Robust maturation of cryogenic electronics has been limited by the lack of high-throughput measurement capabilities, especially for electronics that operate at 4 K. Automated on-wafer probing to characterize the dc and RF performance of components and complete circuits has been a critical element in the development of room temperature electronics. We report here the development of a fully automated wafer prober that operates with the wafer cooled to a temperature of 4 K and has the ability to null the ambient magnetic field to below 100 nT, which is important for measuring superconducting circuits with the wafer prober.
Robust maturation of cryogenic electronics has been limited by the lack of high-throughput measurement capabilities, especially for electronics that operate at 4 K. Automated on-wafer probing to characterize the dc and RF performance of components and complete circuits has been a critical element in the development of room temperature electronics. We report here the development of a fully automated wafer prober that operates with the wafer cooled to a temperature of 4 K and has the ability to null the ambient magnetic field to below 100 nT, which is important for measuring superconducting circuits with the wafer prober.
Using a fully automated cryogenic wafer prober, we measured superconductor fabrication process control monitors and simple integrated circuits on 200-mm wafers at 4.4 K, including SQIF-based magnetic field sensors, SQUID-based circuits for measuring inductors, Nb/Al-AlOx/Nb Josephson junctions, test structures for measuring critical current of superconducting wires and vias, resistors, etc., to demonstrate the feasibility of using the system for characterizing niobium superconducting devices and integrated circuits on a wafer scale. Data on the wafer-scale distributions of the residual magnetic field, junction tunnel resistance, energy gap, inductance of multiple Nb layers, and critical currents of interlayer vias are presented. A comparison with existing models is made. The wafers were fabricated in the SFQ5ee process, the fully planarized process with eight niobium layers and a layer of kinetic inductors, developed for superconductor electronics at MIT Lincoln Laboratory, Lexington, MA, USA. The cryogenic wafer prober was developed at HPD/FormFactor, Inc., Boulder, CO, USA.
Using a fully automated cryogenic wafer prober, we measured superconductor fabrication process control monitors and simple integrated circuits on 200 mm wafers at 4.2 K, including Nb/Al-AlOx/Nb Josephson junctions, SQUID-based circuits for measuring inductors, test structures for measuring critical current of superconducting wires and vias, resistors, etc., to demonstrate the feasibility of using the system for characterizing niobium superconducting devices and integrated circuits on a wafer scale. The data on the wafer-scale distributions of the junction tunnel resistance, energy gap, inductance of Nb layers, critical currents of interlayer vias are presented. The wafers were fabricated in the SFQ5ee process, the fully planarized process with eight niobium layers and a layer of kinetic inductors, developed for superconductor electronics at MIT Lincoln Laboratory. The cryogenic wafer prober was developed at HPD/ FormFactor, Inc.
Fast feedback from cryogenic electrical characterization measurements is key for the development of scalable quantum computing technology. At room temperature, high-throughput device testing is accomplished with a probe-based solution, where electrical probes are repeatedly positioned onto devices for acquiring statistical data. In this work, we present a probe station that can be operated from room temperature down to below 2 K. Its small size makes it compatible with standard cryogenic measurement setups with a magnet. A large variety of electronic devices can be tested. Here, we demonstrate the performance of the prober by characterizing silicon fin field-effect transistors as a host for quantum dot spin qubits. Such a tool can massively accelerate the design-fabrication-measurement cycle and provide important feedback for process optimization toward building scalable quantum circuits.
An automated measurement system for cryogenic wafer probing is described. The system has been designed for up to four simultaneous broadband on-chip measurements in the temperature range from 4 to 300 K. Special requirements for superconducting samples have been taken into consideration. Most of the measurements needed for characterization of superconducting thin films and circuits can be done with a high degree of precision in the low- and high-frequency region. Details of the design are presented and the system performance is discussed.
Coulomb blockade thermometers (CBTs) have attracted more interest in recent years, as the demand for sub-one Kelvin thermometry has increased, especially due to the prevalence of dilution refrigerators in research and applications in quantum technology. CBTs can be operated both as a primary thermometer, requiring no prior calibration, or as a simple resistance thermometer in the secondary mode after calibration. As new scalable fabrication processes for quantum devices and cryogenic electronics are being developed, cryogenic wafer characterization methods must also scale up to provide statistical data on device parameters. Currently, characterization throughput of cryogenic devices is limited by the turnover time and sample capacity of traditional cryostats, where a measurement cycle for only a few devices can take several days. In this work, we demonstrate wafer-scale cryogenic characterization of a recently developed TiW/Al-AlOx/TiW normal-metal tunnel junction technology using CBTs. Measurements performed in a 300 mm cryogenic wafer prober (CWP) show on-chip electron temperatures below 700 mK across a full 150 mm wafer, as determined by primary thermometry. These results establish wafer-level testing below 1 K as a viable approach for large-scale cryogenic characterization of electrical devices, opening a pathway toward high-throughput screening of quantum devices and direct wafer-scale characterization of aluminum-based superconducting circuits.
Integrated semiconductor circuits operating at cryogenic temperatures can play a crucial role in scaling quantum computing architectures based on trapped-ion and superconducting qubits. Other technologies, such as low-temperature detectors, can also benefit significantly from these circuits. These applications demand high-frequency, cryogenic temperature measurement systems for the thorough characterization of semiconductor components and circuits. This work presents a customizable, high-frequency, fast, and reliable cryogenic measurement setup for measurement temperatures ranging from room temperature to 4.2 K. It features up to two dc probes or two ground-signal-ground probes for frequencies of up to 67 GHz, which can be configured in a 180° or 90° configuration. In addition, up to 48 BeCu wires configured as twisted pairs provide supply and control signals. Furthermore, up to four rf connections can be mounted directly to a printed circuit board. The setup features an optical microscope in the vacuum chamber to position the probes, which is further utilized by a machine vision algorithm, allowing the detection of pads and automatic positioning of the probes over the pads. The hardware is located in a 550 × 500 × 500 mm3 large vacuum chamber with two independent pulse tube cryocoolers with cooling powers of up to 0.9 and 0.4 W at 4.2 K. Exemplary room temperature and cryogenic S-parameter, transient frequency (fT), time-domain, capacitance-voltage, and dc measurements of single transistors and integrated circuits fabricated by Infineon are presented, demonstrating the system's measurement capability for quantum computing and other applications.