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Optics Letters

Resonant energy transfer between rare earth atomic layers in nanolaminate films

Kang Long Yuan, Yao Liu, Zhongtao Ouyang, jianzhao liu, Yang Yang, Jiaming Sun

Published Aug 29, 2022• 7 citations
Publisher

Abstract

Förster resonant energy transfer between atoms separated at a distance of a few nanometers has strong relevance to different properties of matter. In this work, the resonant energy transfer rate is derived from the electric potential in a system with one dipole interacting with a separated 2D plane of dipoles. It shows an R − 2 ( R : distance between dipole and 2D plane of dipoles) dependency on the distance of dipole layers, which is different from previous theoretical evaluations with an R − 4 dependency. The electroluminescence (EL) properties are studied in different rare earth (Re: Tm, Tb, Ho, Yb, Er) distributed single atomic layer doped Al 2 O 3 nanolaminates prepared by atomic layer deposition, in which the distance between single atomic layers of Re 3+ is modulated at the atomic scale. Our theoretical results are consistent with the changes of EL intensity and decay time with the distance between the single atomic rare earth doping layers. This result is crucial for increasing the accuracy in biosensing and design of photonic materials.

DOI
10.1364/ol.469273

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Förster resonant energy transfer between atoms separated at a distance of a few nanometers has strong relevance to different properties of matter. In this work, the resonant energy transfer rate is derived from the electric potential in a system with one dipole interacting with a separated 2D plane of dipoles. It shows an R − 2 ( R : distance between dipole and 2D plane of dipoles) dependency on the distance of dipole layers, which is different from previous theoretical evaluations with an R − 4 dependency. The electroluminescence (EL) properties are studied in different rare earth (Re: Tm, Tb, Ho, Yb, Er) distributed single atomic layer doped Al 2 O 3 nanolaminates prepared by atomic layer deposition, in which the distance between single atomic layers of Re 3+ is modulated at the atomic scale. Our theoretical results are consistent with the changes of EL intensity and decay time with the distance between the single atomic rare earth doping layers. This result is crucial for increasing the accuracy in biosensing and design of photonic materials.
The use of rare earth ions (REIs)—typically embedded as atomic defects in solids—has emerged as a promising strategy for practical quantum memories. In particular, the Er ion has garnered significant attention due to its telecom C-band optical transition, which makes it a suitable candidate for integration into existing optical fiber networks without the need for photon wavelength conversion. However, successful scalability of such a quantum memory platform would benefit greatly from employing a host material that is fully compatible with silicon and modern CMOS fabrication processes. In this study, we present the synthesis of Er-doped TiO2 thin films directly on standard silicon or silicon-on-insulator (SOI) substrates using atomic layer deposition (ALD). Our thin film exhibits favorable emitter properties at cryogenic temperatures (T = 3.5 K), including a narrow inhomogeneous linewidth and optical lifetime approaching that of bulk values. Additionally, the ALD process provides ample opportunities for device fabrication and integration with other components, further enhancing its potential for practical applications. Overall, our findings suggest that Er-doped TiO2 thin films synthesized via ALD represent a promising approach for developing practical quantum memories that can be seamlessly integrated with silicon photonics. This work lays a foundation for the development of quantum technologies with potential applications in communication, computing, and cryptography.
This report summarizes research carried out to investigate energy transfer in an activator-activator system; that is a system for which energy transfer is reversible between certain metastable levels and for which stimulated emission from each of these levels can be generated. The specific system investigated is Er-Ho:YLF. Laser operation from two different ions in the same solid state host has been demonstrated. The 750nm (5S(2) - 5I(7):Ho) and 850nm (4S(3/2) - 4I(13/2:Er) transitions were observed simultaneously and separately at 77K. Cross transfer between the S levels was also observed and the cross transfer rates measured in crystals of five different compositions. Cross transfer between the S levels is mitigated by other cross relaxation transfer schemes which quench the S level storage time of each ion. Only about 25% of the initial population of one ion is transferred to the other in the optimum concentration, 2%Ho-2%Er, at room temperature. The cross transfer rate is only weakly temperature and concentration dependent; at low temperatures cross transfer is somewhat more effective as the decay rates of each ion are longer.
The interaction between light and matter is fundamental to developments in quantum optics and information. Over recent years enormous progress has been made in controlling the interface between light and single emitters including ions, atoms, molecules, quantum dots and ensembles. For many systems, inter-particle interactions are typically negligible. However, if the emitters are separated by less than the emission wavelength, resonant dipole--dipole interactions modify the radiative decay rate and induce a splitting or shift of the resonance. Here we map out the transition between individual dipoles and a strongly interacting ensemble by increasing the density of atoms confined in a layer with thickness much less than the emission wavelength. We find two surprising results: whereas for a non-interacting ensemble the opacity increases linearly with atomic density, for an interacting ensemble the opacity saturates, i.e., a thin dipolar layer never becomes opaque regardless of how many scatterers are added. Secondly, the relative phase of the dipoles produces an abrupt change in the optical transmission around the thickness λ/4.
Calculations made of the rates for several processes involving interactions between rare earth ions in crystals, such as resonance energy transfer, cooperative excitation transfer and cooperative optical transitions. These processes are assumed to originate from the electric multipole interactions between the ions concerned. A tensor operator method is employed in order to take account of the individual characters of the energy levels involved in the transition. Evaluation of the typical transition probability is also made on the lowest-order parity-allowed processes in nearest neighbour ions. The rates for the resonance transfer and cooperative transfer processes thus estimated are much smaller than those obtained by Miyakawa and Dexter.
Earlier an idea to use controlled with modern Scanning Probe Microscopy (SPM) technique resonant interaction of dipoles (fluorescent rare earth (RE) ions in crystals) was put forward. Here we discuss the possibility to exploit nanolocal Stark effect, caused in such systems by strong inhomogeneous electric fields of sharp SPM electrodes (tips), to engineer the dark - bright states of resonantly interacting dipoles: their energies and decay (decoherence) rates can be strongly influenced by such fields.