Optical double resonance studies of excited states of TmI with microsecond lifetimes

Baodong Yang, Yi Liu, Junmin Wang

F. Bylicki, H.G. Weber

B. Budick, A. Simievic

Timothy Draher, Nolan Bitner, Vasileios Niaouris +6 more

Vanadium color centers in silicon carbide (SiC) offer telecom O-band emission, sub-microsecond optical lifetimes, and second-scale spin relaxation times, rendering them promising candidates for quantum network nodes. However, efficient photon extraction from the high-refractive-index SiC host remains challenging. Here, we introduce a silicon-on-SiC heterogeneous photonic platform in which silicon nanocavities evanescently couple to shallow vanadium dopants in commercial 4H-SiC, enabling efficient zero-phonon line (ZPL) collection under resonant excitation. In as-grown ensembles, we observe Purcell-enhanced photoluminescence with transient spectral hole burning linewidths of 50 MHz on microsecond timescales. In dilute implanted samples, we isolate individual vanadium centers with high-purity single photon emission and a Purcell-enhanced lifetime of 109 ns. The entire optical interface operates through a single lensed fiber, including a 905 nm repump laser that recovers the vanadium charge state with 95% efficiency. These results establish Si-on-SiC as a scalable, foundry-compatible platform for telecom-wavelength spin-photon interfaces.

W. Happer, E. B. Saloman

Lifetimes of orientation and alignment of excited atomic states examined in level crossing and optical double resonance experiments employing polarized light

Alan Corney