Integration of entangled photon sources in a quantum photonic chip has enabled the most envisioned quantum photonic technologies to be performed in a compact platform with enhanced complexity and stability as compared to bulk optics. However, the technology to generate entangled photon states in a quantum photonic chip that are neither probabilistic nor restricted to low efficiency is still missing. Here, we introduce a hybrid quantum photonic chip where waveguide-coupled self-assembled quantum dots (QDs) are heterogeneously integrated onto a piezoelectric actuator. By exerting an anisotropic stress, we experimentally show that the fine structure splitting of waveguide-coupled quantum dots can be effectively eliminated. This allows for the demonstration of chip-integrated self-assembled QDs for generating and routing polarization-entangled photon pairs. Our results presented here would open up an avenue for implementing on-demand quantum information processing in a quantum photonic chip by employing all-solid-state self-assembled quantum dot emitters.
Integration of entangled photon sources in a quantum photonic chip has enabled the most envisioned quantum photonic technologies to be performed in a compact platform with enhanced complexity and stability as compared to bulk optics. However, the technology to generate entangled photon states in a quantum photonic chip that are neither probabilistic nor restricted to low efficiency is still missing. Here, we introduce a hybrid quantum photonic chip where waveguide-coupled self-assembled quantum dots (QDs) are heterogeneously integrated onto a piezoelectric actuator. By exerting an anisotropic stress, we experimentally show that the fine structure splitting of waveguide-coupled quantum dots can be effectively eliminated. This allows for the demonstration of chip-integrated self-assembled QDs for generating and routing polarization-entangled photon pairs. Our results presented here would open up an avenue for implementing on-demand quantum information processing in a quantum photonic chip by employing all-solid-state self-assembled quantum dot emitters.
Many of the envisioned quantum photonic technologies, e.g. a quantum repeater, rely on an energy- (wavelength-) tunable source of polarization entangled photon pairs. The energy tunability is a fundamental requirement to perform two-photon-interference between different sources and to swap the entanglement. Parametric-down-conversion and four-wave-mixing sources of entangled photons have shown energy tunability, however the probabilistic nature of the sources limits their applications in complex quantum protocols. Here we report a silicon-based hybrid photonic chip where energy-tunable polarization entangled photons are generated by deterministic and scalable III-V quantum light sources. This device is based on a micro-electromechanical system (MEMS) incorporating InAs/GaAs quantum dots (QDs) on a PMNPT-on-silicon substrate. The entangled photon emissions from single QDs can be tuned by more than 3000 times of the radiative linewidth without spoiling the entanglement. With a footprint of several hundred microns, our design facilitates the miniaturization and scalable integration of indistinguishable entangled photon sources on silicon. When interfaced with silicon-based quantum photonic circuits, this device will offer a vast range of exciting possibilities.
On demand single-photon and entangled-photon sources are key building-blocks for many proposed photonic quantum technologies. For practical device applications, epitaxially grown quantum dots (QDs) are of increasing importance due to their bright photon emission with sharp line width. Particularly, they are solid-state systems and can be easily embedded within a light-emitting diode (LED) to achieve electrically driven sources. Therefore, one would expect a full-fledged optoelectronic quantum network that is running on macroscopically separated, QD-based single- and entangled-photon devices. An all-electrically operated wavelength-tunable on demand single-photon source (SPS) is demonstrated first. The device consists of a LED in the form of self-assembled InGaAs QDs containing nanomembrane integrated onto a piezoelectric crystal. Triggered single photons are generated via injection of ultra-short electrical pulses into the diode, while their energy can be precisely tuned over a broad range of about 4.8 meV by varying the voltage applied to the piezoelectric crystal. High speed operation of this single-photon emitting diode up to 0.8 GHz is demonstrated. In the second part of this thesis, a fast strain-tunable entangled-light-emitting diode (ELED) is demonstrated. It has been shown that the fine structure splitting of the exciton can be effectively overcome by employing a specific anisotropic strain field. By injecting ultra-fast electrical pulses to the diode, electrically triggered entangled-photon emission with high degree of entanglement is successfully realized. A statistical investigation reveals that more than 30% of the QDs in the strain-tunable quantum LED emit polarization-entangled photon-pairs with entanglement-fidelities up to f+ = 0.83(5). Driven at the highest operation speed ever reported so far (400 MHz), the strain-tunable quantum LED emerges as unique devices for high-data rate entangled-photon applications. In the end of this thesis, on demand and wavelength-tunable LH single-photon emission from strain engineered GaAs QDs is demonstrated. Fourier-transform spectroscopy is performed, from which the coherence time of the LH single-photon emission is studied. It is envisioned that this new type of LH exciton-based SPS can be applied to realize an all-semiconductor based quantum interface in the foreseeable distributed quantum networks.
The creation of a quantum photonic integrated circuit, bringing together quantum light sources; detectors; and elements for routing and modulating the photons; is a fundamental step towards a compact and self-contained quantum information processor. Here we report on the realisation of a new hybrid integration platform for InAs Quantum Dot-based quantum light sources and waveguide-based photonic circuits. In this scheme, GaAs devices containing embedded quantum dots are bonded to a silicon oxynitride waveguide circuit such that the quantum dot emission is coupled to the waveguide mode. The output from the waveguide element is coupled into optical fibre (also bonded to the waveguide chip) and the whole assembly is cooled to cryogenic temperatures. Integrated tuneable Mach-Zehnder interferometers permit on-chip photon routing to be achieved and allow the device to act as a path-encoded qubit preparation device. By utilising one such interferometer as a reconfigurable beam splitter, the single photon nature of the emission was confirmed by a Hanbury Brown and Twiss measurement on chip.
We report on the observation of nearly maximally entangled photon pairs from semiconductor quantum dots, without resorting to postselection techniques. We use GaAs quantum dots integrated on a patterned piezoelectric actuator capable of suppressing the exciton fine structure splitting. By using a resonant two-photon excitation, we coherently drive the biexciton state and demonstrate experimentally that our device generates polarization-entangled photons with a fidelity of 0.978(5) and a concurrence of 0.97(1) taking into account the nonidealities stemming from the experimental setup. By combining fine-structure-dependent fidelity measurements and a theoretical model, we identify an exciton spin-scattering process as a possible residual decoherence mechanism. We suggest that this imperfection may be overcome using a modest Purcell enhancement so as to achieve fidelities >0.99, thus making quantum dots evenly matched with the best probabilistic entangled photon sources.
Generating polarization entangled photon pairs from semiconductor quantum dots (QDs) is a desired feature for advanced quantum applications integrated with semiconductor technology, such as quantum cryptography and quantum teleportation, but has remained a technically challenging task for a long time, due to the inevitable and hardly controlled fine structure splitting (FSS) between the single-exciton doublets of QDs. Till recently, a conceptual and technological break- through was made by Trotta et al. to successfully remove the FSSs of QDs in an universal and deterministic manner, which points out the necessity of using at least two generic fields as tuning knobs for the FSS-elimination. Inspired by the progress, currently more attempt is to develop the quantum light emitting devices with versatile functionalities, such as electrical trigger of photon- pair emission or tunability of light-wavelength. In the sense, the use of two tuning knobs yet in turn impose a restriction to the versatility of devices that needs also additional tuning knobs for the functional operations. In this study, we carry out a theoretical and computation investigation of the excitonic FSSs of droplet-epitaxial (DE) GaAs/AlGaAs QDs controlled by piezoelectricity actuators. As a main of this work, we find that the number of the required tuning knobs for a deterministic generation of EPPs from asymmetric QDs actually can be reduced to be only one as long as the crystal symmetries of QD material and piezoelectricity actuator are compatible. As a feasible example, we show that the FSSs of asymmetric GaAs QDs can be certainly eliminated with a single bi-axial stress generated by (001) PMN-PT actuator that is, in the sense of symmetry, in coincidence with the zinc-blende crystal structure of QD.
Many of the quantum information applications rely on indistinguishable sources of polarization-entangled photons. Semiconductor quantum dots are among the leading candidates for a deterministic entangled photon source; however, due to their random growth nature, it is impossible to find different quantum dots emitting entangled photons with identical wavelengths. The wavelength tunability has therefore become a fundamental requirement for a number of envisioned applications, for example, nesting different dots via the entanglement swapping and interfacing dots with cavities/atoms. Here we report the generation of wavelength-tunable entangled photons from on-chip integrated InAs/GaAs quantum dots. With a novel anisotropic strain engineering technique based on PMN-PT/silicon micro-electromechanical system, we can recover the quantum dot electronic symmetry at different exciton emission wavelengths. Together with a footprint of several hundred microns, our device facilitates the scalable integration of indistinguishable entangled photon sources on-chip, and therefore removes a major stumbling block to the quantum-dot-based solid-state quantum information platforms.