Erbium-implanted silicon is promising for both photonic and quantum-technology platforms, since it possesses both telecommunications and integrated-circuit processing compatibility. However, several different
Er centers are generated during the implantation and annealing process, the presence of which could hinder the development of these applications. When
Si is coimplanted with ${10}^{17}\phantom{\rule{0.1em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$
Er and ${10}^{20}\phantom{\rule{0.1em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$
O ions, and the appropriate annealing process is used, one of these centers, which is present at higher
Er concentrations, can be eliminated. Characterization of samples with
Er concentrations of ${10}^{17}\phantom{\rule{0.1em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$ is limited by the sensitivity of standard electron paramagnetic resonance (EPR) instruments. The collective coupling strength between a superconducting (SC)
NbN lumped-element resonator and a ${10}^{17}\phantom{\rule{0.1em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$
Er-implanted
Si sample at 20 mK is measured to be about 1 MHz, which provides a basis for the characterization of low-concentration
Er-implanted
Si and for future networks of hybrid quantum systems that exchange quantum information over the telecommunication network. Of six known
Er-related EPR centers, only one trigonal center couples to the SC resonator.
Erbium implanted silicon (Er:Si) is a promising platform for quantum networking applications, but a major obstacle is the formation of multiple Er centres. We show that the previously identified cubic centre (Er-C) has C2v or lower symmetry. Using crystal field analysis of Er-C and other Er centres, and by comparison with extended X-ray absorption fine structure (EXAFS) measurements, we show that Er centres can be arranged in a sequence, ranging from entirely Si coordinated, through mixed Si and oxygen (O) coordination, to entirely O coordinated. G-factors calculated from our crystal field fitting closely match those determined by Zeeman splitting and electron paramagnetic resonance (EPR) measurements. We co-implanted Si with Er and O (each to a concentration of 1019 cm-3). By increasing the quenching rate of the subsequent thermal anneal from ~100 °C/s to ~1000 °C/s, we change the dominant optically active centre, formed from Er2O3 clusters to the less energetically favourable Er-C centre with mixed Si and O coordination. Temperature dependent photoluminescence (PL) shows that Er2O3 clusters and Er-C centres have an O-related defect state at ~200 and 90 meV above the 4I13/2 Er manifold, respectively. PL lifetime measurements show that the Er2O3 clusters and Er-C centres fall into two or three classes, characterised by different non-radiative PL decay rates. Our high quench rate annealing process could facilitate the formation of a single, optically active Er centre, which is preferable for quantum networking applications of Er:Si.
Rare-earth ions in solid-state hosts exhibit low homogeneous broadening and long spin coherence at cryogenic temperatures thus making them a promising candidate for optical quantum memories [1], optical-microwave transducers [2] and single dopant-based devices such as single photon emitters operating at the telecommunication wavelengths [3]. Here, we present an overview of the spin and optical properties of Er ensembles in Si accessed via resonant photoluminescence excitation (PLE) spectroscopy [4]. Samples were positioned directly on top of tailor-fabricated superconducting single photon detectors, placed in a dilution refrigerator unit and resonantly excited using fiber optics. Our method provided high collection efficiency and allowed spectral measurements of low Er density samples. The observed Er PLE spectra were strongly affected by the presence of co-dopants such as O, B or P reflecting their influence on the formation of optically active Er sites and corresponding Er optical transition energies. Higher O densities resulted in especially rich PLE spectra suggesting that a variety of Er-O complexes formed due to O doping. Lowering the O concentration, we achieved PLE spectra dominated by a single Er site in P doped samples. Interestingly, the Er spin relaxation and optical coherence properties were barely affected by the employed co-dopants and mainly depended on the Er concentration. By lowering the Er concentration from relatively high (1018cm-3) to low densities (1016cm-3), we were able to increase Er spin lifetimes from ~0.1 s to ~30 s. Long spin relaxation times allowed us to identify PLE spectra of new Er sites in Si. In both concentration regimes, we observed sub-MHz transient spectral holes suggesting long optical coherence times. Furthermore, we observed sub-MHz spin transitions in both natural and isotopically purified Si and achieved spin coherence times above 1 ms in isotopically purified Si. Narrow optical linewidths and long transverse and longitudinal spin relaxation times show that Er in Si is an excellent candidate for future quantum information and communication applications.
Erbium-implanted silicon (Er) holds promise for quantum networking, but the formation of multiple Er centres poses a challenge. We show that the cubic centre (Er-C) has C2v or lower symmetry, with Er centres ranging from fully Si- to fully O-coordinated. By co-implanting Si with Er and O (each at 1019 cm-3) and increasing the thermal anneal quenching rate from ~100 °C/s to ~1000 °C/s, we shifted the dominant optically active centre from Er2O3 clusters to the less stable Er-C centre with mixed Si and O coordination. Temperature-dependent photoluminescence reveals Er2O3 clusters and Er-C centres have O-related defect states at ~200 and 90 meV above the 4I13/2 Er manifold, respectively.
We report on hybrid circuit quantum electrodynamics experiments with focused ion beam implanted Er3+ ions in Y2SiO5 coupled to an array of superconducting lumped element microwave resonators. The Y2SiO5 crystal is divided into several areas with distinct erbium doping concentrations, each coupled to a separate resonator. The coupling strength is varied from 5 MHz to 18.7 MHz, while the linewidth ranges between 50 MHz and 130 MHz. We confirm the paramagnetic properties of the implanted spin ensemble by evaluating the temperature dependence of the coupling. The efficiency of the implantation process is analyzed and the results are compared to a bulk doped Er:Y2SiO5 sample. We demonstrate the integration of these engineered erbium spin ensembles with superconducting circuits.
This thesis investigates the potential of Er:YSO and Er:Si for quantum communication and computation applications. Erbium uniquely possess optical transitions in the 1.5 um region, making it suitable for both fibre telecommunication and silicon photonics. The properties of the
I15/2↔I13/2 optical transition in Er:YSO have already been extensively studied. Over two decades ago, improvements in
Er3+ dephasing time at 1.5 um were achieved by applying a 5T field along the D1 axis. More recently, a record 4.4 ms coherence time on the same optical transition was achieved using a 7T field. These investigations, among others, illustrate that large Er electron spins become thermally polarised with sufficient magnetic field. However, no long lived and coherent spin transitions associated with the Er ions had previously been identified, and such transitions are necessary for on-demand quantum state storage. To address this requirement, the optical and hyperfine transition properties of 167-Er:YSO were investigated in large magnetic fields. In a field of 7T, spectral hole lifetimes of 1 minute and hyperfine population lifetimes of 12 minutes were observed. These measurements illustrate the effect of spin-lattice relaxation in this system, and how it can be mitigated. Efficient spin-polarisation of the entire 167-Er hyperfine ensemble is also demonstrated. This is the first such demonstration in rare earth systems, and a key requirement for broadband optical storage. Moreover, a 1.3 second coherence time was recorded for an 167-Er:YSO hyperfine transition at 7T and 1.4 K. This is an improvement of several orders-of-magnitude over previous coherence measurements on spin-transitions in Er doped solids. This is also sufficient for maximal entanglement rates in quantum repeater networks that span distances of 1000 km or greater. With an optical transition at 1.5 um, Er is also an ideal candidate to connect silicon based quantum computers to the future quantum Internet. In particular, single Er:Si ions could be used to develop an optical-spin bus between P:Si qubits and fibre based quantum networks. Presented here is the first spectroscopic investigation of single Er:Si ions. This required a novel opto-electronic approach to single ion detection, where the Er ions are implanted into a nanometre scale fin-shaped Field Effect Transistor. With this approach it was possible to develop high resolution optical spectra, where both the electronic and hyperfine levels of individual Er ions were resolved. Long optical and spin coherence times are also important requirements for an optical-spin bus. To address the first requirement, an investigation of the optical lineshape was undertaken. Here it was determined that sources of Stark noise external to the transistor channel contribute a significant amount to optical homogeneous linewidth. However, the dominant noise contribution was determined to be short-range (from within the 30 nm wide channel) and the total homogeneous linewidth was measured to be 50 MHz. The site structure of an individual Er:Si ion was then analysed, using magnetic field rotation patterns and optical transitions between multiple crystal field levels. This site was determined to have approximately axial (
C3) symmetry. The purpose of this study was to determine a magnetic field regime in which the Er electrons spin can be polarised, which is necessary for realising of long hyperfine lifetimes and coherence times.