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arXiv:1508.00042

Energy-tunable entangled photon sources on a III-V/Silicon chip

Yan Chen, Jiaxiang Zhang, Michael Zopf, Kyubong Jung, Zhang, Yang, Fei Ding, Oliver G. Schmidt

Published Jul 31, 2015• 0 citations
arXivHTMLPDF

Abstract

Many of the envisioned quantum photonic technologies, e.g. a quantum repeater, rely on an energy- (wavelength-) tunable source of polarization entangled photon pairs. The energy tunability is a fundamental requirement to perform two-photon-interference between different sources and to swap the entanglement. Parametric-down-conversion and four-wave-mixing sources of entangled photons have shown energy tunability, however the probabilistic nature of the sources limits their applications in complex quantum protocols. Here we report a silicon-based hybrid photonic chip where energy-tunable polarization entangled photons are generated by deterministic and scalable III-V quantum light sources. This device is based on a micro-electromechanical system (MEMS) incorporating InAs/GaAs quantum dots (QDs) on a PMNPT-on-silicon substrate. The entangled photon emissions from single QDs can be tuned by more than 3000 times of the radiative linewidth without spoiling the entanglement. With a footprint of several hundred microns, our design facilitates the miniaturization and scalable integration of indistinguishable entangled photon sources on silicon. When interfaced with silicon-based quantum photonic circuits, this device will offer a vast range of exciting possibilities.

DOI
10.48550/arxiv.1508.00042

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Many of the envisioned quantum photonic technologies, e.g. a quantum repeater, rely on an energy- (wavelength-) tunable source of polarization entangled photon pairs. The energy tunability is a fundamental requirement to perform two-photon-interference between different sources and to swap the entanglement. Parametric-down-conversion and four-wave-mixing sources of entangled photons have shown energy tunability, however the probabilistic nature of the sources limits their applications in complex quantum protocols. Here we report a silicon-based hybrid photonic chip where energy-tunable polarization entangled photons are generated by deterministic and scalable III-V quantum light sources. This device is based on a micro-electromechanical system (MEMS) incorporating InAs/GaAs quantum dots (QDs) on a PMNPT-on-silicon substrate. The entangled photon emissions from single QDs can be tuned by more than 3000 times of the radiative linewidth without spoiling the entanglement. With a footprint of several hundred microns, our design facilitates the miniaturization and scalable integration of indistinguishable entangled photon sources on silicon. When interfaced with silicon-based quantum photonic circuits, this device will offer a vast range of exciting possibilities.
Many of the quantum information applications rely on indistinguishable sources of polarization-entangled photons. Semiconductor quantum dots are among the leading candidates for a deterministic entangled photon source; however, due to their random growth nature, it is impossible to find different quantum dots emitting entangled photons with identical wavelengths. The wavelength tunability has therefore become a fundamental requirement for a number of envisioned applications, for example, nesting different dots via the entanglement swapping and interfacing dots with cavities/atoms. Here we report the generation of wavelength-tunable entangled photons from on-chip integrated InAs/GaAs quantum dots. With a novel anisotropic strain engineering technique based on PMN-PT/silicon micro-electromechanical system, we can recover the quantum dot electronic symmetry at different exciton emission wavelengths. Together with a footprint of several hundred microns, our device facilitates the scalable integration of indistinguishable entangled photon sources on-chip, and therefore removes a major stumbling block to the quantum-dot-based solid-state quantum information platforms.
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The demand for integrated photonic chips combining the generation and manipulation of quantum states of light is steadily increasing, driven by the need for compact and scalable platforms for quantum information technologies. While photonic circuits with diverse functionalities are being developed in different single material platforms, it has become crucial to realize hybrid photonic circuits that harness the advantages of multiple materials while mitigating their respective weaknesses, resulting in enhanced capabilities. Here, we demonstrate a hybrid III-V/silicon quantum photonic device combining the strong second-order nonlinearity and direct band gap of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an Al Ga As source and their vertical routing to an adhesively bonded silicon-on-insulator circuitry, within an evanescent coupling scheme managing both polarization states. This enables the on-chip generation of broadband ( > 40 nm) telecom photons by type-0 and type-2 SPDC from the hybrid device, at room temperature and with internal pair generation rates exceeding 10 5 s − 1 for both types, while the pump beam is strongly rejected. Two-photon interference with 92% visibility (and up to 99% upon 5-nm spectral filtering) proves the high energy-time entanglement quality of the produced quantum state, thereby enabling a wide range of quantum information applications on chip, within a hybrid architecture compliant with electrical pumping and merging the assets of two mature and highly complementary platforms in view of out-of-the-lab deployment of quantum technologies. Published by the American Physical Society 2024
Hybrid photonic devices, harnessing the advantages of multiple materials while mitigating their respective weaknesses, represent a promising solution to the effective on-chip integration of generation and manipulation of non-classical states of light encoding quantum information. We demonstrate a hybrid III-V/Silicon quantum photonic device combining the strong second-order nonlinearity and compliance with electrical pumping of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an Al-GaAs source and their subsequent routing to a silicon-on-insulator circuitry. This enables the on-chip generation of broadband telecom photon pairs by type 0 and type 2 SPDC from the hybrid device, at room temperature and with strong rejection of the pump beam. Two-photon interference with 92% visibility proves the high energy-time entanglement quality characterizing the produced quantum state, thereby enabling a wide range of quantum information applications.
Scalable quantum photonic technologies require deterministic sources of entangled photons that are compatible with established semiconductor manufacturing platforms. While self-assembled III-V semiconductor quantum dots are among the most promising sources of on-demand entanglement generation, their integration with silicon-based architectures remains a central challenge. Here, we demonstrate energy-time entanglement from a single InGaAs/GaAs quantum dot monolithically grown on a silicon substrate. Under resonant two-photon excitation, we achieve coherent control of the biexciton-exciton cascade, evidenced by the formation of dressed-states and Rabi oscillations. Using a four-channel Franson interferometer, we observe phase-dependent two-photon interference with visibilities up to (64.0 ± 7.0)% for a 80 ps integration window (and (49.4 ± 1.9)% for a 1600 ps window), approaching the threshold for Bell inequality violation at short timescales. Despite these constraints, the observation of Franson interference establishes monolithic III-V-on-silicon quantum dots as viable sources of energy-time entangled photons. These results represent a crucial step toward fully integrated, silicon-substrate-compatible quantum photonic circuits for large-scale quantum communication and information processing.
The prospect of using the quantum nature of light for secure communication keeps spurring the search and investigation of suitable sources of entangled-photons. Semiconductor quantum dots are arguably the most attractive. They can generate indistinguishable entangled-photons deterministically, and are compatible with current photonic-integration technologies, a set of properties not shared by any other entanglement resource. However, as no two quantum dots are identical, they emit entangled-photons with random energies. This hinders their exploitation in communication protocols requiring entangled-states with well-defined energies. Here, we introduce scalable quantum-dot-based sources of polarization-entangled-photons whose energy can be controlled via dynamic strain-engineering without degrading the degree of entanglement of the source. As a test-bench, we interface quantum dots with clouds of atomic vapours, and we demonstrate slow-entangled-photons from a single quantum emitter. These results pave the way towards the implementation of hybrid quantum networks where entanglement is distributed among distant parties using scalable optoelectronic devices.