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Joint International Symposium on Optical Memory and Optical Data Storage

Future Trends In Frequency-seiective Optical Memories

Rong Ao, D. Haarer

Published Jan 1, 1993• 1 citation
Publisher

Abstract

The scheme of frequency selective hole burning memories was invented about 15 years ago /1/ and has caused world wide activities /2/ in the search for realizing a prototype memory which would be suited for technical implementation. In our view such an implementation has so far not been achieved due to the following reasons:
DOI
10.1109/omods.1993.696737

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For the last few years, there has been considerable research activity at the IBM San Jose Research Laboratory devoted to frequency domain optical memories based upon photochemical hole burning (PHB). The PHB phenomenon allows optical frequency to be utilized as an additional dimension for the organization of optical memories1 and offers the potential of achieving a 103 gain in achievable storage density over conventional optical memories and a factor of 3 × 104 gain over inductive magnetic recording.
Recently there has been considerable interest in frequency domain optical memories based on the cryogenic phenomenon of photochemical hole burning.1 This phenomenon occurs whenever persistent photochemical changes can be induced by exposure to narrowband optical radiation tuned to a frequency within the inhomogeneously broadened zero phonon line of a photoactive material contained In a host. The narrowband radiation selectively excites that fraction of molecules whose homogeneous linewidth overlaps the excitation frequency. The ensuing photochemical reaction results in a persistent narrow dip or hole in the line shape. Since typical ratios of inhomogeneous- to-homogeneous widths are of the order of 103, 103 resolvable holes can be burned into the inhomogeneous line at each spatial location in the sample. Thus the storage density in such a frequency domain optical memory might ultimately be 103 higher than in a conventional optical memory.
Due to the long wavelength of visible light, most straight forward optical methods, like absorption or emission spectroscopy, are not well suited for spectroscopy on a “molecular level”. The hole-burning method is a selective spectroscopy scheme based on energy selection. This method yields, at low temperatures, very high spectral resolution and, hence, can be used to investigate molecular environments and molecular potentials. With the simultaneous application of external fields the hole-burning technique is a true two-dimensional spectroscopy method. Hole-burning can also be used for enhancing the schemes of presently used optical memories by many orders of magnitude. In this context new developments based on the use of semiconductor laser diodes are reported. The question of the requirement of low temperatures is also critically reviewed and, finally, a comparison between mesoscopic storage schemes and molecular schemes is given.