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Conference on Lasers and Electro-Optics

Reciprocating optical modulation on Erbium doped LiNbO3 for harmonic generation

So Kogahara, Hirochika Nakajima, Satoshi Shinada, Shinya Nakajima, Tetsuya Kawanishi, Masayuki Izutsu

Published May 1, 2007• 0 citations
Publisher

Abstract

We demonstrated reciprocating optical modulation with Er-doped LiNbO3for high- order sideband generation, where reciprocating modulation process can be selectively amplified. The sideband component of 50 GHz was successfully enhanced. The gain was 8 dB.
DOI
10.1109/cleo.2007.4453661

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Abstract Optical amplifiers are fundamental to modern photonics, enabling long-distance communications, precision sensing, and quantum information processing. Erbium-doped amplifiers dominate telecommunications but are restricted to specific wavelength bands, while semiconductor amplifiers offer broader coverage but suffer from high noise and nonlinear distortions. Optical parametric amplifiers (OPAs) promise broadband, quantum-limited amplification across arbitrary wavelengths. However, their miniaturization and deployment has been hampered by watt-level power requirements. Here we demonstrate an integrated OPA on thin-film lithium niobate that achieves > 17 dB gain with < 200 mW input power -- an order of magnitude improvement over previous demonstrations. Our second-harmonic-resonant design enhances both pump generation efficiency (95% conversion) and pump power utilization through recirculation, without sacrificing bandwidth. The resonant architecture increases the effective pump power by nearly an order of magnitude compared to conventional single-pass designs, while also multiplexing the signal and pump. We demonstrate flat near-quantum-limited noise performance over 110 nm. Our low-power architecture enables practical on-chip OPAs for next generation quantum and classical photonics.