Abstract Optical amplifiers are fundamental to modern photonics, enabling long-distance communications, precision sensing, and quantum information processing. Erbium-doped amplifiers dominate telecommunications but are restricted to specific wavelength bands, while semiconductor amplifiers offer broader coverage but suffer from high noise and nonlinear distortions. Optical parametric amplifiers (OPAs) promise broadband, quantum-limited amplification across arbitrary wavelengths. However, their miniaturization and deployment has been hampered by watt-level power requirements. Here we demonstrate an integrated OPA on thin-film lithium niobate that achieves > 17 dB gain with < 200 mW input power -- an order of magnitude improvement over previous demonstrations. Our second-harmonic-resonant design enhances both pump generation efficiency (95% conversion) and pump power utilization through recirculation, without sacrificing bandwidth. The resonant architecture increases the effective pump power by nearly an order of magnitude compared to conventional single-pass designs, while also multiplexing the signal and pump. We demonstrate flat near-quantum-limited noise performance over 110 nm. Our low-power architecture enables practical on-chip OPAs for next generation quantum and classical photonics.
Abstract Optical amplifiers are fundamental to modern photonics, enabling long-distance communications, precision sensing, and quantum information processing. Erbium-doped amplifiers dominate telecommunications but are restricted to specific wavelength bands, while semiconductor amplifiers offer broader coverage but suffer from high noise and nonlinear distortions. Optical parametric amplifiers (OPAs) promise broadband, quantum-limited amplification across arbitrary wavelengths. However, their miniaturization and deployment has been hampered by watt-level power requirements. Here we demonstrate an integrated OPA on thin-film lithium niobate that achieves > 17 dB gain with < 200 mW input power -- an order of magnitude improvement over previous demonstrations. Our second-harmonic-resonant design enhances both pump generation efficiency (95% conversion) and pump power utilization through recirculation, without sacrificing bandwidth. The resonant architecture increases the effective pump power by nearly an order of magnitude compared to conventional single-pass designs, while also multiplexing the signal and pump. We demonstrate flat near-quantum-limited noise performance over 110 nm. Our low-power architecture enables practical on-chip OPAs for next generation quantum and classical photonics.
Optical parametric amplifiers (OPAs) are promising to overcome the wavelength coverage and noise limitations in conventional optical amplifiers based on rare-earth doping and semiconductor gain. However, the high power requirement remains a major obstacle to the widespread use of OPAs. Integrated OPAs can in principle improve the pump efficiency with tight mode confinement; however, challenges associated with propagation loss, limited nonlinearity, and susceptibility to nanoscale fabrication imperfections prevent them from competing with conventional bulk and fiber-based OPAs. Here, we demonstrate a highly efficient integrated OPAs with continuous-wave net gain. The pump efficiency is improved by over one order of magnitude. Phase-sensitive gain of 23.5 dB is demonstrated, significantly exceeding previous integrated OPAs, using only 110 mW pump power and no cavity enhancement. This is achieved with parametric down-conversion in thin-film lithium niobate waveguides using the adapted poling technique to maintain the coherence of nonlinear interactions. Moreover, the high parametric gain exceeds fibre-chip-fibre losses, leading to appreciable net gain up to 10 dB. The 3 dB bandwidth is approximately 120 nm, covering telecommunication S-, C-, and Lbands. Quantum-limited noise performance is confirmed through the measurement of output field fluctuation below the classical limit. We further demonstrate that signalto-noise ratio in noisy optical communications can be increased by leveraging this efficient integrated OPA. Our work marks a significant step towards ideal optical amplifiers with strong amplification, high efficiency, quantum-limited noise, large bandwidth, and continuous-wave operation, unlocking new possibilities for next-generation photonic information processing systems.
Although thin-film lithium niobate (TFLN) facilitates efficient signal generation and nonlinear and quantum interactions, the realization of optical parametric amplification (OPA) that can provide simultaneous ultra-broadband and high-gain operation in an integrated chip continues to pose a challenge. Here we demonstrate continuous-wave-pumped OPA in an X-cut MgO-doped, dispersion-engineered, and adaptively-poled TFLN waveguide of 1.6 cm length, achieving a flat-top profile covering a 450 nm-wide optical wavelength window, corresponding to a 3-dB gain bandwidth of about 56 THz. Among reported TFLN platforms, our device exhibits the broadest 3-dB gain bandwidth. The same device can be pumped either directly at visible wavelengths through second-order x(2) interactions or in the telecom band through cascaded x(2) processes, the latter eliminating the need for a high-power visible pump laser. We achieve maximum gains of 8.87 +- 0.39 dB and 10.79 +- 0.43 dB at on-chip pump powers of 74 mW and 170 mW for the direct and cascaded schemes, respectively. We further directly probe OPA gain across the 1650-1900 nm wavelength range, where experimental gain measurements have remained scarce. With a normalized on-chip gain of 1.21 dB per W per mm, our device sets a new benchmark among reported cascaded x(2) nonlinear processes. This work advances the realization of integrated optical parametric amplifiers, offering high efficiency, robust gain, ultra-broadband bandwidth, and continuous-wave operation, thereby enabling new capabilities for next-generation quantum sensing and photonic systems.
Achieving broadband on-chip optical amplification spanning the visible and near-infrared (NIR) can enable diverse quantum sensing, metrology, and classical communication applications within a single unified device. However, conventional semiconductor and ion-doped amplifiers suffer from limited gain bandwidths set by fixed energy levels, while optical parametric amplifiers (OPAs) operating continuously from the visible to the NIR have remained elusive due to dispersion-limited bandwidth and the high pump powers required in the visible or ultraviolet (UV). Here, we overcome these limitations by introducing an electrically reconfigurable OPA architecture on lithium niobate integrated photonics. By synergistically combining ultra-high effective χ(2) nonlinearity ($\sim7,000%/W−cm^2$), high-order dispersion engineering, and local electro-thermal tuning of quasi-phase matching, our device achieves record gain spectral spanning more than an optical octave, from 770 to 1650 nm. This range covers key transitions of many photonic quantum systems and all telecommunication bands. Moreover, our approach eliminates the need for high-power, wavelength-tunable visible or UV pumps, delivering a peak on-chip gain of 23.67 dB with a single 1060 nm pump at 90 mW average on-chip power. This work opens new avenues for multi-functional, reconfigurable photonics unifying the visible and infrared regimes, with broad implications for quantum sensing and communications.
Thin-film lithium niobate (TFLN) has recently emerged as a promising platform for integrated nonlinear photonics, enabling the use of optical parametric amplifiers (OPAs) for applications in quantum information processing, precision metrology, and ultrafast optical signal processing. However, OPA waveguide designs have not yet achieved the phase-matching conditions for type-0 operation in a single spectro-temporal mode, limiting their use. We optimize the waveguide dimensions, poling pattern, pump wavelength, and pump pulse duration for high spectral purity, a metric for single-mode fidelity. We numerically demonstrate a nanophotonic OPA with a spectral purity of 0.982 in a TFLN waveguide. Through semi-classical simulations, we further demonstrate that in the optical parametric regime, where vacuum fluctuations at the input of the OPA can saturate the gain and deplete the pump, the macroscopic output of such a single-mode OPA can be utilized for an ultra-fast quantum random number generator. These results demonstrate a promising direction for integrated OPAs in a wide range of ultrafast quantum nanophotonics applications.
Quantum noise limits the sensitivity of optical measurements, but squeezed states of light enable quantum-enhanced metrology, sensing, and information processing. Most on-chip squeezed-light sources rely on Kerr (χ(3)) nonlinearities, remain limited by pump power and excess loss constraints. Quadratic (χ(2)) platforms instead provide stronger parametric interactions, lower pump power requirements, and greater spectral engineering flexibility. Here, we demonstrate strong, broadband squeezed-light generation on a thin-film lithium niobate (TFLN) photonic chip using a dual-resonant optical parametric amplifier implemented in a single periodically poled LN (PPLN) microresonator. Near-full-depth domain inversion is achieved simultaneously with highly over-coupled resonances, exhibiting escape efficiencies exceeding 90% and intrinsic quality factors above 2.5 million in a 0.6 mm2 X-cut TF-PPLN resonator, enabling efficient squeezing at 1587 nm when pumped at 793.5 nm. Operating in the continuous-wave regime, we directly measure -0.81 dB of squeezing below the shot-noise limit with a pump power of 27 mW, together with +4.29 dB of anti-squeezing. From these measurements, we infer an on-chip squeezing level of -7.52 dB ± 0.22 dB (95% confidence interval: [-7.96,-7.10] dB), and an on-chip anti-squeezing level of +9.62 dB ± 0.25 dB. We demonstrate single-mode squeezing at degeneracy with a squeezed-light spectrum exceeding 10.3 THz. This work reports the highest squeezing ratio among integrated χ(2) cavity platforms and the first quasi-phase matched, fully resonant χ(2) cavity squeezer on chip, establishing a scalable route to fully integrated power-efficient squeezed-light sources for quantum-enhanced sensing and metrology.
Abstract Quantum noise limits the sensitivity of optical measurements, but squeezed states of light enable quantum-enhanced metrology, sensing, and information processing. Most on-chip squeezed-light sources rely on Kerr (χ(3)) nonlinearities, remain limited by pump power and excess loss constraints. Quadratic (χ(2)) platforms instead provide stronger parametric interactions, lower pump power requirements, and greater spectral engineering flexibility. Here, we demonstrate strong, broadband squeezed-light generation on a thin-film lithium niobate (TFLN) photonic chip using a dual-resonant optical parametric amplifier implemented in a single periodically poled LN (PPLN) microresonator. Near-full-depth domain inversion is achieved simultaneously with highly over-coupled resonances, exhibiting escape efficiencies exceeding 90% and intrinsic quality factors above 2.5 million in a 0.6mm2 X-cut TF-PPLN resonator, enabling efficient squeezing at 1587nm when pumped at 793.5 nm. Operating in the continuous-wave regime, we directly measure −0.81 dB of squeezing below the shot-noise limit with a pump power of 27mW, together with +4.29 dB of anti-squeezing. From these measurements, we infer an on-chip squeezing level of −7.52 dB±0.22 dB (95% confidence interval: [−7.96,−7.10] dB), and an on-chip anti-squeezing level of +9.62 dB±0.25 dB . We demonstrate single-mode squeezing at degeneracy with a squeezed-light spectrum exceeding 10.3 THz. This work reports the highest squeezing ratio among integrated χ(2) cavity platforms and the first quasi-phase matched, fully resonant χ(2) cavity squeezer on chip, establishing a scalable route to fully integrated power-efficient squeezed-light sources for quantum-enhanced sensing and metrology.