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IEEE Transactions on Magnetics

A full-band waveguide SIS receiver with integrated tuning for 75-110 GHz

Dag Winkler, N. G. Ugras, A. Hodge Worsham, D. E. Prober, Neal R. Erickson, P. F. Goldsmith

Published Mar 1, 1991• 11 citations
Publisher

Abstract

The performance of a broadband SIS (superconductor-insulator-superconductor) receiver with no mechanical tuning elements was modeled and tested. The mixer mount had a broadband-waveguide-to-microstripline transition consisting of a four-step Chebyshev single-ridge transformer. The last step of the ridge connected the waveguide to a microstripline circuit. The on-chip circuit consisted of a microstripline that transmitted the RF and the local oscillator signals to the SIS mixer. Both the SIS element and the inductor had RF grounds provided by 90 degrees radial stubs. The inductor tuned out the junction capacitance to allow operation over the full frequency band. The SIS element can be a single junction or series array using Nb-AlO/sub x/-Nb trilayer tunnel junctions with areas as small as 0.5 mu m/sup 2/ and V/sub m/(2 mV)=39 mV. Preliminary results indicated a DSB receiver noise temperature of 65-80 K across the band measured at 4.4 K with an internal cryogenic RF hot/cold source and with T/sub if/=21 K. With another device, a mixer noise temperature of 35 K at 100 GHz was achieved, increasing to 45 K at 79.5 and 110 GHz. Coupled mixer gain of up to +3 dB and negative dynamic resistance on the first photon step were observed. The lowest noise temperature was obtained for an untuned single-junction mixer at 80 GHz: T/sub R/=41 K and T/sub M/=20 K were measured.

DOI
10.1109/20.133752

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A full-band waveguide SIS receiver with integrated tuning for 75-100 GHz

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This paper reports on the performance of a broadband SIS receiver with no mechanical tuning elements was scale modelled and tested. The mixer mount had a broadband waveguide to microstripline transition consisting of a 4-step Chebychev single ridge transformer. The last step of the ridge connected the waveguide to a microstripline circuit. The on-chip circuit consisted of a microstripline, which transmitted the rf and the local oscillator signals to the SIS mixer. Some chips included a thin film strip inductor in parallel with the mixer. Both the SIS element and the inductor had rf grounds provided by 90{degrees} radial stubs. The inductor tuned out the junction capacitance to allow operation over the full frequency band. The SIS element can be a single junction or series array using Nb/AlO{sub x}/Nb trilayer tunnel junctions with areas as small as 0.5 {mu}m{sup 2} and V{sub m}(2mV) = 39 mV. Preliminary results indicated a DSB receiver noise temperature of 65-80 K across the band measured at 4.4 K with an internal cryogenic rf hot/cold source and with T{sub if} = 21 K. With another device, we achieved a mixer noise temperature of 35 K at 100 GHz increasing to 45 K at 79.5 andmore » 110 GHZ. Coupled mixer gain of up to +3 dB and negative dynamic resistance on the first photon step were observed. The lowest noise temperature was obtained for an untuned single junction mixer at 80 GHz; T{sub R} = 41 K and T{sub M} = 20 K were measured.« less

IEEE Transactions on Magnetics•Mar 1, 1991•0 citations

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The mixer mount for a 75 -110 GHz SIS (superconductor-insulator-superconductor) receiver was scale modeled at 2 - 8 GHz . The mixer mount had a 4-step Chebychev single ridge transformer to launch the rf signal from the waveguide to a microstripline circuit. The microstripline circuit coupled the rf signal into the on-chip SIS element. A wire inductor in parallel with the mixer was used to tune out the capacitance of the SIS junction. Both the junction and the inductor had rf grounds provided by 90° radial stubs. In the scale model, a 50 Ω chip resistor in parallel with a 1 pF chip capacitor was used in place of the SIS junction to measure the rf matching properties. The inductor was modeled with a thin copper wire. The VSWR of the entire mount was less than 2.1 : 1 over the frequency band corresponding to 75 - 107 GHz. Receiver measurements with the actual mixer mount employing trilayer SIS tunnel junctions gave similar trends across the band.

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A heterodyne receiver using an SIS (superconductor-insulator-superconductor) waveguide mixer with two mechanical tuners has been built and characterized over the frequency range of 460 GHz to 630 GHz. This receiver is designed for radioastronomy applications. The mixer uses high-current-density, 0.25- mu m/sup 2/, Nb/AlO/sub x//Nb SIS tunnel junctions with integrated superconductive RF circuits to tune the junction capacitance. A DSB (double sideband) receiver noise temperature as low as 200+or-17 K has been obtained at 540 GHz. In addition, negative differential resistance has been observed in the DC I-V (current-voltage) curve at 487-491 GHz.>

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An SIS Mixer With 2hf/k DSB Noise Temperature at 163 - 211 GHz Band

Bhushan Billade, Alexey Pavolotsky, Victor Y. Belitsky

We present the design and the performance of a fixed-tuned, all niobium (Nb) Superconductor-Insulator-Superconductor (SIS) mixer covering RF frequencies from 163 to 211 GHz with 4-8 GHz IF bandwidth. The mixer uses two Nb/Al-AlOx/Nb junctions of size 3 μm2each with theRnAproduct of 30 Ω·μm2, in a twin junction configuration. An local oscillator (LO) directional coupler made of superconducting lines with slots in the ground plane is integrated on the SIS mixer chip. The isolated port of the LO coupler is terminated using a wide-band resistive load with a sheet resistance of 12 Ω/□. The SIS tuning circuitry is optimized to achieve best power match between the twin junctions and the embedding circuitry. The measurement of the double sideband mixer noise at 171 GHz shows that the receiver noise temperature is approximately 17 K, which is just 2hf/k. The estimated noise contribution from the RF loss and the IF chain at 176 GHz LO frequency is 8 K and 7.5 K respectively, resulting in a SIS mixer noise ofhf/2k. The mixer noise performance across the entire RF band varies between 19 to 25 K. This is to our knowledge the best reported noise temperature at these frequencies till now.

IEEE Transactions on Terahertz Science and Technology•May 2, 2013•20 citations
The performance of a broadband SIS (superconductor-insulator-superconductor) receiver with no mechanical tuning elements was modeled and tested. The mixer mount had a broadband-waveguide-to-microstripline transition consisting of a four-step Chebyshev single-ridge transformer. The last step of the ridge connected the waveguide to a microstripline circuit. The on-chip circuit consisted of a microstripline that transmitted the RF and the local oscillator signals to the SIS mixer. Both the SIS element and the inductor had RF grounds provided by 90 degrees radial stubs. The inductor tuned out the junction capacitance to allow operation over the full frequency band. The SIS element can be a single junction or series array using Nb-AlO/sub x/-Nb trilayer tunnel junctions with areas as small as 0.5 mu m/sup 2/ and V/sub m/(2 mV)=39 mV. Preliminary results indicated a DSB receiver noise temperature of 65-80 K across the band measured at 4.4 K with an internal cryogenic RF hot/cold source and with T/sub if/=21 K. With another device, a mixer noise temperature of 35 K at 100 GHz was achieved, increasing to 45 K at 79.5 and 110 GHz. Coupled mixer gain of up to +3 dB and negative dynamic resistance on the first photon step were observed. The lowest noise temperature was obtained for an untuned single-junction mixer at 80 GHz: T/sub R/=41 K and T/sub M/=20 K were measured.
This paper reports on the performance of a broadband SIS receiver with no mechanical tuning elements was scale modelled and tested. The mixer mount had a broadband waveguide to microstripline transition consisting of a 4-step Chebychev single ridge transformer. The last step of the ridge connected the waveguide to a microstripline circuit. The on-chip circuit consisted of a microstripline, which transmitted the rf and the local oscillator signals to the SIS mixer. Some chips included a thin film strip inductor in parallel with the mixer. Both the SIS element and the inductor had rf grounds provided by 90{degrees} radial stubs. The inductor tuned out the junction capacitance to allow operation over the full frequency band. The SIS element can be a single junction or series array using Nb/AlO{sub x}/Nb trilayer tunnel junctions with areas as small as 0.5 {mu}m{sup 2} and V{sub m}(2mV) = 39 mV. Preliminary results indicated a DSB receiver noise temperature of 65-80 K across the band measured at 4.4 K with an internal cryogenic rf hot/cold source and with T{sub if} = 21 K. With another device, we achieved a mixer noise temperature of 35 K at 100 GHz increasing to 45 K at 79.5 andmore » 110 GHZ. Coupled mixer gain of up to +3 dB and negative dynamic resistance on the first photon step were observed. The lowest noise temperature was obtained for an untuned single junction mixer at 80 GHz; T{sub R} = 41 K and T{sub M} = 20 K were measured.« less
The mixer mount for a 75 -110 GHz SIS (superconductor-insulator-superconductor) receiver was scale modeled at 2 - 8 GHz . The mixer mount had a 4-step Chebychev single ridge transformer to launch the rf signal from the waveguide to a microstripline circuit. The microstripline circuit coupled the rf signal into the on-chip SIS element. A wire inductor in parallel with the mixer was used to tune out the capacitance of the SIS junction. Both the junction and the inductor had rf grounds provided by 90° radial stubs. In the scale model, a 50 Ω chip resistor in parallel with a 1 pF chip capacitor was used in place of the SIS junction to measure the rf matching properties. The inductor was modeled with a thin copper wire. The VSWR of the entire mount was less than 2.1 : 1 over the frequency band corresponding to 75 - 107 GHz. Receiver measurements with the actual mixer mount employing trilayer SIS tunnel junctions gave similar trends across the band.
A fixed-tuned SIS(Superconductor-Insulator-Superconductor) mixer across 120∼180 GHz band has been developed. This mixer employs an SIS chip fabricated by Nobeyama radio observatory which consists of a series array of 6 Nb/Al-AlO/Nb junctions in a microstrip line on a fused quartz substrate. The SIS chip is placed at the center of the half-height waveguide mixer mount to have a good incoming signal coupling over the whole frequency band. No mechanical tuner was used in the SIS mixer and the RF signal and local oscillator power are injected to the mixer via a cooled cross-guide coupler. In order to prevent the IF signal loss, the If output impedance of the SIS mixer was matched to the 50 input impedance of the IF chain. Measured double sideband noise temperatures of a receiver using the SIS mixer are 32∼131 K over 120∼180 GHz band. The developed SIS mixer is now in use for radio astronomical observations on the TRAO 14 m radio telescope.
A heterodyne receiver using an SIS (superconductor-insulator-superconductor) waveguide mixer with two mechanical tuners has been built and characterized over the frequency range of 460 GHz to 630 GHz. This receiver is designed for radioastronomy applications. The mixer uses high-current-density, 0.25- mu m/sup 2/, Nb/AlO/sub x//Nb SIS tunnel junctions with integrated superconductive RF circuits to tune the junction capacitance. A DSB (double sideband) receiver noise temperature as low as 200+or-17 K has been obtained at 540 GHz. In addition, negative differential resistance has been observed in the DC I-V (current-voltage) curve at 487-491 GHz.>
The authors have tested the performance of planar SIS (superconductor-insulator-superconductor) mixers with log-periodic antennas at near millimeter and submillimeter wave frequencies from 90 to 360 GHz. The large omega R/sub N/C product ( approximately 10 at 90 GHz) of the Nb/NbO/sub x//Pb-In-Au junctions requires an integrated inductive tuning element to resonate the junction capacitance at the operating frequencies. Two types of integrated tuning element were used which were designed with the aid of measurements using a Fourier transform spectrometer. Preliminary results indicate that the tuning elements can give very good mixer performance up to at least 200 GHz. An inductive wire in parallel with a 5-junction array gives a minimum mixer noise temperature of 115 K (DSB) at 90 GHz with a FWHM (full width at half maximum) bandwidth of 8 GHz. An open-ended microstrip stub in parallel with a single junction gives minimum mixer noise temperatures at 150 and 200 K (DSB) near 90 and 180 GHz with FWHM bandwidths of 4 and 3 GHz, respectively. The relatively high mixer noise temperatures compared to those of waveguide SIS mixers in a similar frequency range are attributed mainly to the losses in the optical system.>
We present the design and the performance of a fixed-tuned, all niobium (Nb) Superconductor-Insulator-Superconductor (SIS) mixer covering RF frequencies from 163 to 211 GHz with 4-8 GHz IF bandwidth. The mixer uses two Nb/Al-AlOx/Nb junctions of size 3 μm2each with theRnAproduct of 30 Ω·μm2, in a twin junction configuration. An local oscillator (LO) directional coupler made of superconducting lines with slots in the ground plane is integrated on the SIS mixer chip. The isolated port of the LO coupler is terminated using a wide-band resistive load with a sheet resistance of 12 Ω/□. The SIS tuning circuitry is optimized to achieve best power match between the twin junctions and the embedding circuitry. The measurement of the double sideband mixer noise at 171 GHz shows that the receiver noise temperature is approximately 17 K, which is just 2hf/k. The estimated noise contribution from the RF loss and the IF chain at 176 GHz LO frequency is 8 K and 7.5 K respectively, resulting in a SIS mixer noise ofhf/2k. The mixer noise performance across the entire RF band varies between 19 to 25 K. This is to our knowledge the best reported noise temperature at these frequencies till now.