Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Physical Review Applied

Coupling of Erbium-Implanted Silicon to a Superconducting Resonator

Mark Hughes, Naitik A. Panjwani, Matias Urdampilleta, Nafsika Theodoropoulou, Ilana Wisby, Kevin Peter Homewood, Benedict N Murdin, T. Lindström, J. David Carey

Published Sep 2, 2021• 5 citations
Publisher

Abstract

Erbium-implanted silicon is promising for both photonic and quantum-technology platforms, since it possesses both telecommunications and integrated-circuit processing compatibility. However, several different $\mathrm{Er}$ centers are generated during the implantation and annealing process, the presence of which could hinder the development of these applications. When $\mathrm{Si}$ is coimplanted with ${10}^{17}\phantom{\rule{0.1em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$ $\mathrm{Er}$ and ${10}^{20}\phantom{\rule{0.1em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$ $\mathrm{O}$ ions, and the appropriate annealing process is used, one of these centers, which is present at higher $\mathrm{Er}$ concentrations, can be eliminated. Characterization of samples with $\mathrm{Er}$ concentrations of ${10}^{17}\phantom{\rule{0.1em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$ is limited by the sensitivity of standard electron paramagnetic resonance (EPR) instruments. The collective coupling strength between a superconducting (SC) $\mathrm{Nb}\mathrm{N}$ lumped-element resonator and a ${10}^{17}\phantom{\rule{0.1em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$ $\mathrm{Er}$-implanted $\mathrm{Si}$ sample at 20 mK is measured to be about 1 MHz, which provides a basis for the characterization of low-concentration $\mathrm{Er}$-implanted $\mathrm{Si}$ and for future networks of hybrid quantum systems that exchange quantum information over the telecommunication network. Of six known $\mathrm{Er}$-related EPR centers, only one trigonal center couples to the SC resonator.

DOI
10.1103/physrevapplied.16.034006

Related papers

Erbium implanted silicon for solid-state quantum technologies

Mark Hughes, Naitik A. Panjwani, Matias Urdampilleta +6 more

Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit (IC) processing compatibility. The electron spin coherence time of Er implanted Si with an Er concentration of 3X1017 cm-3 is measured to be ~10 μs at 5 K and the spin echo decay profile displays strong modulation due to super-hyperfine interaction with 29Si nuclei. Three independent measurements: temperature quenching of photoluminescence (PL), PL lifetime and photo-illuminated electron spin resonance (ESR) all indicate the presence of a previously unreported Er related defect state which can facilitate non-radiative relaxation from the Er exited state. This gives an energy level scheme analogous to that of the diamond NV centre, and implies that optical spin polarisation of the Zeeman ground state and high temperature operation of Er qubits in Er implanted Si may be feasible. The collective coupling strength between a superconducting NbN lumped-element microresonator and Er implanted Si with an Er concentration of 1017 cm-3 at 20 mK was ~ 1 MHz.

arXiv:2006.00225•May 30, 2020•0 citations

Hybrid quantum circuit with implanted erbium ions

S. Probst, Nadezhda Kukharchyk, Hannes Rotzinger +6 more

We report on hybrid circuit quantum electrodynamics experiments with focused ion beam implanted Er3+ ions in Y2SiO5 coupled to an array of superconducting lumped element microwave resonators. The Y2SiO5 crystal is divided into several areas with distinct erbium doping concentrations, each coupled to a separate resonator. The coupling strength is varied from 5 MHz to 18.7 MHz, while the linewidth ranges between 50 MHz and 130 MHz. We confirm the paramagnetic properties of the implanted spin ensemble by evaluating the temperature dependence of the coupling. The efficiency of the implantation process is analyzed and the results are compared to a bulk doped Er:Y2SiO5 sample. We demonstrate the integration of these engineered erbium spin ensembles with superconducting circuits.

arXiv:1409.7667•Applied Physics Letters•Oct 20, 2014•24 citations

Toward Scalable All-Silicon Superconducting-Photonic Integration on SOI

Waveren A. Van, Damiano Ricciarelli, Calogero G. +5 more

The reproducibility and scalability associated to the CMOS industry have led to a large increase in the use of siliconfor other applications as well, most notably the surge of silicon integrated photonics during the past decade.However, it is less well-known that this material cannot only host electronic and photonic circuits, but alsobecomes superconducting when hyper doped with Boron above 1 at.%.[1] We are currently working on buildingall-Si devices that combine superconductivity with integrated photonics to directly link quantum circuits to fast,low noise optical waveguides.Achieving the concentration required for superconductivity in silicon-on-insulator (SOI) used for photonic circuitsposes multiple challenges, as they can only be obtained via an out-of-equilibrium processes. Nanosecond laserdoping, that induces an ultra-fast liquid-phase epitaxy enables boron incorporation far above the solubility limit(up to 8 at.% in bulk silicon.[2]) The reduced heat dissipation through the 1-3 μm thick buried oxide (BOX)compared to bulk silicon leads to a large reduction of the recrystallization velocity from 4 m/s to 2 m/s and thus toa lower charge carrier concentration. Additionally, the higher thermal budget enhances dopant diffusion, leadingto unwanted deactivation of the boron.By combining experiments and simulations, we investigated the influence of the silicon and BOX thicknesses(notably Si/SiO2 = 220/2000, 700/3000 and 88/145 nm) on recrystallization dynamics and electrical properties. Itwas shown that the silicon thickness is the dominant factor for the melting threshold, whereas the BOX thicknessstrongly impacts the thermal budget, leading to dopant deactivation. As a result, both the total stack and thechosen laser energy determine the final recrystallization velocity. For the 700/3000 nm SOI reducing the layerthickness from 250 to 80 nm lowers the thermal budget and hence improves the layer quality, leading to a doublingof the charge carrier concentration. This enables superconductivity with a critical temperature of 0.5 K and, to ourbest knowledge, constitutes the first demonstration of superconductivity on photonics-compatible SOI.For SOI with thinner BOX layers, typical substrates for microelectronics applications such as FD-SOI MOSFET, thethermal confinement is smaller, and high dopant activation is systematically achieved. Furthermore, it has beenshown that implantation followed by nanosecond laser annealing can reach similar active concentrations as in-situdoping [3], allowing the implementation of superconducting devices on 'microelectronics' SOI with CMOScompatible techniques. These results indicate a promising potential for the industrial fabrication of hybrid circuitscombining integrated photonics and superconductive silicon.

•Jun 1, 2026•0 citations

Coupling of an erbium spin ensemble to a superconducting resonator

Matthias U Staudt, Io-Chun Hoi, Philip Krantz +9 more

A quantum coherent interface between optical and microwave photons can be used as a basic building block within a future quantum information network. The interface is envisioned as an ensemble of rare-earth ions coupled to a superconducting resonator, allowing for coherent transfer between optical and microwave photons. Towards this end, we have realized a hybrid device coupling a Er$^{3+}$ doped Y$_2$SiO$_5$ crystal in a superconducting coplanar waveguide cavity. We observe a collective spin coupling of 4 MHz and a spin linewdith of down to 75 MHz.

arXiv:1201.1718•Journal of Physics B Atomic Molecular and Optical Physics•Jun 8, 2012•33 citations

Optically modulated magnetic resonance of erbium implanted silicon

Mark Hughes, Heqing Li, Nafsika Theodoropoulou +1 more

Abstract Er implanted Si is a candidate for quantum and photonic applications; however, several different Er centres are generated, and their symmetry, energy level structure, magnetic and optical properties, and mutual interactions have been poorly understood, which has been a major barrier to the development of these applications. Optically modulated magnetic resonance (OMMR) gives a spectrum of the modulation of an electron paramagnetic resonance (EPR) signal by a tuneable optical field. Our OMMR spectrum of Er implanted Si agrees with three independent measurements, showing that we have made the first measurement of the crystal field splitting of the 4I13/2 manifold of Er implanted Si, and allows us to revise the crystal field splitting of the 4I15/2 manifold. This splitting originates from a photoluminescence (PL) active O coordinated Er centre with orthorhombic C2v symmetry, which neighbours an EPR active O coordinated Er centre with monoclinic C1h symmetry. This pair of centres could form the basis of a controlled NOT (CNOT) gate.

Scientific Reports•Dec 13, 2019•12 citations

On-Chip NbN Superconducting Resonators for Hybrid Magnon-Photon Coupled Systems

Muntasir Mahdi, Sherman E. Peek, Archit Shah +8 more

Inthe application of quantum information transduction with superconducting (SC) qubits, SC resonators play a phenomenal role in magnon-photon coupled systems. We present NbN (T$_{c}$= 10.8 K) superconducting microstrip resonators tailored for hybrid magnon-photon coupled systems. Our resonators exhibit remarkable coupling capability, enabling rigorous probing of magnon-photon interactions. With a fundamental frequency of 1.4 GHz and a second harmonic of 2.8 GHz, these resonators offer extensive frequency coverage, facilitating the identification and characterization of a wide spectral range. It exhibits a strong magnon-microwave photon coupling with a sphere of yttrium iron garnet (YIG). The average gyromagnetic ratio ($\gamma /2\pi$) and coupling strength ($g/2\pi$) achieved are 2.7 MHz/Oe and 11.14 MHz, respectively. The NbN SC resonators developed in this work address challenges associated with probing magnon-photon coupling in strong magnetic fields and are expected to serve as a unique platform for studying magnon-photon coupled hybrid devices.

IEEE Transactions on Applied Superconductivity•Jan 21, 2025•1 citation
Erbium-implanted silicon is promising for both photonic and quantum-technology platforms, since it possesses both telecommunications and integrated-circuit processing compatibility. However, several different Er\mathrm{Er}Er centers are generated during the implantation and annealing process, the presence of which could hinder the development of these applications. When Si\mathrm{Si}Si is coimplanted with 1017cm\ensuremath−3{10}^{17}\phantom{\rule{0.1em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}1017cm\ensuremath−3 Er\mathrm{Er}Er and 1020cm\ensuremath−3{10}^{20}\phantom{\rule{0.1em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}1020cm\ensuremath−3 O\mathrm{O}O ions, and the appropriate annealing process is used, one of these centers, which is present at higher Er\mathrm{Er}Er concentrations, can be eliminated. Characterization of samples with Er\mathrm{Er}Er concentrations of 1017cm\ensuremath−3{10}^{17}\phantom{\rule{0.1em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}1017cm\ensuremath−3 is limited by the sensitivity of standard electron paramagnetic resonance (EPR) instruments. The collective coupling strength between a superconducting (SC) NbN\mathrm{Nb}\mathrm{N}NbN lumped-element resonator and a 1017cm\ensuremath−3{10}^{17}\phantom{\rule{0.1em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}1017cm\ensuremath−3 Er\mathrm{Er}Er-implanted Si\mathrm{Si}Si sample at 20 mK is measured to be about 1 MHz, which provides a basis for the characterization of low-concentration Er\mathrm{Er}Er-implanted Si\mathrm{Si}Si and for future networks of hybrid quantum systems that exchange quantum information over the telecommunication network. Of six known Er\mathrm{Er}Er-related EPR centers, only one trigonal center couples to the SC resonator.
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit (IC) processing compatibility. The electron spin coherence time of Er implanted Si with an Er concentration of 3X1017 cm-3 is measured to be ~10 μs at 5 K and the spin echo decay profile displays strong modulation due to super-hyperfine interaction with 29Si nuclei. Three independent measurements: temperature quenching of photoluminescence (PL), PL lifetime and photo-illuminated electron spin resonance (ESR) all indicate the presence of a previously unreported Er related defect state which can facilitate non-radiative relaxation from the Er exited state. This gives an energy level scheme analogous to that of the diamond NV centre, and implies that optical spin polarisation of the Zeeman ground state and high temperature operation of Er qubits in Er implanted Si may be feasible. The collective coupling strength between a superconducting NbN lumped-element microresonator and Er implanted Si with an Er concentration of 1017 cm-3 at 20 mK was ~ 1 MHz.
We report on hybrid circuit quantum electrodynamics experiments with focused ion beam implanted Er3+ ions in Y2SiO5 coupled to an array of superconducting lumped element microwave resonators. The Y2SiO5 crystal is divided into several areas with distinct erbium doping concentrations, each coupled to a separate resonator. The coupling strength is varied from 5 MHz to 18.7 MHz, while the linewidth ranges between 50 MHz and 130 MHz. We confirm the paramagnetic properties of the implanted spin ensemble by evaluating the temperature dependence of the coupling. The efficiency of the implantation process is analyzed and the results are compared to a bulk doped Er:Y2SiO5 sample. We demonstrate the integration of these engineered erbium spin ensembles with superconducting circuits.
The reproducibility and scalability associated to the CMOS industry have led to a large increase in the use of siliconfor other applications as well, most notably the surge of silicon integrated photonics during the past decade.However, it is less well-known that this material cannot only host electronic and photonic circuits, but alsobecomes superconducting when hyper doped with Boron above 1 at.%.[1] We are currently working on buildingall-Si devices that combine superconductivity with integrated photonics to directly link quantum circuits to fast,low noise optical waveguides.Achieving the concentration required for superconductivity in silicon-on-insulator (SOI) used for photonic circuitsposes multiple challenges, as they can only be obtained via an out-of-equilibrium processes. Nanosecond laserdoping, that induces an ultra-fast liquid-phase epitaxy enables boron incorporation far above the solubility limit(up to 8 at.% in bulk silicon.[2]) The reduced heat dissipation through the 1-3 μm thick buried oxide (BOX)compared to bulk silicon leads to a large reduction of the recrystallization velocity from 4 m/s to 2 m/s and thus toa lower charge carrier concentration. Additionally, the higher thermal budget enhances dopant diffusion, leadingto unwanted deactivation of the boron.By combining experiments and simulations, we investigated the influence of the silicon and BOX thicknesses(notably Si/SiO2 = 220/2000, 700/3000 and 88/145 nm) on recrystallization dynamics and electrical properties. Itwas shown that the silicon thickness is the dominant factor for the melting threshold, whereas the BOX thicknessstrongly impacts the thermal budget, leading to dopant deactivation. As a result, both the total stack and thechosen laser energy determine the final recrystallization velocity. For the 700/3000 nm SOI reducing the layerthickness from 250 to 80 nm lowers the thermal budget and hence improves the layer quality, leading to a doublingof the charge carrier concentration. This enables superconductivity with a critical temperature of 0.5 K and, to ourbest knowledge, constitutes the first demonstration of superconductivity on photonics-compatible SOI.For SOI with thinner BOX layers, typical substrates for microelectronics applications such as FD-SOI MOSFET, thethermal confinement is smaller, and high dopant activation is systematically achieved. Furthermore, it has beenshown that implantation followed by nanosecond laser annealing can reach similar active concentrations as in-situdoping [3], allowing the implementation of superconducting devices on 'microelectronics' SOI with CMOScompatible techniques. These results indicate a promising potential for the industrial fabrication of hybrid circuitscombining integrated photonics and superconductive silicon.
A quantum coherent interface between optical and microwave photons can be used as a basic building block within a future quantum information network. The interface is envisioned as an ensemble of rare-earth ions coupled to a superconducting resonator, allowing for coherent transfer between optical and microwave photons. Towards this end, we have realized a hybrid device coupling a Er3+^{3+}3+ doped Y2_22​SiO5_55​ crystal in a superconducting coplanar waveguide cavity. We observe a collective spin coupling of 4 MHz and a spin linewdith of down to 75 MHz.
Abstract Er implanted Si is a candidate for quantum and photonic applications; however, several different Er centres are generated, and their symmetry, energy level structure, magnetic and optical properties, and mutual interactions have been poorly understood, which has been a major barrier to the development of these applications. Optically modulated magnetic resonance (OMMR) gives a spectrum of the modulation of an electron paramagnetic resonance (EPR) signal by a tuneable optical field. Our OMMR spectrum of Er implanted Si agrees with three independent measurements, showing that we have made the first measurement of the crystal field splitting of the 4I13/2 manifold of Er implanted Si, and allows us to revise the crystal field splitting of the 4I15/2 manifold. This splitting originates from a photoluminescence (PL) active O coordinated Er centre with orthorhombic C2v symmetry, which neighbours an EPR active O coordinated Er centre with monoclinic C1h symmetry. This pair of centres could form the basis of a controlled NOT (CNOT) gate.
Inthe application of quantum information transduction with superconducting (SC) qubits, SC resonators play a phenomenal role in magnon-photon coupled systems. We present NbN (Tc_{c}c​= 10.8 K) superconducting microstrip resonators tailored for hybrid magnon-photon coupled systems. Our resonators exhibit remarkable coupling capability, enabling rigorous probing of magnon-photon interactions. With a fundamental frequency of 1.4 GHz and a second harmonic of 2.8 GHz, these resonators offer extensive frequency coverage, facilitating the identification and characterization of a wide spectral range. It exhibits a strong magnon-microwave photon coupling with a sphere of yttrium iron garnet (YIG). The average gyromagnetic ratio (γ/2π\gamma /2\piγ/2π) and coupling strength (g/2πg/2\pig/2π) achieved are 2.7 MHz/Oe and 11.14 MHz, respectively. The NbN SC resonators developed in this work address challenges associated with probing magnon-photon coupling in strong magnetic fields and are expected to serve as a unique platform for studying magnon-photon coupled hybrid devices.