defined external bias voltages. It can be switched from the negatively charged state NV− to the neutral charged state NV0 when a strong forward bias potential is applied. This can be switched back by application of reverse potentials. These results will be discussed assuming basic electronic properties of diamond PIN diodes, including the variation of spectral properties as well as the dynamics of charge state transitions.