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Quantum squeezing in an all-resonant periodically poled lithium niobate microresonator

Mengjie Yu, Xinyi Ren, Reshma Kopparapu, Tushar Sanjay Karnik, Chunho Lee, Kiwon Kwon, Clayton Cheung, Yue Yu, Shi-Yuan Ma, Bohan Wu, Ran Yin, Lian Zhou, Quntao Zhuang, Dirk Englund, Zaijun Chen

Published Mar 10, 2026• 0 citations
Publisher

Abstract

Abstract Quantum noise limits the sensitivity of optical measurements, but squeezed states of light enable quantum-enhanced metrology, sensing, and information processing. Most on-chip squeezed-light sources rely on Kerr (χ(3)) nonlinearities, remain limited by pump power and excess loss constraints. Quadratic (χ(2)) platforms instead provide stronger parametric interactions, lower pump power requirements, and greater spectral engineering flexibility. Here, we demonstrate strong, broadband squeezed-light generation on a thin-film lithium niobate (TFLN) photonic chip using a dual-resonant optical parametric amplifier implemented in a single periodically poled LN (PPLN) microresonator. Near-full-depth domain inversion is achieved simultaneously with highly over-coupled resonances, exhibiting escape efficiencies exceeding 90% and intrinsic quality factors above 2.5 million in a 0.6mm2 X-cut TF-PPLN resonator, enabling efficient squeezing at 1587nm when pumped at 793.5 nm. Operating in the continuous-wave regime, we directly measure −0.81 dB of squeezing below the shot-noise limit with a pump power of 27mW, together with +4.29 dB of anti-squeezing. From these measurements, we infer an on-chip squeezing level of −7.52 dB±0.22 dB (95% confidence interval: [−7.96,−7.10] dB), and an on-chip anti-squeezing level of +9.62 dB±0.25 dB . We demonstrate single-mode squeezing at degeneracy with a squeezed-light spectrum exceeding 10.3 THz. This work reports the highest squeezing ratio among integrated χ(2) cavity platforms and the first quasi-phase matched, fully resonant χ(2) cavity squeezer on chip, establishing a scalable route to fully integrated power-efficient squeezed-light sources for quantum-enhanced sensing and metrology.

DOI
10.21203/rs.3.rs-8673396/v1

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Quantum noise limits the sensitivity of optical measurements, but squeezed states of light enable quantum-enhanced metrology, sensing, and information processing. Most on-chip squeezed-light sources rely on Kerr ($χ^{(3)}$) nonlinearities, remain limited by pump power and excess loss constraints. Quadratic ($χ^{(2)}$) platforms instead provide stronger parametric interactions, lower pump power requirements, and greater spectral engineering flexibility. Here, we demonstrate strong, broadband squeezed-light generation on a thin-film lithium niobate (TFLN) photonic chip using a dual-resonant optical parametric amplifier implemented in a single periodically poled LN (PPLN) microresonator. Near-full-depth domain inversion is achieved simultaneously with highly over-coupled resonances, exhibiting escape efficiencies exceeding 90% and intrinsic quality factors above 2.5 million in a 0.6 mm$^2$ X-cut TF-PPLN resonator, enabling efficient squeezing at 1587 nm when pumped at 793.5 nm. Operating in the continuous-wave regime, we directly measure -0.81 dB of squeezing below the shot-noise limit with a pump power of 27 mW, together with +4.29 dB of anti-squeezing. From these measurements, we infer an on-chip squeezing level of -7.52 dB $\pm$ 0.22 dB (95% confidence interval: [-7.96,-7.10] dB), and an on-chip anti-squeezing level of +9.62 dB $\pm$ 0.25 dB. We demonstrate single-mode squeezing at degeneracy with a squeezed-light spectrum exceeding 10.3 THz. This work reports the highest squeezing ratio among integrated $χ^{(2)}$ cavity platforms and the first quasi-phase matched, fully resonant $χ^{(2)}$ cavity squeezer on chip, establishing a scalable route to fully integrated power-efficient squeezed-light sources for quantum-enhanced sensing and metrology.

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Abstract Quantum noise limits the sensitivity of optical measurements, but squeezed states of light enable quantum-enhanced metrology, sensing, and information processing. Most on-chip squeezed-light sources rely on Kerr (χ(3)) nonlinearities, remain limited by pump power and excess loss constraints. Quadratic (χ(2)) platforms instead provide stronger parametric interactions, lower pump power requirements, and greater spectral engineering flexibility. Here, we demonstrate strong, broadband squeezed-light generation on a thin-film lithium niobate (TFLN) photonic chip using a dual-resonant optical parametric amplifier implemented in a single periodically poled LN (PPLN) microresonator. Near-full-depth domain inversion is achieved simultaneously with highly over-coupled resonances, exhibiting escape efficiencies exceeding 90% and intrinsic quality factors above 2.5 million in a 0.6mm2 X-cut TF-PPLN resonator, enabling efficient squeezing at 1587nm when pumped at 793.5 nm. Operating in the continuous-wave regime, we directly measure −0.81 dB of squeezing below the shot-noise limit with a pump power of 27mW, together with +4.29 dB of anti-squeezing. From these measurements, we infer an on-chip squeezing level of −7.52 dB±0.22 dB (95% confidence interval: [−7.96,−7.10] dB), and an on-chip anti-squeezing level of +9.62 dB±0.25 dB . We demonstrate single-mode squeezing at degeneracy with a squeezed-light spectrum exceeding 10.3 THz. This work reports the highest squeezing ratio among integrated χ(2) cavity platforms and the first quasi-phase matched, fully resonant χ(2) cavity squeezer on chip, establishing a scalable route to fully integrated power-efficient squeezed-light sources for quantum-enhanced sensing and metrology.
Quantum noise limits the sensitivity of optical measurements, but squeezed states of light enable quantum-enhanced metrology, sensing, and information processing. Most on-chip squeezed-light sources rely on Kerr (χ(3)χ^{(3)}χ(3)) nonlinearities, remain limited by pump power and excess loss constraints. Quadratic (χ(2)χ^{(2)}χ(2)) platforms instead provide stronger parametric interactions, lower pump power requirements, and greater spectral engineering flexibility. Here, we demonstrate strong, broadband squeezed-light generation on a thin-film lithium niobate (TFLN) photonic chip using a dual-resonant optical parametric amplifier implemented in a single periodically poled LN (PPLN) microresonator. Near-full-depth domain inversion is achieved simultaneously with highly over-coupled resonances, exhibiting escape efficiencies exceeding 90% and intrinsic quality factors above 2.5 million in a 0.6 mm2^22 X-cut TF-PPLN resonator, enabling efficient squeezing at 1587 nm when pumped at 793.5 nm. Operating in the continuous-wave regime, we directly measure -0.81 dB of squeezing below the shot-noise limit with a pump power of 27 mW, together with +4.29 dB of anti-squeezing. From these measurements, we infer an on-chip squeezing level of -7.52 dB ±\pm± 0.22 dB (95% confidence interval: [-7.96,-7.10] dB), and an on-chip anti-squeezing level of +9.62 dB ±\pm± 0.25 dB. We demonstrate single-mode squeezing at degeneracy with a squeezed-light spectrum exceeding 10.3 THz. This work reports the highest squeezing ratio among integrated χ(2)χ^{(2)}χ(2) cavity platforms and the first quasi-phase matched, fully resonant χ(2)χ^{(2)}χ(2) cavity squeezer on chip, establishing a scalable route to fully integrated power-efficient squeezed-light sources for quantum-enhanced sensing and metrology.
Quantum squeezed states of light can enhance measurement sensitivity beyond classical limits and enable quantum information processing, but scalable low-loss sources remain challenging. We demonstrate continuous-wave quantum squeezing on a chip, achieving 18 dB of squeezing and 20 dB of anti-squeezing at 1570 nm in a 1.6-cm traveling-wave adaptively poled thin-film lithium niobate waveguide. A distributed model independently determines facet losses, phase noise, and nonlinear interaction strength without prior assumptions, enabling rigorous inference of on-chip performance. We estimate a 95% confidence interval of [-18.96, -17.25] dB squeezing and [19.96, 21.35] dB anti-squeezing. These values represent the highest squeezing reported for any integrated photonic platform and the first assumption-free statistical validation of integrated squeezing performance. Our results establish thin-film lithium niobate as a high-performance, scalable platform for continuous-variable quantum sensing, communications, and photonic computing.
Squeezed states of light play a key role in quantum-enhanced sensing and continuous-variable quantum information processing. Realizing integrated squeezed light sources is crucial for developing compact and scalable photonic quantum systems. In this work, we demonstrate on-chip broadband vacuum squeezing at telecommunication wavelengths on the thin-film lithium niobate (TFLN) platform. Our device integrates periodically poled lithium niobate (PPLN) nanophotonic waveguides with low-loss edge couplers, comprising bilayer inverse tapers and an SU-8 polymer waveguide. This configuration achieves a fiber-to-chip coupling loss of 1.4 dB and a total homodyne detection loss of 4.0 dB, enabling a measured squeezing level of 1.4 dB. Additional measurements in a more efficient PPLN waveguide (without low-loss couplers) infer an on-chip squeezing level of approximately 10 dB at a pump power of 62 mW. These results underscore the potential of TFLN platform for efficient and scalable squeezed light generation.
Squeezed light is a key quantum resource that enables quantum advantages for sensing, networking, and computing applications. The scalable generation and manipulation of squeezed light with integrated platforms are highly desired for the development of quantum technology with continuous variables. In this Letter, we demonstrate squeezed light generation with thin-film lithium niobate integrated photonics. Parametric down-conversion is realized with quasi-phase matching using ferroelectric domain engineering. With sub-wavelength mode confinement, efficient nonlinear processes can be observed with single-pass configuration. We measure 0.56 ± 0.09 dB quadrature squeezing (∼2.6 dB inferred on-chip). The single-pass configuration further enables the generation of squeezed light with large spectral bandwidth up to 7 THz. This work represents a significant step towards the on-chip implementation of continuous-variable quantum information processing.
Quantum optical technologies promise advances in sensing, computing, and communication. A key resource is squeezed light, where quantum noise is redistributed between optical quadratures. We introduce a monolithic, chip-scale platform that exploits the χ (2) nonlinearity of a thin-film lithium niobate (TFLN) resonator device to efficiently generate squeezed states of light. Our system integrates all essential components—except for the laser and two detectors—on a single chip with an area of one square centimeter, reducing the size, operational complexity, and power consumption associated with conventional setups. Using the balanced homodyne measurement subsystem that we implemented on the same chip, we measure a squeezing of 0.55 decibels and an anti-squeezing of 1.55 decibels. We use 20 milliwatts of input power to generate the parametric oscillator pump field by using second harmonic generation on the same chip. Our work represents a step toward compact and efficient quantum optical systems posed to leverage the rapid advances in integrated nonlinear and quantum photonics.