Using laser pulses of duration comparable to semiconductor relaxation and dephasing times, the coherent phenomena common to two-level systems have been demonstrated in II-VI and III-V semiconductors. These light-matter interactions are characterized by electrons and holes in their initially excited states and/or a macroscopic polarization that persists after the excitation. A nonthermal carrier distribution was observed in bulk CdSe, demonstrating the extremely fast energy relaxation possible when carrier-LO-phonon scattering is included. Quantum-confined CdSe microcrystallites were then employed to limit the available decay avenues. The one and two-pair transitions were characterized, and using spectral hole-burning, energy relaxation was shown to be substantially slower than in bulk. Dipole dephasing remained very rapid. Persistent macroscopic polarization was demonstrated in semiconductors through pump and probe experiments conducted on time scales faster than the inverse linewidth of the exciton. In the first set of experiments, it was found that the exciton optical Stark shift deviates from that predicted by a steady-state theory. The shift is smaller than expected and lasts longer than the pump pulse. Both effects are explained by free evolution of the exciton's polarization. Transient exciton bleaching is observed and shown to be a result of adiabatic following. In a second study of coherent polarization, spectral oscillations at negative delay times were studied. Oscillations were measured in a wide variety of semiconductors, temporally preceding several different pump-probe phenomena. By comparison with a semiclassical theory, it was shown that spectral oscillations in the spectral region of the exciton are evidence of persistent exciton polarization. Oscillations in the band are due to four wave mixing of the pump and probe beams.
Using laser pulses of duration comparable to semiconductor relaxation and dephasing times, the coherent phenomena common to two-level systems have been demonstrated in II-VI and III-V semiconductors. These light-matter interactions are characterized by electrons and holes in their initially excited states and/or a macroscopic polarization that persists after the excitation. A nonthermal carrier distribution was observed in bulk CdSe, demonstrating the extremely fast energy relaxation possible when carrier-LO-phonon scattering is included. Quantum-confined CdSe microcrystallites were then employed to limit the available decay avenues. The one and two-pair transitions were characterized, and using spectral hole-burning, energy relaxation was shown to be substantially slower than in bulk. Dipole dephasing remained very rapid. Persistent macroscopic polarization was demonstrated in semiconductors through pump and probe experiments conducted on time scales faster than the inverse linewidth of the exciton. In the first set of experiments, it was found that the exciton optical Stark shift deviates from that predicted by a steady-state theory. The shift is smaller than expected and lasts longer than the pump pulse. Both effects are explained by free evolution of the exciton's polarization. Transient exciton bleaching is observed and shown to be a result of adiabatic following. In a second study of coherent polarization, spectral oscillations at negative delay times were studied. Oscillations were measured in a wide variety of semiconductors, temporally preceding several different pump-probe phenomena. By comparison with a semiclassical theory, it was shown that spectral oscillations in the spectral region of the exciton are evidence of persistent exciton polarization. Oscillations in the band are due to four wave mixing of the pump and probe beams.
The coherent response of a semiconductor three-state system to one or two intense light pulses is investigated experimentally on a 100 fs time scale. Three experiments constitute this dissertation: observation of excitonic Rabi oscillations, measurement of two-exciton coupled Stark shifting, and an attempt to observe dark states. Basic concepts of time-resolved ultrafast semiconductor spectroscopy are explained, followed by an analysis of semiconductor two- and three-state systems. Pure two- and three-state dynamics are derived from first principles, followed by the development of the appropriate semiconductor Bloch equations (SBE). Two-color pump-probe, two-color pump-pump, and pump-pump-probe techniques are explained in the context of three-state semiconductor experiments. The experimental setup is explained in detail. Resonant two-color pump-probe measurements resulted in the first observation of multiple excitonic Rabi oscillations. The common conduction band shared by the light-hole and heavy-hole excitons of an InGaAs multiple quantum well allowed us to measure hh-exciton density (Rabi) oscillations by probing lh-exciton absorption. By studying the intensity dependence of the Rabi frequency, we showed the important role of many-body effects in renormalizing the dipole energy. The shared conduction band also causes the lh-exciton resonance to Stark shift when the hh exciton is Stark shifted. We measured a transient Stark shifting of both resonances due to virtual hh-exciton transitions. We observed that the ratio of the hh-exciton shift to lh-exciton shift was 2:1 at large pump-exciton detuning, as predicted from a simple three-state dressed exciton picture. For smaller detunings we saw an increase in the ratio and a redshift of the non-dipole coupled exciton state. Both of these observations are consistent with the most recent theories and experiments on excitonic Stark shifting. For strong near-resonant pumping of both lh- and hh-exciton transitions, an intervalence-band Raman-type coherence follows from the SBE that results in a transparent eigenstate (dark state) when both pumps are equally detuned from resonance. The existence of this coherence is well-known in atomic-optical systems, but has been elusive in semiconductors. Our inconclusive experimental result is presented along with an evaluation of experimental shortcomings. In brief, the expected change is absorption was too small to see.
In recent years, transient four-wave mixing (FWM) techniques have been used to investigate the dephasing times of non-equilibrium carriers in semiconductor heterostructures by monitoring the decay of the macroscopic polarization. Initially, this decay was measured by temporally-integrating the scattered FWM signal as a function of time delay between two (or more) pump pulses. More recently, the macroscopic polarization decay has been measured by time-resolving the FWM signal by cross correlating it with an ultrashort laser pulse via frequency up-conversion in a nonlinear crystal. When excitons with slightly different energies are excited, oscillations (or beats) have been observed both in the time-integrated FWM signal and in the time-resolved FWM signal. Such beats have been observed, for example, between light- and heavy-hole excitons and between excitons in wells of different widths. Both the spectral behavior1 of the time-integrated FWM signal and the temporal behavior2 of the time-resolved signal have been shown to allow the distinction between the polarization interference associated with two independent oscillators and the quantum beats associated with two coupled oscillators which share a common level. In addition, it has been demonstrated3 that the quantum beats produced by incident pulses with parallel polarizations are exactly out of phase (by π) with the beats produced by orthogonally polarized pulses. In each case1-3, the period and phase of the beats and the polarization of FWM signal were explained by using a six-level model, which excluded many-body effects, to describe the J=1/2 conduction and J=3/2 valence states. Within the last few months, however, it has been shown that a complete description of the polarization selection rules for the FWM signal requires excitation-induced dephasing4 or disorder-induced coupling of the σ + and σ – excitonic transitions5.
The dynamics of electrons and holes in semiconductors and semiconductor heterostructures have been extensively discussed in the literature, and are governed by their mutual Coulomb interaction, by their interaction with lattice vibrations (phonons) and by their radiative recombination (for an overview see e.g. Ref. [1]). A powerful technique to study the carrier dynamics in semiconductors utilizes short optical pulses to photoexcite electrons from the valence to the conduction band (i.e. to create electron-hole pairs) that subsequently relax until the photon energy stored in the medium is dissipated and the system has recovered the thermal equilibrium. The dynamics of the carriers photoexcited by the short optical pulse can be followed by monitoring two main optical observables: the interband population difference and the induced polarization. Both quantities decay with time after the photoexcitation due to the carrier dynamics. While the induced polarization (which is an ensemble average over many photoexcited dipole moments) is sensitive to scattering events that break the phase relationship among the individual dipoles and/or with the light field creating them (dephasing processes), the population difference is sensitive only to events that change the energy state of the carriers. Transient coherent optical spectroscopy addresses the time-evolution of the induced polarization in the time-regime during and immediately following the photoexcitation by a short laser pulse, in which the photoexcited dipoles have retained a defined phase relationship among each other and with the exciting coherent radiation.
The three-dimensional confinement created by the ultrasmall semiconductor structures known as quantum dots greatly modifies the optical properties of the spatially localized carriers. These systems are presently of great interest to the research community, both for the improved understanding of the physics of confined structures, and for the potential applications of these systems to areas such as optoelectronics and quantum computing. Here, the techniques of transient coherent nonlinear optical spectroscopy are applied to the investigation of excitons confined within InAs/GaAs self-assembled quantum dots. These methods provide a powerful tool for the study of dynamic processes in these novel materials. The nonlinear measurements are based on the differential transmission experimental geometry, and utilize ultrafast pulsed lasers in order to temporally resolve the carrier dynamics after excitation. The experiments performed here are resonant with the ground state absorption of the quantum dots, as evidenced by comparison with the photoluminescence measurements which are used to characterize the sample. The incoherent relaxation dynamics of the population of photoexcited excitons are examined, allowing for a determination of both the lifetime of the excitons and the time scale for relaxation between the two polarization eigenstates of the system. The three-dimensional quantum confinement results in the suppression of these relaxation processes, as predicted. The use of coherent spectroscopic techniques allows for the first unambiguous demonstration of an optically-induced nonradiative Raman coherence in these quantum dots. Simultaneous excitation of both polarization states of the exciton results in a coherent superposition state, whose temporal evolution is observed through the homodyne-detection scheme. In these transient experiments, this is manifested as a beating in the nonlinear response, which allows us to directly measure the fine-structure splitting between the polarization states. Utilizing optical pulse shaping techniques, transient spectral hole burning is performed, which allows for the nonlinear response to be spectrally resolved. As expected for the strongly confined quantum dot excitons, the results show that diffusion among the localized states is not a significant effect. Temperature dependent measurements show that at elevated temperatures, extra dephasing processes, potentially related to acoustic phonon scattering, become important. Finally, this technique allows for the first direct observation of the induced absorption from the exciton to biexciton transition in these InAs quantum dots, and a measurement of the associated binding energy. These results lay the foundation for future studies in this material system, and for the possible development of quantum logic devices utilizing quantum dots.
Excitons, the bound states of an electron and a hole, in semiconductors are interesting
objects and they continue to attract attention of researchers from all over the world. Despite intense research on exciton physics over last three-four
decades, many interesting phenomena related to the dynamics and the nonlinear optical
properties of excitons in semiconductors and their nanostructures in the coherent and
incoherent regimes are still to be explored. This thesis presents our effort to study the
nonlinear optical properties as well as the exciton dynamics in coherent and incoherent
regime in semiconductor nanostructures including GaAs quantum wells (QWs) and InAs
quantum dots (QDs).
We have set up several time-resolved and steady-state optical spectroscopic measurement
techniques in our laboratory to carry out our study on excitons dynamics in
semiconductor QWs and QDs. We work out a clear and detailed theory of the pump-probe signal taking account of all aspect of the measurement, namely,
the lock-in detection, spectral selection by the monochromator and time-integration at
the slow photodetector. We have used the formalism of optical Bloch equations conventionally
used to analyse wave mixing experiments. Our analysis puts the pump-probe
technique on the same footing as the wave mixing experiments. We show that pumpprobe
experiments can be used to study both coherent and incoherent dynamics. We
also present a clear physical picture of the measured signal using the Lorentz harmonic
oscillator model.
We report the investigation of the coherent exciton dephasing dynamics using pumpprobe
reflectivity measurement in GaAs QWs for resonant excitation. Two GaAs/AlGaAs
QWs with well thicknesses 8 nm and 17.5 nm are used. We found a strong dependence of
the dephasing rate of the excitons with increasing exciton density due to exciton-exciton
scattering. We found that the exciton dephasing rate of 8 nm QWs at low excitation density
and at low lattice temperature is larger than the corresponding dephasing rate of the
17.5 nm QWs, possibly due to larger effect of inhomogeneous broadening. We also report
that the dephasing rates for both QWs are linear with the sample temperature below the
30 K.
We report the study of ionization equilibrium between the exciton and the electronhole
plasma population in the temperature and pressure (excitation density) phase space.
Non-resonant excitation of semiconductor creates a nonequilibrium state of electron-hole
plasma. We investigate this ionization equilibrium using steady state photoluminescence
and time-resolved excitation correlation PL measurements. We present a
clear phase diagram (in temperature and carrier density phase space) of this ionization process.A clear density-dependent increase in the ionization ratio is observed and its
connection with the Mott transition is discussed.
Semiconductor nanocrystals and QDs are another important area of research, mainly
due to their huge potential for device application. We present a simple
model which combines carrier loss kinetics, detailed balance principle in thermodynamic
equilibrium and Pauli exclusion principle to quantitatively explain the observed behaviour
of the experimental data.
Spectrally resolved and time-integrated degenerate four-wave mixing (FWM) experiments with ultra-short pulses have been used to investigate the relaxation times and coherent interactions of excitons in the Boltzmann and in the quantum kinetic regime in ZnSe single quantum wells.Three-pulse FWM experiments using 100 fs pulses in a 10 nm thick ZnSe/ZnMgSe single quantum well reveal nearly equal zero-density dephasing rates for coherences between + σ and - σ heavy-and/or light-hole exciton states as compared to the dephasing rate of the interband coherence between these states and the ground state.The measurements also demonstrate that exciton-exciton scattering destroys the phase coherence between heavy-and light-hole excitons about three times more effectively than the coherence between + σ and + σ heavy-hole excitons.The different coherent nonlinear signals obtained in a three-beam FWM experiment are explained and reproduced by numerical calculations of the optical Bloch equations for a ten-level model including excitation induced dephasing (EID).Two-beam FWM experiments using 30 fs pulses on a 10 nm ZnSe quantum well reveal marked quantum beats and a pronounced non-exponential decay for delay times smaller ~500 fs.The pronounced peak at pulse overlap is attributed to rapid destructive interference of the created polarization and to spin dependent quantum kinetic effects caused by the transient formation of an electron-hole (eh) pair grating.The three-beam FWM trace shows a bi-exponential decay which is attributed to a nonlinear polarization that is caused by the interaction of polarization 3 k with both an exciton grating and an eh-pair grating.Model calculations using the OBEs of a two level system that includes ∑ -+