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Physics World

Superconducting gains

Published Jul 1, 2000• 0 citations
Publisher

Abstract

Transistors are invariably made of semiconducting materials, but the special properties of superconducting materials make them attractive for some, highly demanding, applications Indeed, physicists have been trying to build superconducting devices with transistor-like properties – in particular devices that can amplify electrical currents – for more than 20 years. Now Giampiero Pepe of the University of Naples in Italy and colleagues led by Antonio Barone, together with Norman Booth of Oxford University in the UK, have built a superconducting device that exhibits large current amplification and other transistor-like properties (G P Pepe et al. 2000 Appl. Phys. Lett. at press). The device can also he operated to obtain negative current gain, which is not possible with semiconductor devices.

DOI
10.1088/2058-7058/13/7/2

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Transistors are invariably made of semiconducting materials, but the special properties of superconducting materials make them attractive for some, highly demanding, applications Indeed, physicists have been trying to build superconducting devices with transistor-like properties – in particular devices that can amplify electrical currents – for more than 20 years. Now Giampiero Pepe of the University of Naples in Italy and colleagues led by Antonio Barone, together with Norman Booth of Oxford University in the UK, have built a superconducting device that exhibits large current amplification and other transistor-like properties (G P Pepe et al. 2000 Appl. Phys. Lett. at press). The device can also he operated to obtain negative current gain, which is not possible with semiconductor devices.
A superconducting transistor with large current gain and bandwidth at low temperatures would have many applications. We have fabricated and tested a new three-terminal superconducting device with transistor-like properties at an operating temperature of 4.2 K. It is based on a stacked double tunnel junction structure where the intermediate film is a bilayer of superconducting Nb and an Al quasiparticle trap which can work either in the superconducting or in the normal metal state. Current amplification factors of up to 2.0 are observed at a temperature of 4.2 K when the Al is superconducting, while large current gains of more than 50 are observed when the Al is in the normal state. The device shows a high degree of unidirectionality. The results can be explained on the basis of the recently proposed QUAsiparticle TRApping TRANsistor, which should have wide applications in detection systems operating at low temperatures.
We have fabricated and studied a stacked superconducting double tunnel junction device with transistor-like properties. The intermediate electrode is a bilayer consisting of a Nb film together with an Al film that acts as a quasiparticle trap. Large current gains of more than 50 are observed at 4.2 K when the Al layer is normal. The operation is highly directional. Results are explained on the basis of trapping of quasiparticles from a superconductor into a normal metal, together with a conversion of relaxation energy into electronic excitations. Similar devices should have wide applications in low-temperature measurement and detection systems.
Interest in superconducting transistors is due to some potential benefits of these devices, such as the possibility to have large current gain and bandwidth at low temperatures. In this work we present experimental results concerning with a new superconducting 3-terminal device showing true transistor-like properties at T=4.2K. It is a stacked double tunnel junction structure where the intermediate film is a bilayer of superconducting Nb with an Al quasiparticle trap which can be either in the superconducting or in the normal metal state. Current amplification factors of up to 2.0 are observed at a temperature of 4.2 K when the Al is superconducting. When the Al is in the normal state, large current gains of more than 50 are observed. The operation is highly directional, i.e. practically no effect is observed when the roles of the injector and detector junctions are reversed. The results are explained according to the recently proposed QUAsiparticle TRApping TRANnsistor model.
The development of three-terminal superconducting devices with transistor-like characteristics may be crucial for a number of applications of superconducting electronics. A three-terminal Josephson device which in principle could have gain, and which depends on the magnetoelectric effect is described. The magnetoelectric effect is a property of the antiferromagnetic phase of certain compounds. When an electric field is applied across a magnetoelectric material, a magnetization develops. If one Josephson junction of a two-junction, three-electrode sandwich contained a magnetoelectric barrier, a magnetic field would result if that junction were switched to the finite voltage state. This field, when coupled into the second junction, would cause it to switch from the zero-voltage to the finite voltage state. If the second junction had a larger critical current than the drive junction, then the three-terminal device would have gain.
We report on the measurement results of the superconducting-ferromagnetic transistors (SFTs). The devices were made at Northwestern University and Hypres (SeeQC), Inc. (Nevirkovets et al., 2014; 2015). SFT is a multiterminal device with the SIS'FIFS (or SFIFS'IS) structure (where S, I, and F denote a superconductor, an insulator, and a ferromagnetic material, respectively) exploiting intense quasiparticle injection in order to modify the nonlinear I-V curve of a superconducting tunnel junction. SFT is capable of providing voltage, current, and power amplification while having good input/output isolation. We characterized the devices using different measurement techniques. We measured S parameters of the single- and double-acceptor devices at frequencies up to 5 MHz. Importantly, we confirmed that the isolation between the input and output of the device is quite good. However, the techniques typically employed to characterize semiconductor devices do not allow for revealing the full potential of our low-resistive SFT devices, especially those having two acceptors. In the latter case, we also tested the devices using the battery-powered current sources with floating grounds. Analyzing double-acceptor I-V curves recorded at different levels of injection currents, for an optimal load, we deduced a small-signal voltage gain of 33 and a power gain of 2.4. We suggest that further improvement of the SFT device parameters is possible in optimized devices, so that the device potentially may serve as a preamplifier for readout of output signals of cryogenic detectors and be useful as an element of other superconductor-based circuits. In addition, we used scanning transmission electron microscopy to identify some problems in the fabrication of the devices without any planarization.