The dynamics of electrons and holes in semiconductors and semiconductor heterostructures have been extensively discussed in the literature, and are governed by their mutual Coulomb interaction, by their interaction with lattice vibrations (phonons) and by their radiative recombination (for an overview see e.g. Ref. [1]). A powerful technique to study the carrier dynamics in semiconductors utilizes short optical pulses to photoexcite electrons from the valence to the conduction band (i.e. to create electron-hole pairs) that subsequently relax until the photon energy stored in the medium is dissipated and the system has recovered the thermal equilibrium. The dynamics of the carriers photoexcited by the short optical pulse can be followed by monitoring two main optical observables: the interband population difference and the induced polarization. Both quantities decay with time after the photoexcitation due to the carrier dynamics. While the induced polarization (which is an ensemble average over many photoexcited dipole moments) is sensitive to scattering events that break the phase relationship among the individual dipoles and/or with the light field creating them (dephasing processes), the population difference is sensitive only to events that change the energy state of the carriers. Transient coherent optical spectroscopy addresses the time-evolution of the induced polarization in the time-regime during and immediately following the photoexcitation by a short laser pulse, in which the photoexcited dipoles have retained a defined phase relationship among each other and with the exciting coherent radiation.
The dynamics of electrons and holes in semiconductors and semiconductor heterostructures have been extensively discussed in the literature, and are governed by their mutual Coulomb interaction, by their interaction with lattice vibrations (phonons) and by their radiative recombination (for an overview see e.g. Ref. [1]). A powerful technique to study the carrier dynamics in semiconductors utilizes short optical pulses to photoexcite electrons from the valence to the conduction band (i.e. to create electron-hole pairs) that subsequently relax until the photon energy stored in the medium is dissipated and the system has recovered the thermal equilibrium. The dynamics of the carriers photoexcited by the short optical pulse can be followed by monitoring two main optical observables: the interband population difference and the induced polarization. Both quantities decay with time after the photoexcitation due to the carrier dynamics. While the induced polarization (which is an ensemble average over many photoexcited dipole moments) is sensitive to scattering events that break the phase relationship among the individual dipoles and/or with the light field creating them (dephasing processes), the population difference is sensitive only to events that change the energy state of the carriers. Transient coherent optical spectroscopy addresses the time-evolution of the induced polarization in the time-regime during and immediately following the photoexcitation by a short laser pulse, in which the photoexcited dipoles have retained a defined phase relationship among each other and with the exciting coherent radiation.
Using laser pulses of duration comparable to semiconductor relaxation and dephasing times, the coherent phenomena common to two-level systems have been demonstrated in II-VI and III-V semiconductors. These light-matter interactions are characterized by electrons and holes in their initially excited states and/or a macroscopic polarization that persists after the excitation. A nonthermal carrier distribution was observed in bulk CdSe, demonstrating the extremely fast energy relaxation possible when carrier-LO-phonon scattering is included. Quantum-confined CdSe microcrystallites were then employed to limit the available decay avenues. The one and two-pair transitions were characterized, and using spectral hole-burning, energy relaxation was shown to be substantially slower than in bulk. Dipole dephasing remained very rapid. Persistent macroscopic polarization was demonstrated in semiconductors through pump and probe experiments conducted on time scales faster than the inverse linewidth of the exciton. In the first set of experiments, it was found that the exciton optical Stark shift deviates from that predicted by a steady-state theory. The shift is smaller than expected and lasts longer than the pump pulse. Both effects are explained by free evolution of the exciton's polarization. Transient exciton bleaching is observed and shown to be a result of adiabatic following. In a second study of coherent polarization, spectral oscillations at negative delay times were studied. Oscillations were measured in a wide variety of semiconductors, temporally preceding several different pump-probe phenomena. By comparison with a semiclassical theory, it was shown that spectral oscillations in the spectral region of the exciton are evidence of persistent exciton polarization. Oscillations in the band are due to four wave mixing of the pump and probe beams.
The availability of femtosecond pulses in the optical-frequency regime allows the study of coherent effects in the interaction between semiconductors and light. Because the properties of the exciting pulses become important ingredients in spectroscopy, the theoretical analysis must treat the complete time dependence of the system. For this purpose we use the semiconductor Bloch equations (SBE),1-3 which are the coupled equations of motion for the interband polarization and the electron and hole populations for an interacting electron-hole system in the random-phase approximation. The equations describe the electron-hole Coulomb attraction leading to excitonic features; they contain phasespace filling and band-gap renormalization effects, as well as the dipole interaction with the applied light field.
The coherent spin dynamics of resident carriers, electrons, and holes in semiconductor nanostructures is studied theoretically under the conditions of periodical optical excitation using short laser pulses and in an external magnetic field. The generation and dephasing of spin polarization in an ensemble of carrier spins, for which the relaxation time of individual spins exceeds the repetition period of the laser pulses, are analyzed. Accumulation of the spin polarization is manifested either as resonant spin amplification or as mode locking of carrier spin coherences. It is shown that both regimes have the same origin, while their appearance is determined by the optical pump power and the spread of spin precession frequencies in the ensemble.
In recent years, transient four-wave mixing (FWM) techniques have been used to investigate the dephasing times of non-equilibrium carriers in semiconductor heterostructures by monitoring the decay of the macroscopic polarization. Initially, this decay was measured by temporally-integrating the scattered FWM signal as a function of time delay between two (or more) pump pulses. More recently, the macroscopic polarization decay has been measured by time-resolving the FWM signal by cross correlating it with an ultrashort laser pulse via frequency up-conversion in a nonlinear crystal. When excitons with slightly different energies are excited, oscillations (or beats) have been observed both in the time-integrated FWM signal and in the time-resolved FWM signal. Such beats have been observed, for example, between light- and heavy-hole excitons and between excitons in wells of different widths. Both the spectral behavior1 of the time-integrated FWM signal and the temporal behavior2 of the time-resolved signal have been shown to allow the distinction between the polarization interference associated with two independent oscillators and the quantum beats associated with two coupled oscillators which share a common level. In addition, it has been demonstrated3 that the quantum beats produced by incident pulses with parallel polarizations are exactly out of phase (by π) with the beats produced by orthogonally polarized pulses. In each case1-3, the period and phase of the beats and the polarization of FWM signal were explained by using a six-level model, which excluded many-body effects, to describe the J=1/2 conduction and J=3/2 valence states. Within the last few months, however, it has been shown that a complete description of the polarization selection rules for the FWM signal requires excitation-induced dephasing4 or disorder-induced coupling of the σ + and σ – excitonic transitions5.
The three-dimensional confinement created by the ultrasmall semiconductor structures known as quantum dots greatly modifies the optical properties of the spatially localized carriers. These systems are presently of great interest to the research community, both for the improved understanding of the physics of confined structures, and for the potential applications of these systems to areas such as optoelectronics and quantum computing. Here, the techniques of transient coherent nonlinear optical spectroscopy are applied to the investigation of excitons confined within InAs/GaAs self-assembled quantum dots. These methods provide a powerful tool for the study of dynamic processes in these novel materials. The nonlinear measurements are based on the differential transmission experimental geometry, and utilize ultrafast pulsed lasers in order to temporally resolve the carrier dynamics after excitation. The experiments performed here are resonant with the ground state absorption of the quantum dots, as evidenced by comparison with the photoluminescence measurements which are used to characterize the sample. The incoherent relaxation dynamics of the population of photoexcited excitons are examined, allowing for a determination of both the lifetime of the excitons and the time scale for relaxation between the two polarization eigenstates of the system. The three-dimensional quantum confinement results in the suppression of these relaxation processes, as predicted. The use of coherent spectroscopic techniques allows for the first unambiguous demonstration of an optically-induced nonradiative Raman coherence in these quantum dots. Simultaneous excitation of both polarization states of the exciton results in a coherent superposition state, whose temporal evolution is observed through the homodyne-detection scheme. In these transient experiments, this is manifested as a beating in the nonlinear response, which allows us to directly measure the fine-structure splitting between the polarization states. Utilizing optical pulse shaping techniques, transient spectral hole burning is performed, which allows for the nonlinear response to be spectrally resolved. As expected for the strongly confined quantum dot excitons, the results show that diffusion among the localized states is not a significant effect. Temperature dependent measurements show that at elevated temperatures, extra dephasing processes, potentially related to acoustic phonon scattering, become important. Finally, this technique allows for the first direct observation of the induced absorption from the exciton to biexciton transition in these InAs quantum dots, and a measurement of the associated binding energy. These results lay the foundation for future studies in this material system, and for the possible development of quantum logic devices utilizing quantum dots.
Within the framework of light-semiconductor interaction and the Lutting-Kohn model for the semiconductor band structure, we theoretically studied the mechanism of the polarization switch with coherent transient features. The result shows, in the coherent limitation, when the pump pulse Ep and signal pulse Es are orthogonal polarized, the third order polarization P(3), with first order of Es and second order of |Ep|, approach to zero, due to the destructive quantum interference, which results in an ultrafast pump-signal relative polarization dependent P(3), therewith a polarization switch. The study also shows that, when the light interacts with semiconductors coherently, the polarization state of the light is transferred to the relative phase of the electron spin, rather than the electron spin itself. The population of the polarization eigenstate excited by the pump pulse, do not origin from the Coulomb force of electrons, and should not thought phenomenologically as the exciton characterized by light polarization. This population will dephase to real carriers population, i.e. electron with exact spin |↑> or |↓>, by losing phase coefficients of the polarization eigenstates, in an ultrashort quantum dephase time.