CMOS-compatible photonic chips are highly desirable for real-world quantum optics devices due to their scalability, robustness, and integration with electronics. Despite impressive advances using Silicon nanostructures, challenges remain in reducing their linear and nonlinear losses and in creating narrowband photons necessary for interfacing with quantum memories. Here we demonstrate the potential of the silicon nitride (Si3N4) platform by realizing an ultracompact, bright, entangled photon-pair source with selectable photon bandwidths down to 30 MHz, which is unprecedented for an integrated source. Leveraging Si3N4's moderate thermal expansion, simple temperature control of the chip enables precise wavelength stabilization and tunability without active control. Single-mode photon pairs at 1550 nm are generated at rates exceeding 107 s-1 with mW's of pump power and are used to produce time-bin entanglement. Moreover, Si3N4 allows for operation from the visible to the mid-IR, which make it highly promising for a wide range of integrated quantum photonics applications.
Entangled photon-pair sources are essential components for emerging quantum information-processing technologies. Among various platforms, on-chip microresonators offer strong potential due to their resonant enhancement and suitability for wafer-scale integration. In this study, we demonstrate ultrabright entangled photon-pair generation from high- Q silicon microring resonators. By optimizing the device geometry and coupling configuration to suppress sidewall scattering and selectively excite the fundamental mode, we achieve single-mode resonance with an intrinsic Q -factor of 1.26 × 10 6 using only standard fabrication processes available in CMOS foundries. The resulting high- Q resonator yields a record-high brightness coefficient of 3.9 × 10 9 Hz/GHz/mW 2 . At an on-chip pump power of 240 μW, we obtain a maximum brightness of 22.0 MHz/GHz and a maximum photon-pair generation rate of 9.19 MHz. At a low-pump power of 10 μW, Franson-type two-photon interference exhibits a visibility of 98.0 ± 0.2%, confirming high-quality time–energy entanglement. These results show that narrow bandwidth and high generation rate can be achieved simultaneously in CMOS-compatible silicon photonic sources, thereby advancing their use in quantum repeaters and scalable quantum networks.
Photon-pair sources are critical building blocks for photonic quantum systems. Leveraging Kerr nonlinearity and cavity-enhanced spontaneous four-wave mixing, chip-scale photon-pair sources can be created using microresonators built on photonic integrated circuit. For practical applications, a high microresonator quality factor Q is mandatory to magnify photon-pair sources' brightness and reduce their linewidth. The former is proportional to Q^{4}, while the latter is inversely proportional to Q. Here, we demonstrate an integrated, microresonator-based, narrowband photon-pair source. The integrated microresonator, made of silicon nitride and fabricated using a standard CMOS foundry process, features ultralow loss down to 0.03 dB/cm and intrinsic Q factor exceeding 10^{7}. The photon-pair source has brightness of 1.17×10^{9} Hz/mW^{2}/GHz and linewidth of 25.9 MHz, both of which are record values for silicon-photonics-based quantum light source. It further enables a heralded single-photon source with heralded second-order correlation g_{h}^{(2)}(0)=0.0037(5), as well as an energy-time entanglement source with a raw visibility of 0.973(9). Our work evidences the global potential of ultralow-loss integrated photonics to create novel quantum light sources and circuits, catalyzing efficient, compact, and robust interfaces to quantum communication and networks.
Heterogeneous integration of gain and strongly nonlinear materials with ultra-low-loss silicon nitride (SiN) photonics offers a route to scalable quantum circuits, but concurrent wafer-scale manufacturability, low interlayer loss, and high performance have been challenging to realize. Here we demonstrate a wafer-scale III-V-on-SiN quantum photonic platform that directly integrates III-V layers to foundry-fabricated SiN circuits. The SiN layer provides 200-300 nm thick waveguides with
<1 dB/m loss and a mature passive photonics ecosystem, while III-V materials provide large
χ(2) and
χ(3) nonlinearities for parametric gain, frequency conversion and quantum light generation. Adiabatic interlayer couplers yield
<25 mdB loss to InGaP waveguides and resonators with intrinsic quality factors exceeding
106, enabling
15× brighter entanglement sources and efficient nonlinear conversion on SiN. Integrated components--including low-loss beam splitters, waveguide crossers, and tunable interferometers--are complemented by III-V lasers and InP photodetectors with amplifiers achieving up to
99−12+1% quantum efficiency and
3 GHz bandwidth. This architecture unites ultra-efficient sources, nonlinear elements and detectors on a wafer-scale, low-loss platform, establishing a path toward large-scale, low-noise quantum photonic systems.
Multi-wavelength quantum light sources, especially at telecom band, are extremely desired in quantum information technology. Despite recent impressive advances, such a quantum light source with high quality remains challenging. Here we demonstrate a multi-wavelength quantum light source using a silicon nitride micro-ring with a free spectral range of 200 GHz. The generation of eight pairs of correlated photons is ensured in a wavelength range of 25.6 nm. With device optimization and noise-rejecting filters, our source enables the generation of heralded single-photons - at a rate of 62 kHz with
gh(2)(0)=0.014±0.001, and the generation of energy-time entangled photons - with a visibility of
99.39±0.45% in the Franson interferometer. These results, at room temperature and telecom wavelength, in a CMOS compatible platform, represent an important step towards integrated quantum light devices for the quantum networks.
The field of photonic integrated circuits (PIC) has flourished in the past two decades, fueling numerous cutting-edge applications across sensing, networking, data interconnect, and quantum information processing. As a guiding material for PIC, Si
3N
4 has seen extensive use for its ultra-low loss, broad transparency, and diversity in implementation across both thin and thick films. Although the standard, traditional silicon dioxide (SiO
2) on silicon (Si) substrates that underpin the majority of Si
3N
4 photonics face drawbacks in the form of long-wavelength transparency limited by SiO
2, high-stress deposition for anomalous dispersion thick-film Si
3N
4, and leakage loss to the Si layer for low-confinement thin-film Si
3N
4. Featuring increased long-wavelength transparency into the mid-infrared, low-stress deposition of Si
3N
4, and a low index, this work investigates sapphire substrates as alternate hosts for Si
3N
4 photonics with greater spectral coverage and reduced fabrication complexity. This work presents a robust method of fabricating ultra-low loss photonic integrated circuits on a 500-nm-thick Si
3N
4-on-sapphire platform, exhibiting record-low losses below
0.1dB/cm. Implemented using this process are high-Q microrings with intrinsic quality factors in excess of
4.5×106 and coupled-ring photonic molecules to support nonlinear gain. Leveraging the achievable low loss and high-Q, this work further reports the first demonstration of Kerr-comb and soliton generation on the Si
3N
4-on-sapphire platform. These advances in loss, quality factor, and soliton generation on this versatile, broad-transparency platform pave the way for future work in spectroscopy and quantum-enhanced sensing across previously prohibited spectral regions for Si
3N
4 photonics with reduced fabrication complexity.