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Wide Band Fixed Tuned and Tuneable SIS Mixers for 230 GHz and 345 GHz Receivers - This paper arrived late and was inserted as last paper in Proceedings. (full paper begins on page 698)

Alexandre Karpov, M. C. Carter, B. Lazareff, M. Voß, Dominique Billon-Pierron, K. H. Gundlach

Published Apr 1, 1993• 0 citations
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IEEE Transactions on Magnetics•Mar 1, 1991•11 citations
The non-linear quasiparticle tunnel current flowing in a distributed superconductor-insulator-superconductor (SIS) transmission line resonator has been exploited in a low-noise heterodyne fixed-tuned waveguide receiver in the 600-720 GHz band. The mixer employs two 1.4 /spl mu/m wide half-wave or full-wave distributed SIS long junctions that are connected in series. These devices have been fabricated with optical lithography. Noise temperatures of 160-240 K have been measured at around 600 GHz. However, the achieved RF bandwidth is only about 5 % and the center frequency of the resonance is also shifted towards lower end of the target frequencies.
The performance of a broadband SIS (superconductor-insulator-superconductor) receiver with no mechanical tuning elements was modeled and tested. The mixer mount had a broadband-waveguide-to-microstripline transition consisting of a four-step Chebyshev single-ridge transformer. The last step of the ridge connected the waveguide to a microstripline circuit. The on-chip circuit consisted of a microstripline that transmitted the RF and the local oscillator signals to the SIS mixer. Both the SIS element and the inductor had RF grounds provided by 90 degrees radial stubs. The inductor tuned out the junction capacitance to allow operation over the full frequency band. The SIS element can be a single junction or series array using Nb-AlO/sub x/-Nb trilayer tunnel junctions with areas as small as 0.5 mu m/sup 2/ and V/sub m/(2 mV)=39 mV. Preliminary results indicated a DSB receiver noise temperature of 65-80 K across the band measured at 4.4 K with an internal cryogenic RF hot/cold source and with T/sub if/=21 K. With another device, a mixer noise temperature of 35 K at 100 GHz was achieved, increasing to 45 K at 79.5 and 110 GHz. Coupled mixer gain of up to +3 dB and negative dynamic resistance on the first photon step were observed. The lowest noise temperature was obtained for an untuned single-junction mixer at 80 GHz: T/sub R/=41 K and T/sub M/=20 K were measured.