This dissertation presents investigations of fundamental optical nonlinearities in semi-conductor microstructures. Two distinct effects are studied. In the first part the excitonic optical Stark effect in InGaAs and GaAs multiple quantum-well structures is investigated by means of pump-probe spectroscopy. For nonresonant excitation below the excitonic transition the direction of the shift of the resonance depends on the polarization of the pump and probe pulses. In particular, for anti-circular polarization a surprising red-shift is observed. For resonant excitation, induced absorption energetically above and below the exciton transition and bleaching of the resonance is found. Experiments using both resonant and nonresonant excitation reveal the importance of bound and unbound two-exciton states in absorption changes of the 1s heavy-hole exciton resonance. It is found that higher-order Coulomb contributions determine the intensity as well as the time dependence of the differential excitonic absorption. In addition, the influence of light-hole excitons is analyzed. It is shown that the direction of the optical Stark shift for nonresonant excitation depends also sensitively on the heavy-hole to light-hole splitting and the detuning of the pump pulse. For very high pump intensities and nonresonant excitation the absorption is split when a circularly polarized pump and a linearly polarized probe beam are used. For co-circular excitation traces of hyper-Raman gain are observed. In the second part of this dissertation, the nonlinear optical response of semiconductor microcavities in the nonperturbative regime is studied in resonant single-beam transmission and pump-probe experiments. In both types of experiment, a pronounced third transmission peak lying spectrally between the two normal modes is observed. Its dependence on the probe intensity, pump intensity, pump-probe delay, exciton-cavity detuning and pump detuning is investigated. For single-beam transmission, the energy of the third peak parallels the position of the cavity resonance. It is more pronounced for circularly polarized excitation and lasts longer than the two normal modes. For pump-probe experiments, the third peak increases with decreasing probe intensity and increasing pump intensity. Its energy is close to the low-energy side of the pump spectrum and virtually unaffected by the cavity-exciton detuning. The appearance of the third peak requires temporal overlap of pump and probe pulses. The origin of this complex nonlinearity is the quantum nature of light, which induces intraband polarizations in the presence of a coherent driving field and a finite carrier density. It is found that the coupling of the intraband polarizations via guided modes to the polarization of the fundamental longitudinal mode is responsible for the third transmission peak. A fully quantized theory reproduces the experimental observations.
This dissertation presents investigations of fundamental optical nonlinearities in semi-conductor microstructures. Two distinct effects are studied. In the first part the excitonic optical Stark effect in InGaAs and GaAs multiple quantum-well structures is investigated by means of pump-probe spectroscopy. For nonresonant excitation below the excitonic transition the direction of the shift of the resonance depends on the polarization of the pump and probe pulses. In particular, for anti-circular polarization a surprising red-shift is observed. For resonant excitation, induced absorption energetically above and below the exciton transition and bleaching of the resonance is found. Experiments using both resonant and nonresonant excitation reveal the importance of bound and unbound two-exciton states in absorption changes of the 1s heavy-hole exciton resonance. It is found that higher-order Coulomb contributions determine the intensity as well as the time dependence of the differential excitonic absorption. In addition, the influence of light-hole excitons is analyzed. It is shown that the direction of the optical Stark shift for nonresonant excitation depends also sensitively on the heavy-hole to light-hole splitting and the detuning of the pump pulse. For very high pump intensities and nonresonant excitation the absorption is split when a circularly polarized pump and a linearly polarized probe beam are used. For co-circular excitation traces of hyper-Raman gain are observed. In the second part of this dissertation, the nonlinear optical response of semiconductor microcavities in the nonperturbative regime is studied in resonant single-beam transmission and pump-probe experiments. In both types of experiment, a pronounced third transmission peak lying spectrally between the two normal modes is observed. Its dependence on the probe intensity, pump intensity, pump-probe delay, exciton-cavity detuning and pump detuning is investigated. For single-beam transmission, the energy of the third peak parallels the position of the cavity resonance. It is more pronounced for circularly polarized excitation and lasts longer than the two normal modes. For pump-probe experiments, the third peak increases with decreasing probe intensity and increasing pump intensity. Its energy is close to the low-energy side of the pump spectrum and virtually unaffected by the cavity-exciton detuning. The appearance of the third peak requires temporal overlap of pump and probe pulses. The origin of this complex nonlinearity is the quantum nature of light, which induces intraband polarizations in the presence of a coherent driving field and a finite carrier density. It is found that the coupling of the intraband polarizations via guided modes to the polarization of the fundamental longitudinal mode is responsible for the third transmission peak. A fully quantized theory reproduces the experimental observations.
The coherent response of a semiconductor three-state system to one or two intense light pulses is investigated experimentally on a 100 fs time scale. Three experiments constitute this dissertation: observation of excitonic Rabi oscillations, measurement of two-exciton coupled Stark shifting, and an attempt to observe dark states. Basic concepts of time-resolved ultrafast semiconductor spectroscopy are explained, followed by an analysis of semiconductor two- and three-state systems. Pure two- and three-state dynamics are derived from first principles, followed by the development of the appropriate semiconductor Bloch equations (SBE). Two-color pump-probe, two-color pump-pump, and pump-pump-probe techniques are explained in the context of three-state semiconductor experiments. The experimental setup is explained in detail. Resonant two-color pump-probe measurements resulted in the first observation of multiple excitonic Rabi oscillations. The common conduction band shared by the light-hole and heavy-hole excitons of an InGaAs multiple quantum well allowed us to measure hh-exciton density (Rabi) oscillations by probing lh-exciton absorption. By studying the intensity dependence of the Rabi frequency, we showed the important role of many-body effects in renormalizing the dipole energy. The shared conduction band also causes the lh-exciton resonance to Stark shift when the hh exciton is Stark shifted. We measured a transient Stark shifting of both resonances due to virtual hh-exciton transitions. We observed that the ratio of the hh-exciton shift to lh-exciton shift was 2:1 at large pump-exciton detuning, as predicted from a simple three-state dressed exciton picture. For smaller detunings we saw an increase in the ratio and a redshift of the non-dipole coupled exciton state. Both of these observations are consistent with the most recent theories and experiments on excitonic Stark shifting. For strong near-resonant pumping of both lh- and hh-exciton transitions, an intervalence-band Raman-type coherence follows from the SBE that results in a transparent eigenstate (dark state) when both pumps are equally detuned from resonance. The existence of this coherence is well-known in atomic-optical systems, but has been elusive in semiconductors. Our inconclusive experimental result is presented along with an evaluation of experimental shortcomings. In brief, the expected change is absorption was too small to see.
Summary form only given. Since the original discovery of the excitonic optical Stark effect, substantial progress has been made in the understanding of this ultrafast nonlinear optical effect. Recently, a red shift of the excitonic absorption line has been reported using low intensity excitation detuned 4.5 meV below the 1s-heavy-hole (hh) resonance and cross-circularly-polarized pulses. This was attributed to higher-order Coulomb correlations, interpretable as bound and unbound two-exciton states and memory effects. For co-circularly polarized pulses the well-known blue shift was found. Here we present a related effect occurring in the higher-intensity regime. Standard pump-probe experiments were performed on high-quality 8.5 nm-thick In/sub 0.04/Ga/sub 0.96/As multiple quantum well (MQW) samples.
This dissertation addresses both fundamental aspects of Coulomb correlations in semiconductor quantum wells and more practical aspects of theoretical analysis of semiconductor optoelectronic devices. After introducing the subject, we present and evaluate a state-of-the-art theory of the third order coherent optical response of a semiconductor quantum well based on the Dynamics Controlled Truncation (DCT) scheme. Already in the third order (the so-called chi (3)) regime, semiconductors exhibit a number of many-body Coulomb correlation effects. Their manifestation in various multi-pulse experimental configurations, customarily used in ultrafast semiconductor spectroscopy, has been an important component of this thesis. Coherent optical effects in a semiconductor 3-band system based on the heavy-hole, light-hole and conduction bands were investigated. The quantum beats in the time-integrated differential transmission signal were analyzed and compared with experimental data obtained at the University of Iowa. Fundamental differences from corresponding quantum beats in atomic 3-level systems were found. Also, the analysis of experimental data (obtained at the University of Arizona) of the coupled heavy-hole-light-hole optical Stark shift revealed evidence of intervalence band coherences, an analog of Raman coherences in atomic 3-levels systems. A scheme for realization of electromagnetically-induced transparency (EIT) based on the interference of excitonic and biexcitonic coherences was proposed. Corresponding experiments performed at the University of Oregon showed indeed a considerable coherent reduction of excitonic absorption. Furthermore, an extension of the chi(3) analysis revealed an energy renormalization of the biexciton, in good agreement with the corresponding experiment. A microscopic analysis of polarization dynamics in time-resolved four-wave mixing signals was performed, revealing interesting implications for the biexciton dephasing in addition to the significance of many-body correlations. In the case of four-wave mixing in semiconductor microcavities, our theoretical analysis in conjunction with experimental data obtained at the University of Tokyo gave us indications for a significant shortcoming of the second Born approximation (2nd BA) applied to two-exciton Coulomb correlations in a thin semiconductor quantum well, in agreement with the general knowledge of the qualitative failure of the 2nd BA in systems with short-range interaction in two dimensions. We also analyzed a novel all-optical switching technique based on the nonlinear polarization rotation. Apart from identifying the many-particle processes relevant for the switch operation in the chi(3) regime, we proposed ways to further optimize the switch.
The study of the nonlinear optical response of excitons in semiconductors is important for both scientific and technological applications. Although the nonlinear optical properties of bulk semiconductors and heterostructures have been studied for almost three decades, with most of the research focusing on heterostructures, the mechanisms leading to the nonlinearities in these systems are not completely understood. Determining these mechanisms and developing a theoretical picture which describes the most dominant effects remains a challenge and an active area of study. Although optical interactions in semiconductors is a genuine many-body problem, a description of this system similar to the optical Bloch equations used in atomic studies has shown some success, but more work is needed to make this model complete. Experimental work, particularly in the bulk system uncomplicated by the interface disorder present in heterostructures, will provide the guidance to extend this formalism. In this dissertation, the frequency domain resonant nonlinear optical response of excitons in bulk gallium arsenide at low density is studied to gain insight into the dominant mechanisms leading to the response, as well as the dynamics of the nominally three-dimensional excitonic system. Specifically, the nonlinear response was probed with differential transmission (DT) and four-wave mixing (FWM) experiments, which measure to lowest order the third-order susceptibility, $\chi\sp{(3)}.$ Using these various tools, three specific areas were studied and the results will be presented. First, the role of the biexciton, the state of two bound excitons, in determining the bulk nonlinear response was explored. The observation of a red-shifted nonlinear resonance suggests the importance of this state at moderate densities. Second, a new response, characterized by a resonant increase in exciton absorption induced by optical pumping with initial superlinear growth and a transition to behavior described by simple line broadening with increased pump intensity, was studied in detail. A model considering increased polariton absorption with increased exciton-exciton interactions explains these effects. Finally, nonlinear optical spectroscopy was used to study exciton transport, where near-ballistic behavior was revealed. The effect of exciton transport, thermalization and radiative recombination on the nonlinear optical response was explored.
We perform femtosecond spectrally resolved pump-probe differential reflectivity measurements on excitons in GaAs quantum wells in both coherent and incoherent regimes. The spectral signal is nonzero and oscillatory at $\ensuremath{-}\mathrm{ve}$ delay up to a few ps indicating persistent coherence between excitonic polarization induced by the probe pulse and the delayed pump pulse. The signal for small +ve and $\ensuremath{-}\mathrm{ve}$ delay $(\ensuremath{\tau})$ shows modulation caused by quantum beats due to coexcitation of heavy and light hole excitons. The rise of the signal with $\ensuremath{\tau}$ for $\ensuremath{\tau}<0$ is rather nonexponential and is sensitive to detuning of the detection energy with respect to the exciton energy. The signal decay with $\ensuremath{\tau}$ for small +ve $\ensuremath{\tau}$ shows dependence on pump-probe relative polarization. The excitonic reflectivity shows a large reduction caused by excitonic absorption saturation for both +ve and $\ensuremath{-}\mathrm{ve}$ $\ensuremath{\tau}$ when the pump pulse intensity is increased to large values. To compare the experimental results with theory, we obtain an expression for the PPDR signal in terms of the third order excitonic polarization. This has an additional term not considered earlier to describe pump-probe experiments. The calculations are performed using optical Bloch equations, modified to incorporate exciton inhomogeneous broadening, quantum beats, and many body effects such as local field, excitation induced energy shift, and dephasing. These effects are found essential in explaining the observed PPDR spectral data. The delay dependence of the signal near the exciton energy is mainly controlled by inhomogeneous broadening for $\ensuremath{-}\mathrm{ve}$ $\ensuremath{\tau}.$ The signal decay for large +ve $\ensuremath{\tau}$ has an exponential behavior determined by the lifetime of incoherent excitons. Experiments for collinear polarization reveal an additional exponential component for small +ve delay. Theoretically, this is found to be related to exciton dephasing and is present only when many body effects are included.