The nitrogen-vacancy (NV) centers in diamond have the advantages of stable triaxial structure, ultra-long electron spin coherence time and simple optical readout at room temperature. A nitrogen atom in the diamond crystal replaces a carbon atom and a vacancy is generated at the adjacent position, forming a point defect in the C3v space group structure. Its ground state and excited state are both spin triplet states. It is the key to achieving efficient preparation of optical initial state and extracting NV color center’s information in the researches of highly sensitive sensing magnetic detection, temperature detection, biological imaging, quantum computing, etc. However, there was no systematic study on relevant parameters of laser for high-concentration NV color center’s samples in previous experimental studies. Based on a high concentration diamond NV ensemble, we use pulsed optical detection magnetic resonance (ODMR) technology to systematically study the relationship among laser initial polarization time, information reading time and laser power, and the influence of laser incident polarization angle on the accuracy of sensing information. The effects of various laser parameters on the NV1 peak of ODMR on the [111] axis of the NVs of diamond are also investigated. The contrast of ODMR increases firstly with a sigmoid function and then decreases with an e-exponential function as the information reading time increases. The incident polarization angle of the laser is sinusoidal, with a period of 90°. According to the above experimental results, we finally choose the appropriate experimental parameters at 45.8 W/cm2 (300 μs of polarization, 700 ns, reading time, laser incident angle is 220°) for ODMR test. Compared with previous experimental parameters (polarization time was 50 us, read the time of 3000 ns, laser incident angle was 250°), the experimental results show that the contrast of ODMR increases from 2.1% to 4.6%, and the typical magnetic sensitivity is improved from 21.6 nT/Hz1/2 to 5.6 nT/Hz1/2. The optimization of the optical control of NVs in solid diamond is realized. The above results provide an effective support for the detection of high-sensitivity manipulation sensing based on high-concentration NV ensemble.
The nitrogen-vacancy (NV) centers in diamond have the advantages of stable triaxial structure, ultra-long electron spin coherence time and simple optical readout at room temperature. A nitrogen atom in the diamond crystal replaces a carbon atom and a vacancy is generated at the adjacent position, forming a point defect in the C3v space group structure. Its ground state and excited state are both spin triplet states. It is the key to achieving efficient preparation of optical initial state and extracting NV color center’s information in the researches of highly sensitive sensing magnetic detection, temperature detection, biological imaging, quantum computing, etc. However, there was no systematic study on relevant parameters of laser for high-concentration NV color center’s samples in previous experimental studies. Based on a high concentration diamond NV ensemble, we use pulsed optical detection magnetic resonance (ODMR) technology to systematically study the relationship among laser initial polarization time, information reading time and laser power, and the influence of laser incident polarization angle on the accuracy of sensing information. The effects of various laser parameters on the NV1 peak of ODMR on the [111] axis of the NVs of diamond are also investigated. The contrast of ODMR increases firstly with a sigmoid function and then decreases with an e-exponential function as the information reading time increases. The incident polarization angle of the laser is sinusoidal, with a period of 90°. According to the above experimental results, we finally choose the appropriate experimental parameters at 45.8 W/cm2 (300 μs of polarization, 700 ns, reading time, laser incident angle is 220°) for ODMR test. Compared with previous experimental parameters (polarization time was 50 us, read the time of 3000 ns, laser incident angle was 250°), the experimental results show that the contrast of ODMR increases from 2.1% to 4.6%, and the typical magnetic sensitivity is improved from 21.6 nT/Hz1/2 to 5.6 nT/Hz1/2. The optimization of the optical control of NVs in solid diamond is realized. The above results provide an effective support for the detection of high-sensitivity manipulation sensing based on high-concentration NV ensemble.
Nitrogen Vacancy (NV) centers are point defects in diamond that allow magnetic field sensing based on Optically Detected Magnetic Resonance (ODMR). They are processed in ultrapure single-domain CVD grown diamond crystals and can be operated at room temperature. This results in solid-state sensors with a wide variety of applications. Ensemble of NV centers can be used to perform wide-field magnetic imaging with sensitivity in the nT range. Single NV centers can also be processed, which allows sensing at the atomic scale. This possibility, combined with its unique coherence properties, make NV center an ideal candidate for quantum sensing.
Nitrogen-vacancy (NV) color centers in diamond are excellent quantum sensors possessing high sensitivity and nano-scale spatial resolution. Their integration in photonic structures is often desired, since it leads to an increased photon emission and also allows the realization of solid-state quantum technology architectures. Here, we report the fabrication of diamond nano-pillars with diameters up to 1000 nm by electron beam lithography and inductively coupled plasma reactive ion etching in nitrogen-rich diamonds (type Ib) with [100] and [111] crystal orientations. The NV centers were created by keV-He ion bombardment and subsequent annealing, and we estimate an average number of NVs per pillar to be 4300 ± 300 and 520 ± 120 for the [100] and [111] samples, respectively. Lifetime measurements of the NVs’ excited state showed two time constants with average values of τ1 ≈ 2 ns and τ2 ≈ 8 ns, which are shorter as compared to a single color center in a bulk crystal (τ ≈ 10 ns). This is probably due to a coupling between the NVs as well as due to interaction with bombardment-induced defects and substitutional nitrogen (P1 centers). Optically detected magnetic resonance measurements revealed a contrast of about 5% and average coherence and relaxation times of T2 [100] = 420 ± 40 ns, T2 [111] = 560 ± 50 ns, and T1 [100] = 162 ± 11 μs, T1 [111] = 174 ± 24 μs. These pillars could find an application for scanning probe magnetic field imaging.
Magnetometry by using NV center, a localized coherent spin consisting of a pair of nitrogen atom and atomic void, in diamond is now regarded as a promising technique due to its potential for high sensitivity and miniaturization. The primary application for NV magnetometry was realized by optically detected magnetic resonance (ODMR). There have been plenty of reports on demonstration of magnetic sensing by using ODMR1. Towards simpler and more reliable implementation of NV magnetometry, photocurrent-detected magnetic resonance2 (PDMR) is one of the key technologies to bypass the bulky confocal optics that are necessary for ODMR-based photoluminescence detection. In a PDMR scheme, meanwhile, we use photocurrent to read out the NV spin state, which necessitates laser irradiation only for photoexcitation and spin initialization. The key for high sensitivity of PDMR-based magnetometry3 is low noise to spin-dependent signal ratio. For this sake, it is essential to mitigate the unwanted spin-independent photocurrent while maximizing the PDMR signal. In this study, we employed two different laser power and time4 in the pulse sequence to improve the signal to noise ratio5. As a result, the magnetic sensitivity as high as 13 nT/Hz0.5 was achieved.
Ensembles of nitrogen-vacancy (NV) centers in diamond are versatile quantum sensors with broad applications in the physical and life sciences. The concentration of neutral substitutional nitrogen ( [ N s 0 ]) strongly influences NV electronic spin coherence times, sensitivity, and optimal sensing strategies. Diamonds with [ N s 0 ] ∼ 1–10 ppm are a focus of recent material engineering efforts, with higher concentrations being favorable for continuous-wave optically detected magnetic resonance (CW-ODMR) and lower concentrations expected to benefit pulsed magnetometry techniques through extended NV spin coherence times and improved sensing duty cycles. In this work, we synthesize and characterize low- [ N s 0 ] ( ∼ 0.8 ppm), NV-enriched diamond material, engineered through low-strain chemical vapor deposition (CVD) growth on high-quality substrates, 12 C isotopic purification, and controlled electron irradiation and annealing. Our results demonstrate good strain homogeneity in diamonds grown on CVD substrates and spin-bath-limited NV dephasing times. By measuring NV spin and charge properties across a wide range of optical NV excitation intensity, we provide direct comparisons of photon-shot-noise-limited magnetic field sensitivity between the current low- [ N s 0 ] and previously studied higher- [ N s 0 ] ( ∼ 14 ppm) NV-diamond sensors. We show that low- [ N s 0 ] diamond can outperform higher- [ N s 0 ] diamond at moderate and low optical NV excitation intensity. Our results provide practical benchmarks and guidance for selecting NV-diamond sensors tailored to specific experimental constraints and sensing requirements.
Because of their high sensitivity, quantum materials are extremely promising for new technologies. The main challenge lies in maintaining a sufficiently quantum coherence times for quantum computation or quantum sensing systems. NV centers in diamond which are point defects consisting of a substitutional nitrogen atom neighboring an atomic vacancy, where an electron pair can reside in a triplet state – are ideal candidates for the development of industrial-scale quantum systems. These spin states exhibit ms-long coherence times at room temperature and can be manipulated optically, hence opening interesting perspectives for sending magnetic fields with high sensitivity1.At HiQuTe Diamond, we take up the challenge of mastering the entire nitrogen-doped diamond production chain synthesized by Microwave Plasma-Assisted Chemical Vapor Deposition (MPACVD). We aim at creating affordable diamonds specially engineered to achieve long coherence times with high NV density and high doping uniformity. This quest require to overcome the impact of several external factors that contribute to electron spin decoherence. First, the chemical composition of the diamond, specifically the types and concentrations of impurities within the diamond matrix (such as substitutional nitrogen NS, NV centres, mono-vacancies and clusters, hydrogen, etc.), as well as their electrical charge states (NS⁰, NS⁺, NV⁰, NV⁻) should be carefully controlled. Thanks to extensive scientific research conducted over the past decade, combined with our own R&D efforts, we are now able to quantify these parameters using experimental techniques compatible with industrial applications (Raman and UV-Vis spectroscopy) and compare our results with key performance indicators2. Second, we study the relationship between coherence (T2*) and strain inhomogeneities in our diamond layers, which we analyse using birefringence measurements. Our findings demonstrate our capability to produce CVD diamond layers with reduced strain and extended defect and confirm that strain could be a critical limiting factor for T2*.In this poster, I will review the efforts carried out at HiQuTe Diamond to develop specific material that is well suited for quantum sensing applications.References1.Barry, J. F., Schloss, J. M., Bauch, E., Turner, M. J., Hart, C. A., Pham, L. M., & Walsworth, R. L. (2020). Sensitivity optimization for NV-diamond magnetometry. Reviews of Modern Physics, 92(1), 015004.2.Langer, J. (2022). Quantum-grade diamond for cavity-based solutions. Fraunhofer Verlag.
Nitrogen-vacancy (NV) centers in single-crystal CVD diamond are promising candidates for quantum sensing due to their remarkable optical and spin properties [1]. These defects exhibit stable photoluminescence (PL), long spin coherence times, and high sensitivity to external fields [2]. In this study, we present a room-temperature PL characterization of NV centers excited with a 532 nm laser. The setup was optimized for high signal-to-noise ratio and spectral resolution. Key parameters analyzed include emission intensity, zero-phonon line (ZPL) at ~637 nm, phonon sidebands, and the charge state distribution between NV⁰ and NV⁻. The NV⁻ state, crucial for spin-based sensing, is evaluated to understand its stability under different nitrogen doping conditions [3]. The relative intensities of NV⁰ and NV⁻ provide insights into nitrogen incorporation and vacancy formation. These results contribute to optimizing synthesis conditions for enhanced NV⁻ concentration, supporting the advancement of diamond-based quantum sensing technologies.