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Japanese Journal of Applied Physics

Future Trends in Frequency-Selective Optical Memories

Rong Ao, L. Kümmerl, D. Haarer

Published Nov 1, 1993• 4 citations
Publisher

Abstract

Several recent advances are reported in a study of a possible technical implementation of frequency-selective optical memories. After taking into account some engineering considerations, such memories can be constructed which have the potential of being operated at room temperature, with a gain of a factor of at least 10, most likely in both storage density and access rate, as compared to conventional optical memories.

DOI
10.1143/jjap.32.5248

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Several recent advances are reported in a study of a possible technical implementation of frequency-selective optical memories. After taking into account some engineering considerations, such memories can be constructed which have the potential of being operated at room temperature, with a gain of a factor of at least 10, most likely in both storage density and access rate, as compared to conventional optical memories.
For the last few years, there has been considerable research activity at the IBM San Jose Research Laboratory devoted to frequency domain optical memories based upon photochemical hole burning (PHB). The PHB phenomenon allows optical frequency to be utilized as an additional dimension for the organization of optical memories1 and offers the potential of achieving a 103 gain in achievable storage density over conventional optical memories and a factor of 3 × 104 gain over inductive magnetic recording.
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