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Quantum 2.0 Conference and Exhibition

Integrated Photon-pair Sources on a 3C-SiC-on-insulator Platform

Jiayang Li, Andrew W. O. Poon

Published Jan 1, 2022• 0 citations
Publisher

Abstract

Silicon carbide (SiC) polytypes are emerging integrated second-order nonlinear and quantum photonic platforms. We demonstrate on a 3C-SiC-on-insulator platform photon-pair generation through spontaneous parametric down-conversion in the 1550nm wavelengths from an elliptical microring resonator.
DOI
10.1364/quantum.2022.qtu4b.6

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3C-silicon carbide-on-insulator (3C-SiCOI) is an emerging photonic platform for integrated quantum photonics due to its moderate second- and third-order optical nonlinearities, wide bandgap energy, and compatibility with silicon complementary metal-oxide-semiconductor technologies. In this work, we report our progress in photon-pair generation and quantum state manipulation on the 3C-SiCOI platform. We demonstrate the generation of photon pairs through the spontaneous parametric down-conversion process using modal phase-matching in an elliptical microring resonator on this platform. We will present the design principle and recent progress of our experimental work.
4H silicon carbide, as a silicon-based nonlinear optical material platform, exhibits a large bandgap energy, a wide transparent window and moderate second- and third-order optical nonlinearities. The availability of chip-based visible-wavelength nonlinear and quantum light sources pave the way for quantum communications as well as bio-, atomic-, and molecular-related nonlinear and quantum photonic devices and applications on a chip. Microring resonators on the 4H-SiC- on-insulator platform are ideal for efficiently generating nonlinear and quantum light sources integrated with large-scale photonic integrated circuits. In this work, we report our progress in demonstrating such quantum light sources in the visible/near-infrared wavelengths through spontaneous parametric down-conversion in 4H-SiCOI microring resonators utilizing the type-II phase matching.
Entangled photon sources are fundamental building blocks for quantum communication and quantum networks. Recently, silicon carbide emerged as a promising material for integrated quantum devices since it is CMOS compatible with favorable mechanical, electrical and photonic properties. In this work, we report the progress on the entangled photon pair generation at the telecom wavelength (1550 nm), which is achieved by implementing the spontaneous four-wave mixing process in a compact silicon carbide microring resonator. We will present the design principle, experimental set-up, and results of this work.
Abstract Entanglement plays a vital role in quantum information processing. Owing to its unique material properties, silicon carbide recently emerged as a promising candidate for the scalable implementation of advanced quantum information processing capabilities. To date, however, only entanglement of nuclear spins has been reported in silicon carbide, while an entangled photon source, whether it is based on bulk or chip-scale technologies, remains elusive. Here, we report the demonstration of an entangled photon source in an integrated silicon carbide platform for the first time. Specifically, strongly correlated photon pairs are efficiently generated at the telecom C-band wavelength through implementing spontaneous four-wave mixing in a compact microring resonator in the 4H-silicon-carbide-on-insulator platform. The maximum coincidence-to-accidental ratio exceeds 600 at a pump power of 0.17 mW, corresponding to a pair generation rate of 9×10 3 pairs/s. Energy-time entanglement is created and verified for such signal-idler photon pairs, with the two-photon interference fringes exhibiting a visibility larger than 99%. The heralded single-photon properties are also measured, with the heralded g (2) (0)on the order of 10 -3 , demonstrating the SiC platform as a prospective fully integrated, CMOS-compatible single-photon source for quantum applications.