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Journal of the Optical Society of America A

All-optical data switching in an optical fiber link using a GaAs bistable optical device (A)

Thirumalai Venkatesan, Paul J. Lemaire, Barry J. Wilkens, Leopoldo Soto, Arthur C. Gossard, Jack L. Jewell, Hyatt M. Gibbs, S. S. Tarng

Published Jan 1, 1983• 1 citation
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Bistable Optical Devices

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We demonstrate the potential for all-optical processing of data transmitted over single-mode fibers using a bistable optical device (BOD). A stream of clock/bias pulses transmitted over a 1-km-long single-mode fiber (SMF) is processed by a pseudorandom data sequence of picosecond pulses transmitted over another 1-km SMF with the help of an optical bistable device. The processed signal from the BOD is transmitted over another kilometer of SMF and detected. The bistable device is an ~3-microm-thick molecular-beam epitaxially grown multiple-quantum-well structure of GaAs and GaAlAs. The clock pulses (at wavelength lambda = 870.0 nm) are just below the threshold for switching on the device, and the switching is accomplished by a pseudorandom data sequence of picosecond pulses (at lambda = 835.0 nm). The pulse width of the data transposed onto the clock stream by the BOD can be controlled by varying the phase of the switching data with respect to the clock, which may be of importance in interle aving data for time-division multiplexing. The experiment also demonstrates the potential of a BOD's capability of switching information from one wavelength to another. With optimized devices regeneration should be possible with reasonable gain.
In this paper we present the basic principles of optical bistability and summarize the current advances in semiconductor optical switching, with emphasis on recent results in GaAs, CuCI, InAs, InSb, CdS, ZnS, and ZnSe etalons. These devices have great potential for applications involving optical signal processing and computing. As an example, we discuss the use of arrays of bistable devices for parallel optical processing and for addressable spatial light modulators. The use of nonlinear etalons as optical gates is also illustrated. To date, GaAs devices have shown the most favorable characteristics for practical applications. They operate at room temperature with a few milliwatts of power using a laser diode as the only light source. Quasi-cw operation and optical fiber signal regeneration have also been demonstrated. A GaAs NOR gate operates in 1 ps with <3 pJ incident energy; this, of course, implies a 1 ps switch-on time for a bistable etalon.
We report on low-power optical bistability in a vertical cavity structure at 1.55-μm wavelength due to the bandgap resonant dispersive optical nonlinearity of InGaAsP. In this structure, a GaAs-AlAs Bragg reflector grown on GaAs and the nonlinear medium grown on InP are bonded through wafer-fusion, leading to a high-quality vertical cavity after deposition of a top dielectric mirror. This device shows interesting characteristics for optical switching applications at fiber communication wavelengths, such as a switching contrast higher than 8:1 in the reflective mode and a bistability threshold power as low as 0.6 mW. True steady-state memory effect is observed with continuous-wave input, and the device switching time is in the ns range.