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Entangled photon pair generation in an integrated SiC platform

Lijun Ma, Ruixuan Wang, Jingwei Li, Xiao Hong Tang, Thomas Gerrits, Qing Li, Oliver Slattery, Anouar Rahmouni

Published Jan 15, 2024• 1 citation
Publisher

Abstract

Abstract Entanglement plays a vital role in quantum information processing. Owing to its unique material properties, silicon carbide recently emerged as a promising candidate for the scalable implementation of advanced quantum information processing capabilities. To date, however, only entanglement of nuclear spins has been reported in silicon carbide, while an entangled photon source, whether it is based on bulk or chip-scale technologies, remains elusive. Here, we report the demonstration of an entangled photon source in an integrated silicon carbide platform for the first time. Specifically, strongly correlated photon pairs are efficiently generated at the telecom C-band wavelength through implementing spontaneous four-wave mixing in a compact microring resonator in the 4H-silicon-carbide-on-insulator platform. The maximum coincidence-to-accidental ratio exceeds 600 at a pump power of 0.17 mW, corresponding to a pair generation rate of 9×10 3 pairs/s. Energy-time entanglement is created and verified for such signal-idler photon pairs, with the two-photon interference fringes exhibiting a visibility larger than 99%. The heralded single-photon properties are also measured, with the heralded g (2) (0)on the order of 10 -3 , demonstrating the SiC platform as a prospective fully integrated, CMOS-compatible single-photon source for quantum applications.

DOI
10.21203/rs.3.rs-3069754/v2

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Abstract Entanglement plays a vital role in quantum information processing. Owing to its unique material properties, silicon carbide recently emerged as a promising candidate for the scalable implementation of advanced quantum information processing capabilities. To date, however, only entanglement of nuclear spins has been reported in silicon carbide, while an entangled photon source, whether it is based on bulk or chip-scale technologies, remains elusive. Here, we report the demonstration of an entangled photon source in an integrated silicon carbide platform for the first time. Specifically, strongly correlated photon pairs are efficiently generated at the telecom C-band wavelength through implementing spontaneous four-wave mixing in a compact microring resonator in the 4H-silicon-carbide-on-insulator platform. The maximum coincidence-to-accidental ratio exceeds 600 at a pump power of 0.17 mW, corresponding to a pair generation rate of 9×10 3 pairs/s. Energy-time entanglement is created and verified for such signal-idler photon pairs, with the two-photon interference fringes exhibiting a visibility larger than 99%. The heralded single-photon properties are also measured, with the heralded g (2) (0)on the order of 10 -3 , demonstrating the SiC platform as a prospective fully integrated, CMOS-compatible single-photon source for quantum applications.
Abstract Entanglement plays a vital role in quantum information processing. Owing to its unique material properties, silicon carbide recently emerged as a promising candidate for the scalable implementation of advanced quantum information processing capabilities. To date, however, only entanglement of nuclear spins has been reported in silicon carbide, while an entangled photon source, whether it is based on bulk or chip-scale technologies, has remained elusive. Here, we report the demonstration of an entangled photon source in an integrated silicon carbide platform for the first time. Specifically, strongly correlated photon pairs are efficiently generated at the telecom C-band wavelength through implementing spontaneous four-wave mixing in a compact microring resonator in the 4H-silicon-carbide-on-insulator platform. The maximum coincidence-to-accidental ratio exceeds 600 at a pump power of 0.17 mW, corresponding to a pair generation rate of (9 ± 1) × 10 3 pairs/s. Energy-time entanglement is created and verified for such signal-idler photon pairs, with the two-photon interference fringes exhibiting a visibility larger than 99%. The heralded single-photon properties are also measured, with the heralded g (2) (0) on the order of 10 −3 , demonstrating the SiC platform as a prospective fully integrated, complementary metal-oxide-semiconductor compatible single-photon source for quantum applications.
Abstract Entanglement plays a vital role in quantum information processing. Owing to its unique material properties, silicon carbide recently emerged as a promising candidate for the scalable implementation of advanced quantum information processing capabilities. To date, however, in silicon carbide only entanglement of nuclear spins has been reported, while an entangled photon source, whether it is based on bulk or chip-scale technologies, remains elusive. Here, we report the first demonstration of an entangled photon source in an integrated silicon carbide platform. Specifically, strongly correlated photon pairs are efficiently generated at the telecom C-band wavelength through implementing spontaneous four-wave mixing in a compact microring resonator in the 4H-silicon-carbide-on-insulator platform. Energy-time entanglement is created and verified for such signal-idler photon pairs, with the two-photon interference fringes exhibiting a visibility larger than 99%. The heralded single-photon properties are also measured, with the heralded g (2) (0) on the order of 10 − 3 , demonstrating the CMOS-compatible integrated platform as a prospective fully integrated CMOS-compatible single-photon source for quantum applications.
Entangled photon sources are fundamental building blocks for quantum communication and quantum networks. Recently, silicon carbide emerged as a promising material for integrated quantum devices since it is CMOS compatible with favorable mechanical, electrical and photonic properties. In this work, we report the progress on the entangled photon pair generation at the telecom wavelength (1550 nm), which is achieved by implementing the spontaneous four-wave mixing process in a compact silicon carbide microring resonator. We will present the design principle, experimental set-up, and results of this work.
Abstract Silicon carbide (SiC) polytypes are emerging for integrated nonlinear and quantum photonics due to their wide-bandgap energies, second-order optic nonlinearity and process compatibility with complementary metal-oxide-semiconductor technologies. Among polytypes, 3C-SiC is the only one epitaxially grown on wafer-scale silicon substrates. However, on-chip nonlinear and quantum light sources leveraging the second-order nonlinearity of 3C-SiC have not been reported to our knowledge. Here, we design and fabricate an elliptical microring on 3C-SiC. We demonstrate a nonlinear light source with a second-harmonic generation efficiency of 17.4±0.2%W−117.4\pm 0.2 \% {W}^{-1}17.4±0.2%W−1 17.4 ± 0.2 % W − 1 and difference-frequency generation with a signal-idler bandwidth of 97 nm. We demonstrate a spontaneous parametric down-conversion source with a photon-pair generation rate of 4.8 MHz and a coincidence-to-accidental ratio of 3361±843361\pm 843361±84 3361 ± 84 . We measure a low heralded single-photon second-order coherence gH(2)=0.0007{g}_{H}^{\left(2\right)}=0.0007gH(2)​=0.0007 g H 2 = 0.0007 . We observe time-bin entanglement with a visibility of 86.0±2.4%86.0\pm 2.4 \%86.0±2.4% 86.0 ± 2.4 % using this source. Our work paves a way toward SiC-based on-chip nonlinear and quantum photonic circuits.
We present the design of an on-chip integrated photon pair source based on Spontaneous Four Wave Mixing (SFWM), implemented on a ring resonator in the 4H Silicon Carbide On Insulator (4H-SiCOI) platform, compatible with a solid state quantum memory in the telecommunications band. Through careful engineering of the waveguide dispersion and micro-ring resonator dimensions, we found solutions where the signal photons are emitted at 1536.48 nm with a bandwidth of ∼150\sim 150∼150 MHz, enabling the interaction with the hyperfine structure of Er 3+^{3+}3+ ions. Simultaneously, the idler photons are generated at 1563.86 nm, matching the central wavelength of a specific channel in a commercial dense wavelength division multiplexing system. The proposed device fulfill all the spectral requirements in a simple ring-bus coupled waveguide configuration with design parameters within the range of reported values for similar resonators, making feasible its manufacturing with current fabrication capabilities.