Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Microfabricated ion trap chip with an integrated microwave antenna

Christopher Nordquist

Published Jan 23, 2023• 0 citations
OpenAlex

Abstract

An ion trap chip, which may be used for quantum information processing and the like, includes an integrated microwave antenna. The antenna is formed as a radiator connected by one of its ends to the center trace of a microwave transmission line and connected by its other end to a current return path through a ground trace of the microwave transmission line. The radiator includes several parallel, coplanar radiator traces connected in series. The radiator traces are connected such that they all carry electric current in the same direction, so that collectively, they simulate a single, unidirectionally flowing sheet of current. In embodiments, induced currents in underlying metallization planes are suppressed by parallel slots that extend in a direction perpendicular to the radiator traces.

Related papers

Ion trapping for quantum information processing

Christopher Nordquist

A platform for trapping atomic ions includes a substrate and a plurality of metallization layers that overlie the substrate. The metallization layer farthest from the substrate is a top layer patterned with electrostatic control trap electrodes and radio-frequency trap electrodes. Another metallization layer is a microwave layer patterned to define a microwave circuit. The microwave layer lies below the top layer. The microwave circuit is adapted to generate, in use, a microwave magnetic field above the electrostatic control and radio-frequency trap electrodes. The top metallization layer includes slots that, in use, are penetrated by microwave energy from the microwave circuit.

•Jan 23, 2023•0 citations

A 90 GHz SINIS Detector With 2 GHz Readout

Aleksandra A. Gunbina, Sumedh Mahashabde, Michael A. Tarasov +8 more

A superconductor-insulator-normal metal-insulator-superconductor (SINIS) detector integrated in a planar 90 GHz band twin-slot antenna with a 2 GHz superconducting resonator readout was fabricated and experimentally studied. In order to achieve high pixel count, the traditional dc readout of the SINIS detector is replaced by NbN coplanar 13.850 mm long superconducting resonator. SINIS detectors have traditionally dc Junction Field Effect Transistor (JFET) room-temperature readout. Such readout requires individual wiring for each pixel, while the microwave readout is far less cluttered as only one coaxial line is needed for hundreds of devices. Such readout operates similar to frequency domain multiplexing (FDM) for microwave kinetic inductance detectors (MKID). The planar twin slot antenna has two parallel slots in a metal ground plane which are excited coherently by short sections of a coplanar waveguide (CPW) line with a SINIS detector at the center. One section of the CPW is extended past the slot in a long superconducting section which functions as a quarter wavelength resonator. This resonator is short circuited to the ground plane at the far end, with the expected open circuited end terminated by the SINIS detector in the antenna. We measured the response of sample to black body radiation temperatures 6 K and 9 K. The corresponding dynamic resistance maximum drops from 50 kΩ down to 30 kΩ. An RF readout channel comprising a coplanar coupler and a coplanar resonator has a resonant frequency of 1.8 GHz. Unloaded Q factor (without incoming irradiation) is 200. The signal spectral characteristics and the response to the black body radiation have shown design values as expected.

IEEE Transactions on Applied Superconductivity•Mar 25, 2021•6 citations

Method of making an improved superconducting quantum interference device

Cheng-Teh Wu

An improved superconducting quantum interference device is made by sputtering a thin film of an alloy of three parts niobium to one part tin in a pattern comprising a closed loop with a narrow region, depositing a thin film of a radiation shield such as copper over the niobium-tin, scribing a narrow line in the copper over the narrow region, exposing the structure at the scribed line to radiation and removing the deposited copper.

•Jan 23, 2023•0 citations

Low-loss cable-to-cable parallel connection method for thin-film superconducting flexible microwave transmission lines

Simin Zou, Bhargav Yelamanchili, Vaibhav Gupta +4 more

Abstract We describe a superconducting (SC) cable-to-cable connection method for thin-film flexible (Nb/polyimide) parallel transmission line cables that exhibits low loss from DC to microwave frequencies. Design, fabrication procedures, assembly methods and characterization results are reported. The connector assembly incorporates a monolithic array of short superconductive bridging traces that function as a ganged electrical splice between two ribbon cables. The assembly is micro-mechanically self-aligned and uses pressure to make simultaneous electrical contacts between multiple 50 μ m wide microstrip signal traces, as well as between ground planes. Each contacting surface comprises thin SC Nb overcoated with ultra-thin Au, providing nearly zero DC resistance and very good RF performance. A simulation model of the microwave performance of microstrip-to-microstrip interconnections at 4.2 K was successfully matched to measurement results. This new cable-to-cable connection approach exhibited an insertion loss <0.12 dB and a return loss >15 dB up to 14 GHz. The connections performed reproducibly throughout multiple thermal cycles and multiple disassembly/reassembly cycles.

Superconductor Science and Technology•Apr 10, 2019•8 citations

Trapped ion platform with optical input and output

Lambert Paul Parazzoli

In disclosed apparatus, a plurality of optical waveguides monolithically integrated on a surface ion trap substrate deliver light to the trapping sites. Electrical routing traces defined in one or more metallization levels deliver electrical signals to electrodes of the surface electrode ion trap. A plurality of photodetectors are integrated on the substrate and arranged to detect light from respective trapping sites.

•Jan 23, 2023•0 citations

Microfabricated ion trap chip with in situ radio-frequency sensing

Peter Maunz

A radio-frequency (RF) surface ion trap chip includes an RF electrode and an integrated capacitive voltage divider in which an intermediate voltage node is capacitively connected between the RF electrode and a ground. A sensor output trace is connected to the intermediate voltage node.

•Jan 23, 2023•0 citations
An ion trap chip, which may be used for quantum information processing and the like, includes an integrated microwave antenna. The antenna is formed as a radiator connected by one of its ends to the center trace of a microwave transmission line and connected by its other end to a current return path through a ground trace of the microwave transmission line. The radiator includes several parallel, coplanar radiator traces connected in series. The radiator traces are connected such that they all carry electric current in the same direction, so that collectively, they simulate a single, unidirectionally flowing sheet of current. In embodiments, induced currents in underlying metallization planes are suppressed by parallel slots that extend in a direction perpendicular to the radiator traces.
A platform for trapping atomic ions includes a substrate and a plurality of metallization layers that overlie the substrate. The metallization layer farthest from the substrate is a top layer patterned with electrostatic control trap electrodes and radio-frequency trap electrodes. Another metallization layer is a microwave layer patterned to define a microwave circuit. The microwave layer lies below the top layer. The microwave circuit is adapted to generate, in use, a microwave magnetic field above the electrostatic control and radio-frequency trap electrodes. The top metallization layer includes slots that, in use, are penetrated by microwave energy from the microwave circuit.
A superconductor-insulator-normal metal-insulator-superconductor (SINIS) detector integrated in a planar 90 GHz band twin-slot antenna with a 2 GHz superconducting resonator readout was fabricated and experimentally studied. In order to achieve high pixel count, the traditional dc readout of the SINIS detector is replaced by NbN coplanar 13.850 mm long superconducting resonator. SINIS detectors have traditionally dc Junction Field Effect Transistor (JFET) room-temperature readout. Such readout requires individual wiring for each pixel, while the microwave readout is far less cluttered as only one coaxial line is needed for hundreds of devices. Such readout operates similar to frequency domain multiplexing (FDM) for microwave kinetic inductance detectors (MKID). The planar twin slot antenna has two parallel slots in a metal ground plane which are excited coherently by short sections of a coplanar waveguide (CPW) line with a SINIS detector at the center. One section of the CPW is extended past the slot in a long superconducting section which functions as a quarter wavelength resonator. This resonator is short circuited to the ground plane at the far end, with the expected open circuited end terminated by the SINIS detector in the antenna. We measured the response of sample to black body radiation temperatures 6 K and 9 K. The corresponding dynamic resistance maximum drops from 50 kΩ down to 30 kΩ. An RF readout channel comprising a coplanar coupler and a coplanar resonator has a resonant frequency of 1.8 GHz. Unloaded Q factor (without incoming irradiation) is 200. The signal spectral characteristics and the response to the black body radiation have shown design values as expected.
Abstract We describe a superconducting (SC) cable-to-cable connection method for thin-film flexible (Nb/polyimide) parallel transmission line cables that exhibits low loss from DC to microwave frequencies. Design, fabrication procedures, assembly methods and characterization results are reported. The connector assembly incorporates a monolithic array of short superconductive bridging traces that function as a ganged electrical splice between two ribbon cables. The assembly is micro-mechanically self-aligned and uses pressure to make simultaneous electrical contacts between multiple 50 μ m wide microstrip signal traces, as well as between ground planes. Each contacting surface comprises thin SC Nb overcoated with ultra-thin Au, providing nearly zero DC resistance and very good RF performance. A simulation model of the microwave performance of microstrip-to-microstrip interconnections at 4.2 K was successfully matched to measurement results. This new cable-to-cable connection approach exhibited an insertion loss <0.12 dB and a return loss >15 dB up to 14 GHz. The connections performed reproducibly throughout multiple thermal cycles and multiple disassembly/reassembly cycles.