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MEMS-based Arrays of Micro Ion Traps for Quantum Simulation Scaling.

Matthew G. Blain

Published Nov 20, 2020• 0 citations
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The prospect of building a quantum information processor underlies many recent advances ion trap fabrication techniques. Potentially, a quantum computer could be constructed from a large array of interconnected ion traps. We report on a micrometer-scale ion trap, fabricated from bulk silicon using micro-electromechanical systems (MEMS) techniques. The trap geometry is relatively simple in that the electrodes lie in a single plane beneath the ions. In such a trap we confine laser-cooled 24Mg+ ions approximately 40 microns above the surface. The fabrication technique and planar electrode geometry together make this approach amenable to scaling up to large trap arrays. In addition we observe that little laser cooling light is scattered by the electrodes.

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Ion shuttling method for long-range shuttling of trapped ions in MEMS-fabricated ion traps

Minjae Lee, Junho Jeong, Yunjae Park +3 more

Abstract A large-scale ion trap array fabricated using the microelectromechanical systems (MEMS) technology is expected to be a promising device for building a practical quantum computer. Shuttling trapped ions is essential for operating scalable ion trap structures. This paper proposes an ion shuttling method for a MEMS-fabricated surface ion trap. Change of secular frequency of trapping potential can cause heating and subsequent loss of ions. Therefore, direct current voltage sets to form uniform ion trapping potentials around the ions while shuttling are calculated by simulations. A 32-channel digital-to-analog converter system is developed to apply the calculated voltage sets to the electrodes of the MEMS-fabricated surface ion trap. The shuttling process is experimented using trapped 174Yb+ ions. The successful round trip of the ion for 1920 μm is demonstrated using the developed approach.

Japanese Journal of Applied Physics•Jan 14, 2021•10 citations
The prospect of building a quantum information processor underlies many recent advances ion trap fabrication techniques. Potentially, a quantum computer could be constructed from a large array of interconnected ion traps. We report on a micrometer-scale ion trap, fabricated from bulk silicon using micro-electromechanical systems (MEMS) techniques. The trap geometry is relatively simple in that the electrodes lie in a single plane beneath the ions. In such a trap we confine laser-cooled 24Mg+ ions approximately 40 microns above the surface. The fabrication technique and planar electrode geometry together make this approach amenable to scaling up to large trap arrays. In addition we observe that little laser cooling light is scattered by the electrodes.
Abstract A large-scale ion trap array fabricated using the microelectromechanical systems (MEMS) technology is expected to be a promising device for building a practical quantum computer. Shuttling trapped ions is essential for operating scalable ion trap structures. This paper proposes an ion shuttling method for a MEMS-fabricated surface ion trap. Change of secular frequency of trapping potential can cause heating and subsequent loss of ions. Therefore, direct current voltage sets to form uniform ion trapping potentials around the ions while shuttling are calculated by simulations. A 32-channel digital-to-analog converter system is developed to apply the calculated voltage sets to the electrodes of the MEMS-fabricated surface ion trap. The shuttling process is experimented using trapped 174Yb+ ions. The successful round trip of the ion for 1920 μm is demonstrated using the developed approach.